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NPN − BC368; PNP − BC369

Amplifier Transistors

Voltage and Current are Negative for

PNP Transistors

Features

http://onsemi.com

•

These are Pb−Free Devices*

MAXIMUM RATINGS

Rating

Collector − Emitter Voltage

Emitter − Base Voltage

Collector Current − Continuous

Total Device Dissipation @ T

= 25°C

Derate above 25°C

Total Device Dissipation @ T

= 25°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

Symbol

CEO

CES

EBO

, T

stg

Value

5.0

1.0

625

5.0

1.5

−55 to +150

Unit

Vdc

Adc

mW/°C

°C

TO−92

CASE 29

STYLE 14

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

MARKING DIAGRAMS

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

Symbol

qJA

qJC

Max

200

83.3

Unit

°C/W

BC36

AYWW

369

AYWW

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

COLLECTOR

BASE

NPN

EMITTER

BASE

COLLECTOR

PNP

EMITTER

ORDERING INFORMATION

Device

BC368G

BC368ZL1G

BC369ZL1G

Package

TO−92

(Pb−Free)

TO−92

(Pb−Free)

TO−92

(Pb−Free)

Shipping

5000 Units / Bulk

2000 / Ammo Pack

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2007

March, 2007 − Rev. 6

Publication Order Number:

BC368/D

NPN − BC368; PNP − BC369

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

= 10 mA, I

= 0)

Collector −Base Breakdown Voltage

= 100

mA,

= 0 )

Emitter −Base Breakdown Voltage

= 100

mA,

= 0)

Collector Cutoff Current

= 25 V, I

= 0)

= 25 V, I

= 0, T

= 150°C)

Emitter Cutoff Current

= 5.0 V, I

= 0)

ON CHARACTERISTICS

DC Current Gain

= 10 V, I

= 5.0 mA)

= 1.0 V, I

= 0.5 A)

= 1.0 V, I

= 1.0 A)

Bandwidth Product

= 10 mA, V

= 5.0 V, f = 20 MHz)

Collector−Emitter Saturation Voltage

= 1.0 A, I

= 100 mA)

Base−Emitter On Voltage

= 1.0 A, V

= 1.0 V)

BC368, 369

CE(sat)

BE(on)

−

375

−

0.5

1.0

MHz

−

(BR)CEO

(BR)CBO

(BR)EBO

CBO

−

EBO

−

1.0

5.0

−

Vdc

Symbol

Min

Typ

Max

Unit

mAdc

http://onsemi.com

NPN − BC368; PNP − BC369

200

VCE , COLLECTOR VOLTAGE (VOLTS)

1.0

= 25°C

0.8

0.6

0.4

0.2

= 10 mA

hFE, CURRENT GAIN

100

= 1.0 V

= 25°C

50 mA

100 mA

1000 mA

500 mA

250 mA

50 100

200

100

, COLLECTOR CURRENT (mA)

500

1000

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10

, BASE CURRENT (mA)

Figure 1. DC Current Gain

Figure 2. Collector Saturation Region

= 25°C

0.8

V, VOLTAGE (VOLTS)

BE(sat)

@ I

= 10

VB , TEMPERATURE COEFFICIENT (mV/

1.0

−0.8

−1.2

−1.6

−2.0

−2.4

−2.8

1.0 2.0

for V

BE(on)

@ V

= 1.0 V

0.6

0.4

0.2

1.0 2.0

CE(sat)

@ I

= 10

5.0 10 20

50 100 200 500 1000

, COLLECTOR CURRENT (mA)

5.0 10 20

50 100 200 500 1000

, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages

BANDWIDTH PRODUCT (MHz)

Figure 4. Temperature Coefficient

300

200

C, CAPACITANCE (pF)

160

= 25°C

120

100

= 10 V

= 25°C

f = 20 MHz

100

200

500

1000

ibo

obo

ibo

5.0

1.0

2.0

3.0

4.0

5.0

f T, CURRENT−GAIN

, COLLECTOR CURRENT (mA)

, REVERSE VOLTAGE (VOLTS)

Figure 5. Current−Gain — Bandwidth Product

Figure 6. Capacitance

http://onsemi.com

NPN − BC368; PNP − BC369

PACKAGE DIMENSIONS

TO−92 (TO−226)

CASE 29−11

ISSUE AM

SEATING

PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

DIM

INCHES

MIN

MAX

0.175

0.205

0.170

0.210

0.125

0.165

0.016

0.021

0.045

0.055

0.095

0.105

0.015

0.020

0.500

−−−

0.250

−−−

0.080

0.105

−−−

0.100

0.115

−−−

0.135

−−−

MILLIMETERS

MIN

MAX

4.45

5.20

4.32

5.33

3.18

4.19

0.407

0.533

1.15

1.39

2.42

2.66

0.39

0.50

12.70

−−−

6.35

−−−

2.04

2.66

−−−

2.54

2.93

−−−

3.43

−−−

STRAIGHT LEAD

BULK PACK

X X

SECTION X−X

BENT LEAD

TAPE & REEL

AMMO PACK

SEATING

PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND

DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P

AND BEYOND DIMENSION K MINIMUM.

MILLIMETERS

MIN

MAX

4.45

5.20

4.32

5.33

3.18

4.19

0.40

0.54

2.40

2.80

0.39

0.50

12.70

−−−

2.04

2.66

1.50

4.00

2.93

−−−

3.43

−−−

STYLE 14:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

X X

SECTION X−X

DIM

ON Semiconductor

and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone:

303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax:

303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email:

orderlit@onsemi.com

N. American Technical Support:

800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

ON Semiconductor Website: www.onsemi.com

Order Literature:

http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative

http://onsemi.com

BC368/D

参数对比

与BC369ZL1相近的元器件有：BC369、BC368ZL1、BC368、BC368ZL1G、BC369G、BC368G。描述及对比如下：

型号	BC369ZL1	BC369	BC368ZL1	BC368	BC368ZL1G	BC369G	BC368G
描述	Bipolar Transistors - BJT 1A 25V PNP	Bipolar Transistors - BJT 1A 25V PNP	Bipolar Transistors - BJT 1A 25V NPN	Bipolar Transistors - BJT 1A 25V NPN	Bipolar Transistors - BJT 1A 25V NPN	Bipolar Transistors - BJT 1A 25V PNP	Bipolar Transistors - BJT 1A 25V NPN
厂商名称	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)
零件包装代码	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
包装说明	CASE 29-11, TO-226, 3 PIN	TO-226, 3 PIN	CASE 29-11, TO-226, 3 PIN	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CASE 29-11, TO-226, 3 PIN	CYLINDRICAL, O-PBCY-T3
针数	3	3	3	3	3	3	3
制造商包装代码	CASE 29-11	29-11	CASE 29-11	29-11	29-11	CASE 29-11	29-11
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
是否Rohs认证	不符合	-	不符合	不符合	符合	符合	符合
最大集电极电流 (IC)	1 A	1 A	1 A	-	-	1 A	-
集电极-发射极最大电压	20 V	20 V	20 V	-	-	20 V	-
配置	SINGLE	SINGLE	SINGLE	-	-	SINGLE	-
最小直流电流增益 (hFE)	85	85	85	-	-	85	-
JEDEC-95代码	TO-92	TO-92	TO-92	-	-	TO-92	-
JESD-30 代码	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	-	-	O-PBCY-T3	-
JESD-609代码	e0	e0	e0	-	-	e1	-
元件数量	1	1	1	-	-	1	-
端子数量	3	3	3	-	-	3	-
最高工作温度	150 °C	150 °C	150 °C	-	-	150 °C	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	-
封装形状	ROUND	ROUND	ROUND	-	-	ROUND	-
封装形式	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	-	-	CYLINDRICAL	-
峰值回流温度（摄氏度）	240	240	240	-	-	260	-
极性/信道类型	PNP	PNP	NPN	-	-	PNP	-
最大功率耗散 (Abs)	0.8 W	0.8 W	0.8 W	-	-	1.5 W	-
认证状态	Not Qualified	Not Qualified	Not Qualified	-	-	Not Qualified	-
表面贴装	NO	NO	NO	-	-	NO	-
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	-	Tin/Silver/Copper (Sn/Ag/Cu)	-
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	-	THROUGH-HOLE	-
端子位置	BOTTOM	BOTTOM	BOTTOM	-	-	BOTTOM	-
处于峰值回流温度下的最长时间	30	30	30	-	-	40	-
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	-	-	AMPLIFIER	-
晶体管元件材料	SILICON	SILICON	SILICON	-	-	SILICON	-
标称过渡频率 (fT)	65 MHz	65 MHz	65 MHz	-	-	65 MHz	-
Brand Name	-	ON Semiconductor	-	ON Semiconductor	ON Semiconductor	-	ON Semiconductor
是否无铅	-	含铅	-	含铅	不含铅	-	不含铅
Factory Lead Time	-	1 week	-	1 week	1 week	1 week	-