型号
- 型号
- 关键词
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
厂商名称：Hewlett Packard Co
下载文档| 型号 | ATF-13136-STR | ATF-13136-TR1 | ATF-13136-TR2 |
|---|---|---|---|
| 描述 | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET |
| 包装说明 | DISK BUTTON, O-CRDB-F4 | DISK BUTTON, O-CRDB-F4 | DISK BUTTON, O-CRDB-F4 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 其他特性 | LOW NOISE | LOW NOISE | LOW NOISE |
| 配置 | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 5 V | 5 V | 5 V |
| 最大漏极电流 (ID) | 0.09 A | 0.09 A | 0.09 A |
| FET 技术 | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR |
| 最高频带 | KU BAND | KU BAND | KU BAND |
| JESD-30 代码 | O-CRDB-F4 | O-CRDB-F4 | O-CRDB-F4 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 4 | 4 | 4 |
| 工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| 最高工作温度 | 175 °C | 175 °C | 175 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | ROUND | ROUND | ROUND |
| 封装形式 | DISK BUTTON | DISK BUTTON | DISK BUTTON |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 功耗环境最大值 | 0.225 W | 0.225 W | 0.225 W |
| 最小功率增益 (Gp) | 8.5 dB | 8.5 dB | 8.5 dB |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES |
| 端子形式 | FLAT | FLAT | FLAT |
| 端子位置 | RADIAL | RADIAL | RADIAL |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
| Base Number Matches | 1 | 1 | 1 |
