首页 > 器件类别 > 半导体 > 分立半导体

BAV-99S-E6327

器件类别:半导体    分立半导体   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

下载文档
BAV-99S-E6327 在线购买

供应商:

器件:BAV-99S-E6327

价格:-

最低购买:-

库存:点击查看

点击购买

器件参数
参数名称
属性值
产品种类
Product Category
Diodes - General Purpose, Power, Switching
制造商
Manufacturer
Infineon(英飞凌)
RoHS
Details
产品
Product
Switching Diodes
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-363
Peak Reverse Voltage
80 V
Max Surge Current
0.75 A
If - Forward Current
200 mA
Configuration
Dual Series
Recovery Time
4 ns
Vf - Forward Voltage
1.25 V
Ir - Reverse Current
50 uA
最小工作温度
Minimum Operating Temperature
- 65 C
最大工作温度
Maximum Operating Temperature
+ 150 C
系列
Packaging
Reel
高度
Height
0.9 mm
长度
Length
2 mm
Pd-功率耗散
Pd - Power Dissipation
250 mW
工厂包装数量
Factory Pack Quantity
3000
端接类型
Termination Style
Solder
类型
Type
Switching Diode
宽度
Width
1.25 mm
单位重量
Unit Weight
0.000212 oz
文档预览
BAV99...
Silicon Switching Diode
For high-speed switching applications
Series pair configuration
BAV99S / U: For orientation in reel see
package information below
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BAV99
BAV99W
!
BAV99S
BAV99U
$
#
, "
"
, !
, 
,
, 
,


!
Type
BAV99
BAV99S
BAV99U
BAV99W
1
Pb-containing
Package
SOT23
SOT363
SC74
SOT323
Configuration
series
dual series
dual series
series
Marking
A7s
A7s
A7s
A7s
package may be available upon special request
1
2007-09-19
BAV99...
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t
= 1 µs
t
= 1 ms
t
= 1 s, single
t
= 1 s, double
Total power dissipation
BAV99,
T
S
28°C
BAV99S,
T
S
85°C
BAV99U,
T
S
113°C
BAV99W,
T
S
110°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BAV99
BAV99S
BAV99U
BAV99W
1
For
Symbol
V
R
V
RM
I
F
I
FSM
Value
80
85
200
4.5
1
0.5
0.75
Unit
V
mA
A
P
tot
330
250
250
250
T
j
T
stg
Symbol
R
thJS
360
260
150
160
150
-65 ... 150
mW
°C
Value
Unit
K/W
calculation of
R
thJA please refer to Application Note Thermal Resistance
2
2007-09-19
BAV99...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
85
-
-
V
Breakdown voltage
V
(BR)
I
(BR)
= 100 µA
Reverse current
V
R
= 70 V
V
R
= 25 V,
T
A
= 150 °C
V
R
= 70 V,
T
A
= 150 °C
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
1000
1200
1250
I
R
-
-
-
-
-
-
0.15
30
50
mV
µA
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
-
-
1.5 pF
Diode capacitance
C
T
V
R
= 0 V,
f
= 1 MHz
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA, measured at
I
R
= 1mA,
R
L
= 100
Test circuit for reverse recovery time
D.U.T.
t
rr
-
-
4
ns
Pulse generator:
t
p
= 100ns,
D
= 0.05,
t
r
= 0.6ns,
R
i
= 50Ω
Oscillograph
Ι
F
EHN00019
Oscillograph:
R
= 50,
t
r
= 0.35ns
C
1pF
3
2007-09-19
BAV99...
Reverse current
I
R
=
ƒ
(T
A
)
V
R
= Parameter
10
5
nA
Forward Voltage
V
F
=
ƒ
(T
A
)
I
F
= Parameter
1.0
BAV 99
EHB00078
V
F
10
4
V
Ι
F
= 100 mA
I
R
10 mA
10
3
0.5
70 V
25 V
1 mA
0.1 mA
10
2
10
1
0
25
50
75
100
°C
150
0
0
50
100
T
A
C
T
A
150
Forward current
I
F
=
ƒ
(V
F
)
T
A
= 25°C
BAV 99
EHB00076
Forward current
I
F
=
ƒ
(T
S
)
BAV99
250
mA
150
Ι
F
mA
200
175
100
I
F
150
125
100
typ
max
50
75
50
25
0
0
0.5
1.0
V
V
F
1.5
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
4
2007-09-19
BAV99...
Forward current
I
F
=
ƒ
(T
S
)
BAV99S
250
mA
Forward current
I
F
=
ƒ
(T
S
)
BAV99U
250
mA
200
175
200
175
I
F
150
125
100
75
50
25
0
0
I
F
90 105 120
°C
150
125
100
75
50
25
0
0
15
30
45
60
75
150
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
Forward current
I
F
=
ƒ
(T
S
)
BAV99W
250
mA
Permissible Puls Load
R
thJS
=
ƒ
(t
p
)
BAV99
10
3
200
10
2
150
125
100
75
R
thJS
175
I
F
10
1
10
0
50
25
0
0
10
-1 -7
10
-6
-5
-4
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
15
30
45
60
75
90 105 120
°C
150
10
10
10
10
-3
10
-2
s
10
0
T
S
T
P
5
2007-09-19
查看更多>
参数对比
与BAV-99S-E6327相近的元器件有:BAV-99W-E6327、BAV-99-E6327、BAV-99S-E6433、BAV99SH6327XT、BCR-191W-E6327、BAV-99S-H6827、BAV-99-B5003。描述及对比如下:
型号 BAV-99S-E6327 BAV-99W-E6327 BAV-99-E6327 BAV-99S-E6433 BAV99SH6327XT BCR-191W-E6327 BAV-99S-H6827 BAV-99-B5003
描述 Diodes - General Purpose, Power, Switching 80 V 200 mA Diodes - General Purpose, Power, Switching AF DIODE 85V 0.2A Diodes - General Purpose, Power, Switching Silicon Switching Diode 200mA Diodes - General Purpose, Power, Switching AF DIGITAL TRANSISTOR Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR Diodes - General Purpose, Power, Switching AF DIGITAL TRANSISTOR Diodes - General Purpose, Power, Switching Silicon Switch Diode 200mA
产品种类
Product Category
Diodes - General Purpose, Power, Switching Diodes - General Purpose, Power, Switching Diodes - General Purpose, Power, Switching Diodes - General Purpose, Power, Switching Diodes - General Purpose, Power, Switching Bipolar Transistors - Pre-Biased Diodes - General Purpose, Power, Switching Diodes - General Purpose, Power, Switching
制造商
Manufacturer
Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌)
RoHS Details Details Details Details Details Details Details Details
产品
Product
Switching Diodes Switching Diodes Switching Diodes Switching Diodes Switching Diodes - - Switching Diodes
安装风格
Mounting Style
SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT - SMD/SMT
封装 / 箱体
Package / Case
SOT-363 SOT-323-3 SOT-23-3 SOT-363-6 SOT-363-6 SOT-323-3 - SOT-23-3
Peak Reverse Voltage 80 V 85 V 85 V 85 V 85 V - - 85 V
Max Surge Current 0.75 A 4.5 A 4.5 A 4.5 A 4.5 A - - 4.5 A
If - Forward Current 200 mA 0.2 A 0.2 A 0.2 A 200 mA - - 0.2 A
Configuration Dual Series Dual Series Dual Series Double Dual Series Dual Series Single - Dual Series
Recovery Time 4 ns 4 ns 4 ns 4 ns 4 ns - - 4 ns
Vf - Forward Voltage 1.25 V 1.25 V 1.25 V 1.25 V 1250 mV - - 1.25 V
Ir - Reverse Current 50 uA 0.15 uA 0.15 uA 0.15 uA 50 uA - - 0.15 uA
最小工作温度
Minimum Operating Temperature
- 65 C - 65 C - 65 C - 65 C - 65 C - 65 C - - 65 C
最大工作温度
Maximum Operating Temperature
+ 150 C + 150 C + 150 C + 150 C + 150 C + 150 C - + 150 C
系列
Packaging
Reel Reel Cut Tape Cut Tape Reel Cut Tape Reel Cut Tape
高度
Height
0.9 mm 0.9 mm 1 mm 0.9 mm - 0.9 mm - 1 mm
长度
Length
2 mm 2 mm 2.9 mm 2 mm - 2 mm - 2.9 mm
工厂包装数量
Factory Pack Quantity
3000 3000 1 10000 - 3000 3000 30000
类型
Type
Switching Diode Switching Diode Switching Diode Switching Diode - - - Switching Diode
宽度
Width
1.25 mm 1.25 mm 1.3 mm 1.25 mm - 1.25 mm - 1.3 mm
单位重量
Unit Weight
0.000212 oz - 0.000282 oz 0.000265 oz 0.000265 oz 0.000176 oz - 0.000282 oz
热门器件
热门资源推荐
器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
需要登录后才可以下载。
登录取消