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BB659-E6327

Variable Capacitance Diode, 38.3pF C(T),

器件类别:分立半导体    二极管   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

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器件参数
参数名称
属性值
厂商名称
Infineon(英飞凌)
Reach Compliance Code
compliant
ECCN代码
EAR99
Is Samacsys
N
标称二极管电容
38.3 pF
二极管类型
VARIABLE CAPACITANCE DIODE
最大重复峰值反向电压
30 V
表面贴装
YES
Base Number Matches
1
文档预览
BB639/BB659...
Silicon Variable Capacitance Diodes
For tuning of extended frequency band
in VHF TV / VTR tuners
High capacitance ratio
Low series inductance
Low series resistance
Excellent uniformity and matching due to
"in-line" matching assembly procedure
Pb-free (RoHS compliant) package
BB639
BB659

Type
BB639
BB659
Package
SOD323
SCD80
Configuration
single
single
L
S
(nH)
1.8
0.6
Marking
yellow S
DE
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Peak reverse voltage
(
R
5kΩ )
Forward current
Operating temperature range
Storage temperature
I
F
T
op
T
stg
20
-55 ... 150
-55 ... 150
mA
°C
Symbol
V
R
V
RM
Value
30
35
Unit
V
1
2011-06-15
BB639/BB659...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Reverse current
V
R
= 30 V
V
R
= 30 V,
T
A
= 85 °C
AC Characteristics
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
V
R
= 2 V,
f
= 1 MHz
V
R
= 25 V,
f
= 1 MHz
V
R
= 28 V,
f
= 1 MHz
C
T
Symbol
min.
I
R
-
-
Values
typ.
max.
Unit
nA
-
-
10
200
pF
36
27.7
2.5
2.4
38.3
29.75
2.85
2.6
14.7
10.4
40
31.8
3.2
2.9
-
-
%
-
-
-
-
0.3
0.4
0.65
2.5
1
2
0.7
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V,
f
= 1 MHz
C
T1
/
C
T28
C
T2
/
C
T25
∆C
T
/
C
T
13.5
9.8
Capacitance ratio
V
R
= 2 V,
V
R
= 25 V,
f
= 1 MHz
Capacitance matching
1)
V
R
= 1 V,
V
R
= 28 V,
f
= 1 MHz,
7
diode sequenc
BB639
V
R
= 1 V,
V
R
= 28 V,
f
= 1 MHz,
4
diode sequenc
BB659
V
R
= 1 V,
V
R
= 28 V,
f
= 1 MHz,
7
diode sequenc
BB659
Series resistance
V
R
= 5 V,
f
= 470 MHz
1
For
r
S
-
details please refer to Application Note 047.
2
2011-06-15
BB639/BB659...
Diode capacitance
C
T
=
ƒ
(V
R
)
f
= 1MHz
40
pF
1/°C
Temperature coefficient of the diode
capacitance
T
Cc
=
ƒ
(
V
R
)
10
-3
30
C
T
25
TC
C
10
-4
10
-5 0
10
20
15
10
5
0
0
5
10
15
20
V
30
10
1
V
10
2
V
R
V
R
Reverse current
I
R
=
ƒ
(
T
A
)
V
R
= 28V
10
3
Reverse current
I
R
=
ƒ
(
V
R
)
T
A
= Parameter
10
3
pA
85°C
pA
10
2
10
2
I
R
I
R
25°C
10
1
10
1
10
0
10
0
-30
-10
10
30
50
70
°C
100
10
-1 0
10
10
1
V
10
2
T
A
V
R
3
2011-06-15
Package SCD80
BB639/BB659...
Package Outline
0.2
0.8
±0.1
10˚MAX.
M
A
+0.05
0.13
-0.03
A
±1.5˚
1.3
±0.1
2
1.7
±0.1
0.7
±0.1
Foot Print
1.45
0.35
Marking Layout (Example)
2005, June
Date code
0.35
BAR63-02W
Type code
Cathode marking
Laser marking
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch)
Reel ø330 mm = 10.000 Pieces/Reel
Standard
4
Reel with 2 mm Pitch
2
0.2
1.45
2.5
8
0.2
±0.05
Cathode
marking
1
0.3
±0.05
Cathode
marking
0.4
0.9
Cathode
marking
0.7
4
2011-06-15
BB639/BB659...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC75
1)
) CES-Code
Month 2 0 03
01
02
03
04
05
06
07
08
09
10
11
12
a
b
c
d
e
f
g
h
j
k
l
n
2 0 04
p
q
r
s
t
u
v
x
y
z
2
3
2005
A
B
C
D
E
F
G
H
J
K
L
N
2006
P
Q
R
S
T
U
V
X
Y
Z
4
5
2 0 07
a
b
c
d
e
f
g
h
j
k
l
n
2008
p
q
r
s
t
u
v
x
y
z
2
3
2009
A
B
C
D
E
F
G
H
J
K
L
N
2010
P
Q
R
S
T
U
V
X
Y
Z
4
5
2011
a
b
c
d
e
f
g
h
j
k
l
n
2012
p
q
r
s
t
u
v
x
y
z
2
3
2 0 13
A
B
C
D
E
F
G
H
J
K
L
N
2014
P
Q
R
S
T
U
V
X
Y
Z
4
5
1) New Marking Layout for SC75, implemented at October 2005.
.
5
2011-06-15
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