BC327
& BC337
General Purpose Transistors
General Description and Suggested Applications:
•
PNP/NPN Silicon Planar Epitaxial Transistors.
•
Complementary Transistors for use in Driver and Output Stages of Audio Amplifiers
BC327 PNP
BC337 NPN
Dimensions
A
B
C
D
E
F
G
H
K
L
1.14
1.14
12.70
1.982
Minimum
4.32
4.45
3.18
0.41
0.35
5°
1.40
1.53
-
2.082
Dimensions : Millimetres
TO-92 Plastic Package
Maximum
5.33
5.20
4.19
0.55
0.50
Pin Configuration
1. Emitter
2. Base
3. Collector
Page 1
31/05/05 V1.0
BC327
& BC337
General Purpose Transistors
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Continuous
Peak
Emitter Current Peak
Base Current Continuous
Base Current Peak
Power Dissipation at Ta = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Resistance
From Junction to Ambient in Free Air
Rth
(j-a)
200
°C/W
Symbol
V
CEO
V
CES
V
EBO
I
C
I
CM
I
EM
I
B
I
BM
P
TA
T
j
, T
stg
BC327
NPN
BC337
PNP
45
50
5.0
800
1.0
1.0
100
200
625
5.0
-65 to +150
mA
A
V
Unit
mA
mW
mW/°C
°C
Electrical Characteristics (Ta = 25°C Unless Otherwise Specified)
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Cut off Current
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter on Voltage
Dynamic Characteristics
Transistors Frequency
f
T
C
ob
I
C
= 10mA, V
CE
= 5V, f = 35MHz
V
CB
= 10V, f = 1MHz
NPN
PNP
NPN
PNP
Typ 200
Typ 100
Typ 5.0
Typ 8.0
MHz
Symbol
V
CEO
V
CES
V
EBO
I
CBO
I
EBO
h
FE*
V
CE(Sat)*
V
BE(on)*
V
CB
Test Condition
I
C
= 10mA, I
B
= 0
I
C
= 100µA. I
E
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 20V, I
E
= 0
= 20V, I
E
= 0, T
J
= 150°C
V
EB
= 5V, I
C
= 0
I
C
= 100mA, V
CE
= 1V
Group 16
Group 25
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, V
CE
= 1V
BC327
>45
>50
>5.0
<100
<5.0
<10
100-600
100-250
160-400
<0.70
V
<1.20
Unit
V
V
V
nA
µA
µA
-
Output Capacitance
pF
* Pulse Test : Pulse Width = 300µs, Duty Cycle = 2%
Page 2
31/05/05 V1.0
BC327
& BC337
General Purpose Transistors
Specifications
V
CEO
maximum
(V)
V
CES
maximum
(V)
I
C
(A)
0.8
45
50
0.5
1
0.8
h
FE
minimum
at I
C
= 100mA
160-400
100-600
100-250
160-400
F
T
minimum
(Typical*)
F = 35MHz
100
60
-
210
625
TO-92
P
tot
(mW)
Package
Part Number
BC327.25
BC337
BC337.16
BC337.25
Page 3
31/05/05 V1.0
BC327
& BC337
General Purpose Transistors
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Disclaimer
This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes
in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied.
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This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2004.
Page 4
31/05/05 V1.0
