AUTOMOTIVE GRADE
AUIRF3808S
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D
D
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
75V
5.9m
7.0m
106A
S
G
D
2
Pak
AUIRF3808S
Specifically designed for Automotive applications, this Stripe Planar design of
HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide variety of other
applications.
G
Gate
D
Drain
S
Source
Base part number
AUIRF3808S
Package Type
D
2
-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF3808S
AUIRF3808STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
106
75
550
200
1.3
± 20
430
82
See Fig. 12a, 12b, 15, 16
5.5
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
Max.
0.75
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-11-13
AUIRF3808S
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance (Time Related)
Min.
75
–––
–––
2.0
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.086
5.9
–––
–––
–––
–––
–––
–––
150
31
50
16
140
68
120
4.5
7.5
Max. Units
Conditions
–––
V V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
7.0 m V
GS
= 10V, I
D
= 82A
4.0
V V
DS
= V
GS
, I
D
= 250µA
–––
S V
DS
= 25V, I
D
= 82A
25
V
DS
= 75V, V
GS
= 0V
µA
250
V
DS
= 60V,V
GS
= 0V,T
J
=150°C
200
V
GS
= 20V
nA
-200
V
GS
= -20V
220
47
76
–––
–––
–––
–––
–––
–––
I
D
= 82A
nC
V
DS
= 60V
V
GS
= 10V
V
DD
= 38V
I
D
= 82A
ns
R
G
= 2.5
V
GS
= 10V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.5
pF
V
GS
= 0V,V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V,V
DS
= 60V, ƒ = 1.0MHz
V
GS
= 0V,V
DS
= 0V to 60V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 82A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= 82A
nC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
––– 5310 –––
––– 890 –––
––– 130 –––
––– 6010 –––
––– 570 –––
––– 1140 –––
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Notes:
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
93
340
106
550
1.3
140
510
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Starting T
J
= 25°C, L = 0.130mH, R
G
= 25, I
AS
= 82A. (See fig.12)
I
SD
82A,
di/dt
310A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs;
duty cycle
2%.
C
oss eff.
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994
R
is measured at T
J
of approximately 90°C
2
2015-11-13
AUIRF3808S
1000
TOP
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
I
D
, Drain-to-Source Current (A)
BOTTOM
I
D
, Drain-to-Source Current (A)
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
100
4.5V
4.5V
10
10
1
0.1
1
20µs PULSE WIDTH
WIDTH
20µs PULSE
T
J
= 25°C
°
C
T
J
= 25
10
100
1
0.1
1
20µs PULSE
PULSE WIDTH
20µs
WIDTH
T
J
= 175°C
°
C
T
J
= 175
10
100
V
DS
Drain-to-Source Voltage (V)
,
V
DS
Drain-to-Source Voltage (V)
,
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000.00
3.0
I
D
= 137A
ID, Drain-to-Source Current
)
2.5
R
DS(on)
, Drain-to-Source On Resistance
T J = 175°C
2.0
100.00
(Normalized)
1.5
T J = 25°C
1.0
10.00
1.0
3.0
5.0
7.0
VDS = 15V
20µs PULSE WIDTH
9.0
11.0
13.0
15.0
0.5
0.0
-60
-40
-20
0
20
40
60
80
100
V
GS
= 10V
120
140
160
180
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Tem
perature
(
°
C)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Normalized On-Resistance
vs. Temperature
3
2015-11-13
AUIRF3808S
100000
12
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd , C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
I
D
=
82A
10
V
DS
= 60V
V
DS
= 37V
V
DS
= 15V
C, Capacitance(pF)
10000
V
GS
, Gate-to-Source Voltage (V)
100
8
Ciss
6
1000
Coss
4
Crss
100
1
10
2
VDS , Drain-to-Source Voltage (V)
0
0
40
80
120
160
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
1000.00
10000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD, Reverse Drain Current (A)
100.00
T J = 175°C
10.00
T J = 25°C
1.00
VGS = 0V
0.10
0.0
0.5
1.0
1.5
2.0
VSD , Source-toDrain Voltage (V)
ID, Drain-to-Source Current (A)
1000
100
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1msec
10msec
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
2015-11-13
AUIRF3808S
120
100
ID, Drain Current (A)
80
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 10a.
Switching Time Test Circuit
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
1
(Z
thJC
)
D = 0.50
0.20
Thermal Response
0.1
0.10
P
DM
t
1
0.02
0.01
SINGLEPULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Dutyfactor D =
2. PeakT
t
1
/ t
2
J
= P
DM
x Z
thJC
0.05
0.01
0.00001
+T
C
1
10
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-11-13
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