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BC182BRL1G

Bipolar Transistors - BJT 100mA 60V NPN

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

器件标准:

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
ON Semiconductor(安森美)
零件包装代码
TO-92
包装说明
CYLINDRICAL, O-PBCY-T3
针数
3
制造商包装代码
29-11
Reach Compliance Code
unknown
ECCN代码
EAR99
Factory Lead Time
1 week
其他特性
EUROPEAN PART NUMBER
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
50 V
配置
SINGLE
最小直流电流增益 (hFE)
180
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-T3
JESD-609代码
e1
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度(摄氏度)
260
极性/信道类型
NPN
最大功率耗散 (Abs)
0.35 W
认证状态
Not Qualified
表面贴装
NO
端子面层
Tin/Silver/Copper (Sn/Ag/Cu)
端子形式
THROUGH-HOLE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
40
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
200 MHz
文档预览
BC182, BC182B
Amplifier Transistors
NPN Silicon
Features
These are Pb−Free Devices*
http://onsemi.com
COLLECTOR
1
2
BASE
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
50
60
6.0
100
350
2.8
1.0
8.0
−55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
TO−92
CASE 29
STYLE 17
12
1
3
EMITTER
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
357
125
Unit
°C/W
°C/W
BC
182B
AYWW
G
G
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BC182G
BC182BG
BC182BRL1G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
Package
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
Shipping
5000 Units / Bulk
5000 Units / Bulk
2000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BC182/D
1
March, 2007 − Rev. 5
BC182, BC182B
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= 2.0 mA, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= 100
mA,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 50 V, V
BE
= 0)
Emitter−Base Leakage Current
(V
EB
= 4.0 V, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
mA,
V
CE
= 5.0 V)
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 100 mA, V
CE
= 5.0 V)
Collector −Emitter On Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA) (Note 1)
Base −Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA) (Note 1)
Base−Emitter On Voltage
(I
C
= 100
mA,
V
CE
= 5.0 V)
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 100 mA, V
CE
= 5.0 V) (Note 1)
DYNAMIC CHARACTERISTICS
Current −Gain — Bandwidth Product
(I
C
= 0.5 mA, V
CE
= 3.0 V, f = 100 MHz)
(I
C
= 10 mA, V
CE
= 5.0 V, f = 100 MHz)
Common Base Output Capacitance
(V
CB
= 10 V, I
C
= 0, f = 1.0 MHz)
Common Base Input Capacitance
(V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz)
Small−Signal Current Gain
(I
C
= 2.0 mA, V
CE
= 5.0 V, f = 1.0 kHz)
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 V, R
S
= 2.0 kW, f = 1.0 kHz)
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
BC182
BC182B
NF
2.0
10
f
T
150
C
ob
C
ib
h
fe
125
240
500
500
dB
100
200
8.0
5.0
pF
pF
MHz
h
FE
BC182
BC182
BC182B
BC182
V
CE(sat)
V
BE(sat)
V
BE(on)
0.55
0.5
0.62
0.83
0.7
0.07
0.2
0.25
0.6
1.2
V
V
40
120
180
80
500
500
V
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
50
60
6.0
0.2
15
15
V
V
V
nA
nA
Symbol
Min
Typ
Max
Unit
http://onsemi.com
2
BC182, BC182B
2.0
hFE, NORMALIZED DC CURRENT GAIN
1.5
1.0
0.8
0.6
0.4
0.3
0.2
0.2
V
CE
= 10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.5
1.0
2.0
5.0
10
20
50
I
C
, COLLECTOR CURRENT (mAdc)
100
200
0
0.1
V
CE(sat)
@ I
C
/I
B
= 10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mAdc)
50 70 100
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 10 V
Figure 1. Normalized DC Current Gain
BANDWIDTH PRODUCT (MHz)
Figure 1. “Saturation” and “On” Voltages
400
300
C, CAPACITANCE (pF)
200
10
7.0
5.0
C
ib
T
A
= 25°C
100
80
60
40
30
20
0.5 0.7
1.0
V
CE
= 10 V
T
A
= 25°C
3.0
C
ob
2.0
f T, CURRENT−GAIN
2.0 3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
30
50
1.0
0.4
0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
V
R
, REVERSE VOLTAGE (VOLTS)
20
40
Figure 2. Current−Gain — Bandwidth Product
Figure 3. Capacitances
r b, BASE SPREADING RESISTANCE (OHMS)
170
160
150
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25°C
140
130
120
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mAdc)
5.0
10
Figure 4. Base Spreading Resistance
http://onsemi.com
3
BC182, BC182B
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
R
P
L
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
B
STRAIGHT LEAD
BULK PACK
K
X X
G
H
V
1
D
J
C
SECTION X−X
N
N
R
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
K
X X
G
D
J
V
C
SECTION X−X
N
1
DIM
A
B
C
D
G
J
K
N
P
R
V
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
4
BC182/D
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参数对比
与BC182BRL1G相近的元器件有:BC182B、BC182A。描述及对比如下:
型号 BC182BRL1G BC182B BC182A
描述 Bipolar Transistors - BJT 100mA 60V NPN Bipolar Transistors - BJT 100mA 60V NPN Bipolar Transistors - BJT 100mA 60V NPN
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor
是否无铅 不含铅 含铅 含铅
是否Rohs认证 符合 不符合 不符合
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 TO-92 TO-92 TO-92
包装说明 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
针数 3 3 3
制造商包装代码 29-11 29-11 29-11
Reach Compliance Code unknown not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.1 A - 0.1 A
集电极-发射极最大电压 50 V - 50 V
配置 SINGLE - SINGLE
最小直流电流增益 (hFE) 180 - 120
JEDEC-95代码 TO-92 - TO-92
JESD-30 代码 O-PBCY-T3 - O-PBCY-T3
JESD-609代码 e1 - e0
元件数量 1 - 1
端子数量 3 - 3
最高工作温度 150 °C - 150 °C
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY
封装形状 ROUND - ROUND
封装形式 CYLINDRICAL - CYLINDRICAL
峰值回流温度(摄氏度) 260 - 240
极性/信道类型 NPN - NPN
最大功率耗散 (Abs) 0.35 W - 0.35 W
认证状态 Not Qualified - Not Qualified
表面贴装 NO - NO
端子面层 Tin/Silver/Copper (Sn/Ag/Cu) - Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE - THROUGH-HOLE
端子位置 BOTTOM - BOTTOM
处于峰值回流温度下的最长时间 40 - 30
晶体管应用 AMPLIFIER - AMPLIFIER
晶体管元件材料 SILICON - SILICON
标称过渡频率 (fT) 200 MHz - 200 MHz
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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