Niobium Chip Capacitors
Low Profile;
H
max
= 2 mm; HighCap
New series
Construction
I
I
I
I
I
B75194
Polar niobium capacitors with solid electrolyte
Niobium manganese dioxide technology (Nb-MnO
2
)
Flame-retardant plastic case (UL 94 V-0)
Tinned terminals
Maximum height 2,0 mm
Features
I
I
I
I
I
I
I
High volumetric efficiency
Excellent solderability
Stable temperature and frequency characteristics
Low leakage current, low dissipation factor
Low self-inductance
High resistance to shock and vibration
Suitable for use without series resistor
(recommended operating voltage see “General Technical Information”, page 111, 4.4)
Applications
I
I
I
I
I
I
Telecommunications (e.g. mobile phones, private branch exchanges, PDA)
Data processing (e.g. laptops, main frames)
Measuring and control engineering
Medical engineering
Switch-mode power supplies with very high clock frequencies (300 kHz)
DC/DC converters
Soldering
Suitable for reflow soldering (IR and vapor phase) and wave soldering
Delivery mode
Taped and reeled in accordance with IEC 60286-3
96
10/02
Niobium Chip Capacitors
Low Profile;
H
max
= 2 mm; HighCap
Ordering code structure
B75194
Passive component
H2686
M40
*
B75194
Reel diameter
9 = 180 mm, 6 = 330 mm
Case size
40 = V
Niobium capacitor
Capacitance tolerance
M =
±
20 %
Rated capacitance
First two digits = significant figures
Third digit = exponent
Voltage (code number)
Series
194 = tinned terminals Sn100
H = HighCap
Specifications and characteristics in brief
For characteristic curves see “General Technical Information”, page 107 ff.
HighCap
Series
Technology
Terminals
Rated voltage
V
R
(up to 85 °C)
Rated capacitance
C
R
Capacitance tolerance
Operating temperature
Failure rate
C
R
·
V
R
>
330
µ
F · V
Service life
Leakage current
(V
R
, 5 min, 20 °C)
ESR
max
(20 °C, 100 kHz)
IEC climatic category
B75194H
Nb-MnO
2
Tinned
6,3 … 10 Vdc
68 … 220
µ
F
±
20%
– 55 … +105
°
C
At 40 °C;
≤
V
R
,
R
S
≥
3
Ω
/V (1 fit = 1 . 10
-9
failures/h)
≤
38 fit
> 500 000 h
40 nA/
µ
C
—
To IEC 60068-1
55/105/56 (– 55/+105
°
C; 56 days damp heat test)
97
10/02
Niobium Chip Capacitors
Low Profile;
H
max
= 2 mm; HighCap
Dimensional drawing
L
2
B75194
W
2
W
2
L
1
W
2
H
P
P
Marking
H
2
Positive pole marking
KTA0209-E
➀
➁
Encapsulation: molded epoxy resin
NiFe; tinned surface Sn100
Positive pole marking
Case size
Dimensions in mm (inches)
L
W
4,3
±
0,3
(,169
±
,012)
H
2,0 max
(,079 max)
L
2
typ.
7,1
(,280)
W
2
±
0,1
H
2
typ.
±(
,004)
2,4
(,094)
1,1
(,043)
p
±
0,3
±
(,012)
1,3
(,051)
V (40)
7,3
±
0,3
(,287
±
,012)
98
10/02
Niobium Chip Capacitors
Low Profile;
H
max
= 2 mm; HighCap
Marking
Case size V
Positive
pole (bar)
Manufacturer’s
logo
B75194
N
EPCOS
Internal code for
production equipment
(2 to 3 figures)
Date code
V
Rated voltage, (not
coded)
V
R
= 6,3 V
is abbreviated as 6.
Capacitance
(in coded form)
KTA0250-B-E
Capacitance coding
1st and 2nd digit
3rd digit
Capacitance in pF
Multiplier: 5 = 10
5
pF
6 = 10
6
pF
7 = 10
7
pF
Date coding
Year
M = 2000
N = 2001
P = 2002
R = 2003
S = 2004
T = 2005
Month
1 = January
2 = February
3 = March
4 = April
5 = May
6 = June
7 = July
8 = August
9 = September
O = October
N = November
D = December
In addition to the year and month of manufac-
ture, the stamp includes another two or three
figures which internally allow us an assign-
ment to production equipment.
99
10/02
Niobium Chip Capacitors
Low Profile;
H
max
= 2 mm; HighCap
Overview of available types
HighCap
Series
V
R
(Vdc) up to 85
°
C
C
R
(
µ
F)
68
100
150
220
Upon request
V
V
V
V
V
V
B75194H
6,3
10
B75194
Technical data and ordering codes for B75194H
V
R
C
R
up to 85°C
(up to 105°C)
Vdc
6,3
(4,0)
10
(6,3)
Case
size
tan
δ
max
(20°C,
120 Hz)
0,08
0,08
0,08
0,06
0,06
0,06
I
lk, max
Z
max2)
(20°C,V
R
, (20°C,
5 min)
100 kHz)
Ordering code
1)
µ
F
100
150
220
68
100
150
Upon request
V
V
V
V
V
V
µ
A
25
38
55
27
40
60
Ω
0,7
0,7
0,7
0,7
0,7
0,7
B75194H1107M40
*
B75194H1157M40
*
B75194H1227M40
*
B75194H2686M40
*
B75194H2107M40
*
B75194H2157M40
*
Capacitance tolerance: M =
±
20%
1)
*
Code number for required reel diameter: 9 = 180 mm, 6 = 330 mm
2) Low ESR values upon request
100
10/02
