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BAV19 / BAV20 / BAV21
BAV19 / 20 / 21
DO-35
Color Band Denotes Cathode
Small Signal Diode
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
BAV19
BAV20
BAV21
Value
120
200
250
200
1.0
4.0
-65 to +200
175
Units
V
V
V
mA
A
A
°C
°C
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
T
A
= 25°C unless otherwise noted
Parameter
Value
500
300
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
Parameter
Breakdown Voltage
BAV19
BAV20
BAV21
Test Conditions
I
R
= 100
µA
I
R
= 100
µA
I
R
= 100
µA
I
F
= 100 mA
I
F
= 200 mA
V
R
= 100 V
V
R
= 100 V, T
A
= 150°C
V
R
= 150 V
V
R
= 150 V, T
A
= 150°C
V
R
= 200 V
V
R
= 200 V, T
A
= 150°C
V
R
= 0, f = 1.0 MHz
I
F
= I
R
= 30 mA, I
RR
= 3.0 mA,
R
L
= 100Ω
Min
120
200
250
Max
Units
V
V
V
V
V
nA
µA
nA
µA
nA
µA
pF
ns
V
F
I
R
Forward Voltage
Reverse Current
BAV19
BAV20
BAV21
C
T
t
rr
Total Capacitance
Reverse Recovery Time
1.0
1.25
100
100
100
100
100
100
5.0
50
2001
Fairchild Semiconductor Corporation
BAV19/20/21, Rev. C
BAV19 / BAV20 / BAV21
Small Signal Diode
(continued)
Typical Characteristics
325
50
Ta=25
°
C
°
Ta= 25
°
C
Reverse Current, I
R
[nA]
Reverse Voltage, V [V]
R
40
30
300
20
10
275
3
5
10
20
30
50
100
0
55
R everse C urrent, I
R
[uA]
R everse Voltage, V
R
[V]
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
100
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100uA
100
Figure 2. Reverse Current vs Reverse Voltage
IR - 55 to 205 V
Ta= 25
°
C
450
Ta= 25
°
C
90
80
70
60
50
40
30
20
Forward Voltage, V
R
[mV]
180
200
220
240
255
Reverse Current, I
R
[nA]
400
350
300
250
Reverse Voltage, V
R
[V]
1
2
3
5
10
20
30
50
100
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Forward Current, I
F
[uA]
Figure 3. Reverse Current vs Reverse Roltage
IR - 180 to 225 V
Figure 4. Forward Voltage vs Forward Current
VF - 1.0 to 100uA
Ta= 25
°
C
700
1.4
1.3
°
Ta= 25 C
Forward Voltage, V
F
[mV]
650
Forward Voltage, V
F
[mV]
1.2
1.1
1.0
0.9
0.8
0.7
600
550
500
450
0.1
0.2
0.3
0.5
1
2
3
5
10
10
20
30
50
100
200
300
500
800
Forward Current, I
F
[mA]
Forward Current, I
F
[mA]
Figure 5. Forward Voltage vs Forward Current
VF - 0.1 to 10mA
Figure 6. Forward Voltage vs Forward Current
VF - 10 to 800mA
BAV19/20/21, Rev. C
BAV19 / BAV20 / BAV21
Small Signal Diode
(continued)
Typical Characteristics
(continued)
900
800
1.3
Ta= 25
°
C
Ta= -40
°
°
C
Forward Voltage, V [mV]
F
Total Capacitance [pF]
1
3
10
1.2
700
600
500
400
Ta= 25
°
C
1.1
1.0
Ta= +80
°
C
300
200
100
0.001
0.9
0.003
0.01
0.03
0.1
0.3
0.8
0
2
4
6
8
10
12
14
F orw ard C urrent, I
F
[m A ]
Reverse Voltage [V]
Figure 7. Forward Voltage
vs Ambient Temperature
VF - 1.0 uA - 10 mA (-40 to +80 Deg C)
50
400
Figure 8. Total Capacitance
Reverse Recovery Time [nS]
300
Current [mA]
40
200
I
F
(A V
)
-A
VE
RA
30
GE
RE
CT
100
IF I E
DC
UR
RE
I
F
= I
R
= 30 mA
Rloop = 100 Ohms
20
1.0
1.5
2.0
2.5
3.0
0
0
50
100
NT
-m
A
150
Reverse Recovery Current, I
rr
[mA]
Ambient Temperature, T
A
[ C]
Figure 9. Reverse Recovery Time vs
Reverse Recovery Current
Figure 10. Average Rectified Current (I
F(AV)
)
versus Ambient Temperature (T
A
)
500
Power Dissipation, P [mW]
D
400
DO-35 Pkg
300
SOT-23 Pkg
200
100
0
0
50
100
150
200
Average Temperature, I
O
[ C]
Figure 11. Power Derating Curve
BAV19/20/21, Rev. C
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