BB402M
Build in Biasing Circuit MOS FET IC
VHF RF Amplifier
ADE-208-716B (Z)
3rd. Edition
Mar. 2001
Features
•
Build in Biasing Circuit; To reduce using parts cost & PC board space.
•
Low noise characteristics;
(NF = 1.7 dB typ. at f = 200 MHz)
•
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
•
Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
MPAK-4R
3
4
2
1
1. Source
2. Drain
3. Gate2
4. Gate1
Notes:
1.
2.
Marking is “BX –”.
BB402M is individual type number of HITACHI BBFET.
BB402M
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Tch
Tstg
Ratings
12
+10
–0
±10
25
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
12
+10
±10
—
—
0.4
0.4
9
15
2.2
0.8
—
22
—
Typ
—
—
—
—
—
0.7
0.7
13
20
3.0
1.1
0.017
26
1.7
Max
—
—
—
+100
±100
1.0
1.0
18
—
4.0
1.5
0.04
—
2.2
Unit
V
V
V
nA
nA
V
V
mA
mS
pF
pF
pF
dB
dB
Test Conditions
I
D
= 200µA, V
G1S
= V
G2S
= 0
I
G1
= +10µA, V
G2S
= V
DS
= 0
I
G2
=
±10µA,
V
G1S
= V
DS
= 0
V
G1S
= +9V, V
G2S
= V
DS
= 0
V
G2S
=
±9V,
V
G1S
= V
DS
= 0
V
DS
= 9V, V
G2S
= 6V, I
D
= 100µA
V
DS
= 9V, V
G1S
= 9V, I
D
= 100µA
V
DS
= 9V, V
G1
= 9V, V
G2S
= 6V
R
G
= 120kΩ
V
DS
= 9V, V
G1
= 9V, V
G2S
=6V
R
G
= 120kΩ, f = 1kHz
V
DS
= 9V, V
G1
= 9V
V
G2S
=6V, R
G
= 120kΩ
f = 1MHz
V
DS
= 9V, V
G1
= 9V, V
G2S
=6V
R
G
= 120kΩ, f = 200MHz
Drain to source breakdown voltage V
(BR)DSS
Gate1 to source breakdown voltage V
(BR)G1SS
Gate2 to source breakdown voltage V
(BR)G2SS
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
I
G1SS
I
G2SS
V
G1S(off)
V
G2S(off)
I
D(op)
|y
fs
|
c
iss
c
oss
c
rss
PG
NF
2
BB402M
Main Characteristics
Test Circuit for Operating Items (I
D(op)
, |yfs|, Ciss, Coss, Crss, NF, PG)
V
G1
R
G
Gate 1
V
G2
Gate 2
Source
A
I
D
Drain
200MHz Power Gain, Noise Figure Test Circuit
V
T
1000p
V
G2
1000p
V
T
1000p
47k
Input (50Ω)
L1
1000p
36p
1000p
47k
BBFET
L2
1000p
47k
Output (50Ω)
10p max
1000p
1SV70
R
G
120k
RFC
1SV70
1000p
V
D
= V
G1
Unit
Resistance (Ω)
Capacitance (F)
L1:
φ1mm
Enameled Copper Wire,Inside dia 10mm, 2Turns
L2:
φ1mm
Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC:
φ1mm
Enameled Copper Wire,Inside dia 5mm, 2Turns
3
BB402M
Maximum Channel Power
Dissipation Curve
Pch (mW)
200
I
D
(mA)
25
Typical Output Characteristics
V
G2S
= 6 V
V
G1
= V
DS
20
150
Channel Power Dissipation
15
100
Drain Current
10
50
5
R
G
0
50
100
150
Ta (°C)
200
0
Ambient Temperature
2
4
6
Drain to Source Voltage
56
k
68
Ω
82
k
Ω
k
Ω
k
Ω
1
k
Ω
0
12
k
Ω
0
15
k
Ω
180
k
Ω
220
0 k
Ω
= 27
00
8
V
DS
(V)
10
Drain Current vs.
Gate2 to Source Voltage
25
k
Ω
68 k
Ω
Drain Current vs. Gate1 Voltage
20
I
D
(mA)
V
DS
= 9 V
R
G
= 100 k
Ω
16
6V
5V
4V
3V
2V
8
I
D
(mA)
56
20
82 k
Ω
100 k
Ω
15
Drain Current
10
150 k
Ω
180 k
Ω
200 k
Ω
R
G
= 220 k
Ω
5
Drain Current
120 k
Ω
12
4
V
G2S
= 1 V
V
DS
= V
G1
= 9 V
0
1.2 2.4
3.8
Gate2 to Source Voltage
4.8
6.0
V
G2S
(V)
0
2
4
6
8
V
G1
(V)
10
Gate1 Voltage
4
BB402M
Drain Current vs. Gate1 Voltege
20
I
D
(mA)
I
D
(mA)
V
DS
= 9 V
R
G
= 120 k
Ω
6V
5V
4V
20
V
DS
= 9 V
R
G
= 150 k
Ω
16
6V
5V
4V
3V
2V
V
G2S
= 1 V
Drain Current vs. Gate1 Voltege
16
12
12
Drain Current
8
2V
4
3V
Drain Current
8
V
G2S
= 1 V
4
0
2
4
6
8
Gate1 Voltage V
G1
(V)
10
0
2
4
6
8
Gate1 Voltage V
G1
(V)
10
Forward Transfer Admittance |y
fs
| (mS)
25
Forward Transfer Admittance |y
fs
| (mS)
Forward Transfer Admittance
vs. Gate1 Voltage
V
DS
= 9 V
R
G
= 100 k
Ω
20 f = 1 kHz
6V
5V
4V
3V
Forward Transfer Admittance
vs. Gate1 Voltage
25
V
DS
= 9 V
R
G
= 120 k
Ω
20 f = 1 kHz
15
6V
5V
4V
3V
15
10
2V
V
G2S
= 1 V
0
2
4
6
8
Gate1 Voltage V
G1
(V)
10
10
2V
5
5
V
G2S
= 1 V
0
2
4
6
8
Gate1 Voltage V
G1
(V)
10
5
