AUTOMOTIVE GRADE
PD - 97597A
AUIRFR4105
HEXFET
®
Power MOSFET
Features
●
●
●
●
●
●
●
●
●
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed
up toTjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
V
(BR)DSS
R
DS(on)
max.
I
D (Silicon Limited)
55V
45mΩ
27A
20A
G
S
I
D (Package Limited)
g
D
S
G
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
D-Pak
AUIRFR4105
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Max.
27
19
20
100
68
0.45
± 20
65
16
6.8
5.0
-55 to + 175
300
g
Units
A
Ã
d
e
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
h
Parameter
Typ.
–––
–––
–––
Max.
2.2
50
110
Units
°C/W
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
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1
07/05/11
AUIRFR4105
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
55
–––
–––
2.0
6.5
–––
–––
–––
–––
–––
0.052
–––
–––
–––
–––
–––
–––
–––
–––
–––
45
4.0
–––
25
250
100
-100
Conditions
V V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 16A
V V
DS
= V
GS
, I
D
= 250μA
S V
DS
= 25V, I
D
= 16A
μA
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
nA V
GS
= 20V
V
GS
= -20V
f
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.0
49
31
40
4.5
7.5
700
240
100
34
6.8
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= 16A
V
DS
= 44V
V
GS
= 10V, See Fig. 6 & 13
V
DD
= 28V
I
D
= 16A
R
G
= 18Ω
R
D
= 1.8Ω, See Fig. 10
Between lead,
f
ns
f
G
D
nH
6mm (0.25in.)
from package
pF
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
S
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
57
130
27
g
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
T
J
= 25°C, I
F
= 16A
di/dt = 100A/μs
A
100
1.6
86
200
V
ns
nC
Ã
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width
≤
300μs; duty cycle
≤
2%.
Calculated continuous current based on maximum allowable
junction temperature; Package limitation current = 20A.
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 410μH
R
G
= 25Ω, I
AS
= 16A. (See Figure 12)
T
J
≤
175°C.
I
SD
≤
16A, di/dt
≤
420A/μs, V
DD
≤
V
(BR)DSS
,
R
θ
is measured at Tj approximately 90°C.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
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AUIRFR4105
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
D-PAK
MSL1
Class M2 (+/- 200V)
AEC-Q101-002
†††
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device
Model
RoHS Compliant
ESD
Class H1B (+/- 900V)
AEC-Q101-001
Class C5 (+/- 1125V)
AEC-Q101-005
Yes
†††
†††
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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3
AUIRFR4105
1000
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
10
4.5V
4.5V
1
1
0.1
0.1
20μs PULSE WIDTH
T
C
= 25°C
1
10
A
100
0.1
0.1
20μs PULSE WIDTH
T
C
= 175°C
1
10
100
A
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
100
2.4
I
D
= 26A
I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25°C
T
J
= 175°C
1.6
10
1.2
0.8
0.4
1
4
5
6
7
V
DS
= 25V
20μs PULSE WIDTH
8
9
10
A
0.0
-60 -40 -20
0
20
40
60
V
GS
= 10V
80 100 120 140 160 180
A
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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AUIRFR4105
1200
1000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
iss
C
oss
= C
ds
+ C
gd
20
I
D
= 16A
V
DS
= 44V
V
DS
= 28V
16
C, Capacitance (pF)
800
C
oss
600
12
8
400
C
rss
200
4
0
1
10
100
A
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
I
D
, Drain Current (A)
100
10μs
T
J
= 175°C
T
J
= 25°C
100μs
10
1ms
10
1
0.4
0.8
1.2
1.6
V
GS
= 0V
A
2.0
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
100
A
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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5
