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BC394CSM-JQR-A

Small Signal Bipolar Transistor, 0.1A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, LCC1-3

器件类别:分立半导体    晶体管   

厂商名称:SEMELAB

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
SEMELAB
包装说明
HERMETIC SEALED, CERAMIC, LCC1-3
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
HIGH RELIABILITY
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
180 V
配置
SINGLE
最小直流电流增益 (hFE)
30
JESD-30 代码
R-CDSO-N3
元件数量
1
端子数量
3
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子形式
NO LEAD
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
95 MHz
Base Number Matches
1
文档预览
BC394CSM
MECHANICAL DATA
Dimensions in mm (inches)
HIGH VOLTAGE NPN
AMPLIFIER TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
0.51 ± 0.10
(0.02 ± 0.004)
0.31 rad.
(0.012)
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
A
2.54 ± 0.13
(0.10 ± 0.005)
3
2
1
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
A=
0.31 rad.
(0.012)
0.76 ± 0.15
(0.03 ± 0.006)
• HIGH VOLTAGE AMPLIFIER
1.40
(0.055)
max.
1.02 ± 0.10
(0.04 ± 0.004)
APPLICATIONS:
SOT23 CERAMIC
(LCC1 PACKAGE)
Underside View
PAD 1 – Base
PAD 2 – Emitter
PAD 3 – Collector
Hermetically sealed surface mount version
of the popular BC394 for high reliability /
space applications requiring small size
and low weight devices.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
R
ja
T
stg
Semelab plc.
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
B
= 0)
Collector Current
Total Device Dissipation
Derate above 50°C
Thermal Resistance Junction to Ambient
Storage Temperature
180V
180V
6V
100mA
350mW
2.0mW / °C
440°C/W
–55 to 200°C
Prelim. 9/96
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
BC394CSM
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
Parameter
V
(BR)CBO
V
(BR)CEO*
V
(BR)EBO
I
CBO
V
CE(sat)*
V
BE(sat)*
h
FE*
f
T
C
CBO
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Capacitor- Base Capacitance
Test Conditions
I
C
= 100µA
I
B
= 0
I
C
= 0
T
A
= 150°C
I
B
= 1mA
I
B
= 5mA
I
B
= 1mA
I
B
= 5mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
I
E
= 0
I
E
= 100µA
V
CBO
= 100V
I
E
= 0
I
C
= 10mA
I
C
= 50mA
I
C
= 10mA
I
C
= 50mA
I
C
= 1mA
I
C
= 10mA
I
C
= 10mA
V
CB
= 10V
f = 1.0MHz
Min.
180
180
6
Typ.
Max. Unit
V
V
V
50
50
nA
µA
mV
mV
MHz
pF
Collector - Emitter Breakdown Voltage I
C
= 10mA
200
400
750
850
85
30
50
100
95
5
300
900
* Pulse Test: t
p
= 300µs,
δ ≤
1%.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/96
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