ATF-50189
Enhancement Mode
[1]
Pseudomorphic HEMT
in SOT 89 Package
Data Sheet
Description
Avago Technologies’s ATF-50189 is a high linearity, medi-
um power, low noise E-pHEMT FET packaged in a low cost
surface mount SOT89
[3]
package. The combination of low
noise figure and high output IP3 at the same bias point
makes it ideal for receiver and transmitter application. Its
operating frequency range is from 400 MHz to 3.9 GHz.
The ATF-50189 is ideally suited for Cellular/PCS and WCD-
MA wireless infrastructure, WLAN, WLL and MMDS appli-
cation, and general purpose discrete E-pHEMT amplifiers
which require high linearity and power. All devices are
100% RF and DC tested.
Notes:
1. Enhancement mode technology employs a single positive Vgs,
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data
3. Conform to JEDEC reference outline MO229 for DRP-N
4. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power
Features
•
High Linearity and P1dB
•
Low Noise Figure
•
Excellent uniformity in product specifications
•
SOT 89 standard package
•
Point MTTF > 300 years
[2]
•
MSL-2 and lead-free
•
Tape-and-Reel packaging option available
Specifications
2 GH, 4.5V, 280 mA (Typ.)
•
45 dBm Output IP3
•
29 dBm Output Power at 1dB gain compression
•
1.1 dB Noise Figure
•
15.5 dB Gain
•
62% PAE at P1dB
•
LFOM
[4]
14 dB
Pin Connections and Package Marking
Applications
•
Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier
for Cellular/PCS and WCDMA wireless infrastructure
•
Driver Amplifier for WLAN, WLL/RLL and MMDS
applications
0GX
#1
#2
RFin
GND
Top View
#3
RFout
#3
#2
RFout
GND
#1
RFin
•
General purpose discrete E-pHEMT for other high
linearity applications
Attention: Observe precautions for
handling electrostatic sensitive devices.
Bottom View
Notes:
Package marking provides orientation and identification:
“0G” = Device Code
“x” = Month code indicates the month of manufacture.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1C)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
ATF-50189 Absolute Maximum Ratings
[1]
Symbol
V
DS
V
GS
V
GD
I
DS
I
GS
P
diss
P
in
T
CH
T
STG
Parameter
Drain–Source Voltage
[2]
Gate–Source Voltage
[2]
Gate Drain Voltage
[2]
Drain Current
[2]
Gate Current
Total Power Dissipation
[3]
RF Input Power
Channel Temperature
Storage Temperature
Units
V
V
V
A
mA
W
dBm
°C
°C
Absolute
Maximum
7
-5 to 0.8
-5 to 1
1
12
2.25
30
150
-65 to 150
Thermal Resistance
[2,4]
θ
ch_b
= 29°C/W
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperature T
B
is 25°C.
Derate 35 mW/°C for T
B
> 85°C.
4. Channel-to-board thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
ATF-50189 Electrical Specifications
T
A
= 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 280 mA unless otherwise specified.
Symbol
Vgs
Vth
Idss
Gm
Parameter and Test Condition
Operational Gate Voltage
Threshold Voltage
Saturated Drain Current
Transconductance
Vds = 4.5V, Ids = 280 mA
Vds = 4.5V, Ids = 32 mA
Vds = 4.5V, Vgs = 0V
Vds = 4.5V, Gm =
ΔIds/ΔVgs;
ΔVgs
= Vgs1 – Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
Vds = 0V, Vgs = -4.5V
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
Offset BW = 5 MHz
Offset BW = 10 MHz
Units
V
V
μA
mmho
Min.
0.37
—
—
175
Typ.
0.53
0.38
4.1
2294
Max.
0.72
—
—
—
Igss
NF
G
OIP3
P1dB
PAE
ACLR
Gate Leakage Current
Noise Figure
[1]
Gain
[1]
Output 3
rd
Order Intercept Point
[1,2]
Output Power at 1dB Compression Point
[1]
Power Added Efficiency
[1]
at P1dB
Adjacent Channel Leakage
Power Ratio
[1,3]
μA
dB
dB
dB
dB
dBm
dBm
dBm
dBm
%
%
dBc
dBc
—
—
—
14
—
43
—
27
—
45
—
—
—
13.8
1.1
1.0
15.5
21.5
45
44
29
28.5
62
49
60.0
67.8
60
—
—
17
—
—
—
—
—
—
—
—
—
Notes:
1. Measurements at 2 GHz obtained using production test board described in Figure 1 while measurement at 900 MHz obtained from double stub tuners.
2. i ) 2 GHz OIP3 test condition: F1 = 2 GHz, F2 = 2.005 GHz and Pin = -5 dBm per tone.
ii ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 905 MHz and Pin = -5 dBm per tone.
3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
- Test Model 1
- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
- Freq = 2140 MHz
- Pin = -5 dBm
- Channel Integrate Bandwidth = 3.84 MHz
2
2
Input
Input
Matching
Circuit
Γ_mag=0.80
Γ_ang=-136.6°
(0.9 dB loss)
DUT
Output
Matching
Circuit
Γ_mag=0.62
Γ_ang=-163°
(0.9 dB loss)
Output
Figure 1. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB, PAE
and ACLR measurements. This circuit achieves a trade-off between optimal OIP3, P1dB and
VSWR. Circuit losses have been de-embedded from actual measurements.
Product Consistency Distribution Charts
[1,2]
150
180
Stdev=0.37
120
150
120
90
60
30
30
0
28
Stdev=0.20
FREQUENCY
90
FREQUENCY
–3 Std
+3 Std
–3 Std
+3 Std
60
0
43
44
45
OIP3 (dBm)
46
47
28.5
29
P1dB (dBm)
29.5
30
Figure 2. OIP3 @ 2 GHz, 4.5V/280 mA.
LSL = 43.0, Nominal = 45.4
300
Figure 3. P1dB @ 2 GHz, 4.5V/280 mA.
LSL = 27.0, Nominal = 29.0
150
Stdev=0.16
250
200
150
100
50
0
14
30
120
Stdev=1.94
FREQUENCY
FREQUENCY
–3 Std
+3 Std
90
–3 Std
+3 Std
60
14.5
15
15.5
GAIN (dB)
16
16.5
17
0
54
58
62
PAE (%)
66
70
Figure 4. Gain @ 2 GHz, 4.5V/200 mA.
LSL = 14.0, Nominal = 15.5, USL = 17.0
Figure 5. PAE at P1dB @ 2 GHz, 4.5V/200 mA.
LSL = 45.0, Nominal = 62.0
Notes:
1. Distribution data sample size is 500 samples taken from 5 different wafers. Future wafers allocated
to this product may have nominal values anywhere between the upper and lower limits.
2. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
3
3
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V,
280 mA quiesent bias.
Typical Gammas at Optimum OIP3
[1]
Freq
(GHz)
0.45
0.9
1.8
2
2.4
3.5
Gamma Source
Mag
Ang (deg)
0.47
0.81
0.82
0.85
0.82
0.77
121.7
-157.5
-110.4
-106.4
-88.8
-49.6
Optimum OIP3
Gamma Load
Mag
Ang (deg)
0.76
0.72
0.62
0.64
0.67
0.59
-175.1
-178.1
-135.1
-127.4
-113.6
-79.5
OIP3
(dBm)
41.0
44.2
46.5
46.2
45.6
44.0
Gain
(dB)
22.0
21.6
16.0
15.1
13.0
8.6
P1dB
(dBm)
27.5
28.3
28.7
29.0
28.9
26.9
PAE
(%)
39.0
49.2
61.3
63.0
55.0
35.0
Typical Gammas at Optimum P1dB
[1]
Freq
(GHz)
0.45
0.9
1.8
2
2.4
3.5
Gamma Source
Mag
Ang (deg)
0.52
0.79
0.83
0.82
0.78
0.78
151.2
-160.1
-112.5
-102.1
-91.2
-49.7
Optimum P1dB
Gamma Load
Mag
Ang (deg)
0.71
0.67
0.72
0.69
0.77
0.72
-177.5
-158.3
-131.2
-117.5
-105.3
-74.6
OIP3
(dBm)
39.8
42.8
44.2
44.8
44.44
43.7
Gain
(dB)
23.9
20.1
15.9
14.9
12.5
8.7
P1dB
(dBm)
28.5
30.4
30.3
30.2
30.2
27.3
PAE
(%)
44.8
56
60.3
58.6
54.1
32
Note:
1. Typical describes additional product performance information that is not covered by the product warranty.
Typical IV Curve
1000
900
800
700
Vgs=0.7V
Vgs=0.8V
Ids (mA)
600
500
400
300
200
100
0
Vgs=0.6V
Vgs=0.54V
Vgs=0.5V
Vgs=0.4V
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
Vds (V)
Figure 6. Typical IV curve.
4
4
ATF-50189 Typical Performance Curves
(at 25°C unless specified otherwise)
Tuned for Optimal OIP3 at Vd = 4.5V, Ids = 280 mA, Operating Frequency = 2 GHz.
48
46
44
30
32
P1dB (dBm)
OIP3 (dBm)
42
40
38
36
34
32
3.5V
4.5V
5.5V
28
26
3.5V
4.5V
5.5V
24
30
120 160 200 240 280 320 360 400 440
Ids (mA)
22
120 160 200 240 280 320 360 400 440
Idsq (mA)
Figure 7. OIP3 vs. Ids and Vds at 2 GHz.
Figure 8. P1dB vs. Idsq and Vds at 2 GHz.
15.4
15.2
15
70
65
60
GAIN (dB)
14.8
14.6
14.4
14.2
3.5V
4.5V
5.5V
PAE (%)
55
50
45
40
35
3.5V
4.5V
5.5V
14
120 160 200 240 280 320 360 400 440
Ids (mA)
30
120 160 200 240 280 320 360 400 440
Idsq (mA)
Figure 9. Gain vs. Ids and Vds at 2 GHz.
Figure 10. PAE vs. Idsq and Vds at 2 GHz.
5
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