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BC547B_L34Z

transistor npn 45v 100ma TO-92

器件类别:分立半导体    晶体管   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Fairchild
零件包装代码
TO-92
包装说明
CYLINDRICAL, O-PBCY-T3
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
45 V
配置
SINGLE
最小直流电流增益 (hFE)
200
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-T3
JESD-609代码
e3
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
NO
端子面层
Matte Tin (Sn)
端子形式
THROUGH-HOLE
端子位置
BOTTOM
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
300 MHz
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BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor
November 2014
BC546 / BC547 / BC548 / BC549 / BC550
NPN Epitaxial Silicon Transistor
Features
Switching and Amplifier
High-Voltage: BC546, V
CEO
= 65 V
Low-Noise: BC549, BC550
Complement to BC556, BC557, BC558, BC559, and BC560
1
TO-92
1. Collector 2. Base 3. Emitter
Ordering Information
Part Number
BC546ABU
BC546ATA
BC546BTA
BC546BTF
BC546CTA
BC547ATA
BC547B
BC547BBU
BC547BTA
BC547BTF
BC547CBU
BC547CTA
BC547CTFR
BC548BU
BC548BTA
BC548CTA
BC549BTA
BC549BTF
BC549CTA
BC550CBU
BC550CTA
Marking
BC546A
BC546A
BC546B
BC546B
BC546C
BC547A
BC547B
BC547B
BC547B
BC547B
BC547C
BC547C
BC547C
BC548
BC548B
BC548C
BC549B
BC549B
BC549C
BC550C
BC550C
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Bulk
Ammo
Ammo
Tape and Reel
Ammo
Ammo
Bulk
Bulk
Ammo
Tape and Reel
Bulk
Ammo
Tape and Reel
Bulk
Ammo
Ammo
Ammo
Tape and Reel
Ammo
Bulk
Ammo
© 2002 Fairchild Semiconductor Corporation
BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1
www.fairchildsemi.com
1
BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
Collector-Base Voltage
Parameter
BC546
BC547 / BC550
BC548 / BC549
BC546
Value
80
50
30
65
45
30
6
5
100
500
150
-65 to +150
Unit
V
V
CEO
Collector-Emitter Voltage
BC547 / BC550
BC548 / BC549
BC546 / BC547
BC548 / BC549 / BC550
V
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V
mA
mW
°C
°C
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
C
ib
Parameter
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Conditions
V
CB
= 30 V, I
E
= 0
V
CE
= 5 V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 10 mA
V
CE
= 5 V, I
C
= 10 mA,
f = 100 MHz
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
EB
= 0.5 V, I
C
= 0, f = 1 MHz
Min.
110
Typ.
Max.
15
800
Unit
nA
90
250
700
900
580
660
250
600
mV
mV
700
720
mV
MHz
300
3.5
9
2.0
1.2
1.4
1.4
10.0
4.0
4.0
3.0
6.0
pF
pF
NF
Noise
Figure
BC546 / BC547 / BC548 V
CE
= 5 V, I
C
= 200
μA,
f = 1 kHz, R
G
= 2 kΩ
BC549 / BC550
BC549
BC550
V
CE
= 5 V, I
C
= 200
μA,
R
G
= 2 kΩ, f = 30 to 15000 MHz
dB
h
FE
Classification
Classification
h
FE
A
110 ~ 220
B
200 ~ 450
C
420 ~ 800
© 2002 Fairchild Semiconductor Corporation
BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1
www.fairchildsemi.com
2
BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
100
100
80
I
B
= 350
μ
A
I
B
= 300
μ
A
I
B
= 250
μ
A
I
B
= 200
μ
A
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
I
B
= 400
μ
A
V
CE
= 5V
10
60
40
I
B
= 150
μ
A
I
B
= 100
μ
A
1
20
I
B
= 50
μ
A
0
0
2
4
6
8
10
12
14
16
18
20
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 1. Static Characteristic
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
Figure 2. Transfer Characteristic
10000
V
CE
= 5V
1000
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
1000
V
BE
(sat)
100
100
10
V
CE
(sat)
1
1
10
100
1000
10
1
10
100
1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. DC Current Gain
Figure 4. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
100
1000
f
T
, CURRENT GAIN-BANDWIDTH PRODUCT
C
ob
[pF], CAPACITANCE
f=1MHz
I
E
= 0
10
V
CE
= 5V
100
1
10
0.1
1
10
100
1000
1
0.1
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Output Capacitance
Figure 6. Current Gain Bandwidth Product
© 2002 Fairchild Semiconductor Corporation
BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1
www.fairchildsemi.com
3
BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor
Physical Dimensions
D
Figure 7. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type
© 2002 Fairchild Semiconductor Corporation
BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1
www.fairchildsemi.com
4
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