ON Semiconductort
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CES
V
EBO
I
C
P
D
P
D
T
J
, T
stg
BC237
45
50
6.0
BC238
25
30
5.0
100
350
2.8
1.0
8.0
–55 to +150
BC239
25
30
5.0
Unit
Vdc
Vdc
Vdc
mAdc
BC237,A,B,C
BC238B,C
BC239C
1
mW
mW/°C
Watts
mW/°C
°C
2
3
CASE 29–11, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
357
125
Unit
°C/W
°C/W
2
BASE
3
EMITTER
COLLECTOR
1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 2.0 mA, I
B
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 100
mA,
I
C
= 0)
Collector Cutoff Current
(V
CE
= 30 V, V
BE
= 0)
BC237
BC238
BC239
BC237
BC238
BC239
BC238
BC239
BC237
BC238
BC239
BC237
V
(BR)CEO
45
25
25
6.0
5.0
5.0
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
—
—
—
—
—
—
15
15
15
4.0
4.0
4.0
µA
V
V
(BR)EBO
V
I
CES
nA
(V
CE
= 50 V, V
BE
= 0)
(V
CE
= 30 V, V
BE
= 0) T
A
= 125°C
(V
CE
= 50 V, V
BE
= 0) T
A
= 125°C
©
Semiconductor Components Industries, LLC, 2001
196
May, 2001 – Rev. 3
Publication Order Number:
BC237/D
BC237,A,B,C BC238B,C BC239C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
µA,
V
CE
= 5.0 V)
h
FE
BC237A
BC237B/238B
BC237C/238C/239C
BC237
BC237A
BC237B/238B
BC237C/238C/239C
BC237A
BC237B/238B
BC237C/238C/239C
V
CE(sat)
BC237/BC238/BC239
BC237/BC239
BC238
V
BE(sat)
—
—
V
BE(on)
—
0.55
—
0.5
0.62
0.83
—
0.7
—
0.6
—
0.83
1.05
V
—
—
0.07
0.2
0.2
0.6
0.8
V
—
—
—
120
120
200
380
—
—
—
90
150
270
—
170
290
500
120
180
300
—
—
—
800
220
460
800
—
—
—
V
—
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 100 mA, V
CE
= 5.0 V)
Collector–Emitter On Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA)
Base–Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA)
Base–Emitter On Voltage
(I
C
= 100
µA,
V
CE
= 5.0 V)
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 100 mA, V
CE
= 5.0 V)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 0.5 mA, V
CE
= 3.0 V, f = 100 MHz)
f
T
BC237
BC238
BC239
BC237
BC238
BC239
C
obo
C
ibo
NF
BC239
—
(I
C
= 0.2 mA, V
CE
= 5.0 V, R
S
= 2.0 kΩ,
f = 1.0 kHz,
∆f
= 200 Hz)
BC237
BC238
BC239
—
—
—
2.0
2.0
2.0
2.0
4.0
10
10
4.0
—
—
—
150
150
150
—
—
100
120
140
200
240
280
—
8.0
—
—
—
—
—
—
4.5
—
pF
pF
dB
MHz
(I
C
= 10 mA, V
CE
= 5.0 V, f = 100 MHz)
Collector–Base Capacitance
(V
CB
= 10 V, I
C
= 0, f = 1.0 MHz)
Emitter–Base Capacitance
(V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz)
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 V, R
S
= 2.0 kΩ,
f = 1.0 kHz)
Figure 7.
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197
BC237,A,B,C BC238B,C BC239C
2.0
hFE, NORMALIZED DC CURRENT GAIN
1.5
1.0
0.8
0.6
0.4
0.3
0.2
0.2
V
CE
= 10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.5
1.0
2.0
5.0
10
20
50
I
C
, COLLECTOR CURRENT (mAdc)
100
200
0
0.1
V
CE(sat)
@ I
C
/I
B
= 10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mAdc)
50 70 100
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 10 V
Figure 1. Normalized DC Current Gain
BANDWIDTH PRODUCT (MHz)
Figure 2. “Saturation” and “On” Voltages
400
300
C, CAPACITANCE (pF)
200
10
7.0
5.0
C
ib
T
A
= 25°C
100
80
60
40
30
20
0.5 0.7
1.0
V
CE
= 10 V
T
A
= 25°C
3.0
2.0
C
ob
f T, CURRENT-GAIN
2.0 3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
30
50
1.0
0.4
0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
V
R
, REVERSE VOLTAGE (VOLTS)
20
40
Figure 3. Current–Gain — Bandwidth Product
Figure 4. Capacitances
r b, BASE SPREADING RESISTANCE (OHMS)
170
160
150
140
130
120
0.1
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25°C
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mAdc)
5.0
10
Figure 5. Base Spreading Resistance
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198
stm32/stm8
