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BC558TF

transistor pnp 30v 100ma TO-92

器件类别:分立半导体    晶体管   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Fairchild
零件包装代码
TO-92
包装说明
CYLINDRICAL, O-PBCY-T3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
30 V
配置
SINGLE
最小直流电流增益 (hFE)
110
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-T3
JESD-609代码
e3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度(摄氏度)
NOT APPLICABLE
极性/信道类型
PNP
最大功率耗散 (Abs)
0.5 W
认证状态
Not Qualified
表面贴装
NO
端子面层
Matte Tin (Sn)
端子形式
THROUGH-HOLE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT APPLICABLE
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
150 MHz
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BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
January 2016
BC556 / BC557 / BC558 / BC559 / BC560
PNP Epitaxial Silicon Transistor
Features
Switching and Amplifier
High-Voltage: BC556, V
CEO
= -65 V
Low-Noise: BC559, BC560
Complement to BC546, BC547, BC548, BC549, and BC550
12
3
1
2
TO-92
1. Collector
2. Base
3. Emitter
3
Straight Lead
Bulk Packing
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
BC556ABU
BC556ATA
BC556BTA
BC556BTF
BC556BTFR
BC557ATA
BC557BTA
BC557BTF
BC558BTA
BC559BTA
BC559CTA
BC560CTA
Marking
BC556A
BC556A
BC556B
BC556B
BC556B
BC557A
BC557B
BC557B
BC558B
BC559B
BC559C
BC560C
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Bulk
Ammo
Ammo
Tape and Reel
Tape and Reel
Ammo
Ammo
Tape and Reel
Ammo
Ammo
Ammo
Ammo
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
www.fairchildsemi.com
1
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
Collector-Base Voltage
Parameter
BC556
BC557 / BC560
BC558 / BC559
BC556
Value
-80
-50
-30
-65
-45
-30
-5
-100
-200
-200
150
-65 to +150
Unit
V
V
CEO
V
EBO
I
C
I
CP
I
BP
T
J
T
STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current (Pulse)
Peak Base Current (Pulse)
Junction Temperature
Storage Temperature Range
BC557 / BC560
BC558 / BC559
V
V
mA
mA
mA
°C
°C
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJA
Total Power Dissipation
Derate Above 25°C
Parameter
Max.
500
4.0
250
Unit
mW
mW/°C
°C/W
Thermal Resistance, Junction-to-Ambient
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
www.fairchildsemi.com
2
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Conditions
V
CB
= -30 V, I
E
= 0
V
CE
= -5 V, I
C
= -2 mA
I
C
= -10 mA, I
B
= -0.5 mA
I
C
= -100 mA, I
B
= -5 mA
I
C
= -10 mA, I
B
= -0.5 mA
I
C
= -100 mA, I
B
= -5 mA
V
CE
= -5 V, I
C
= -2 mA
V
CE
= -5 V, I
C
= -10 mA
V
CE
= -5 V, I
C
= -10 mA,
f = 10 MHz
V
CB
= -10 V, I
E
= 0, f = 1 MHz
Min.
110
Typ.
Max.
-15
800
Unit
nA
-90
-250
-700
-900
-600
-660
-300
-650
mV
mV
-750
-800
mV
MHz
150
6
2
1
1.2
1.2
10
4
4.0
2.0
pF
NF
Noise
Figure
BC556 / BC557 / BC558 V
CE
= -5 V, I
C
= -200
μA,
f = 1 kHz, R
G
= 2 kΩ
BC559 / BC560
BC559
BC560
V
CE
= -5 V, I
C
= -200
μA,
R
G
= 2 kΩ, f = 30 to 15000 MHz
dB
h
FE
Classification
Classification
h
FE
A
110 ~ 220
B
200 ~ 450
C
420 ~ 800
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
www.fairchildsemi.com
3
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
-50
-45
1000
I
C
[mA], COLLECTOR CURRENT
I
B
= -400
μ
A
I
B
= -350
μ
A
T
A
= 150 C
o
V
CE
= -5V
-40
-35
-30
-25
-20
-15
-10
-5
-0
-2
-4
-6
-8
-10
h
FE
, DC CURRENT GAIN
I
B
= -300
μ
A
I
B
= -250
μ
A
I
B
= -200
μ
A
I
B
= -150
μ
A
I
B
= -100
μ
A
I
B
= -50
μ
A
T
A
= 25 C
T
A
= -55 C
100
o
o
10
-12
-14
-16
-18
-20
-1
-10
-100
-1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC Current Gain
-10
-1000
V
CE
(sat) [V], COLLECTOR-EMITTER
I
C
= 20 I
B
I
C
= 20 I
B
I
C
[mA], COLLECTOR CURRENT
SATURATION VOLTAGE
-1
-100
T
A
= 150 C
-0.1
o
T
A
= 25 C
o
-10
T
A
= -55 C
o
T
A
= 150 C
-1
-0.0
-0.2
-0.4
o
T
A
= 25 C
-0.6
-0.8
o
T
A
= -55 C
-1.0
-1.2
o
-0.01
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
V
BE
(sat) [V], BASE-EMITTER SATURATION VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
-1000
I
C
[mA], COLLECTOR CURRENT
V
CE
= -5V
-100
-10
T
A
= 150 C
o
T
A
= 25 C
o
T
A
= -55 C
1
o
C
ob
(pF), CAPACITANCE
10
f=1MHz
I
E
= 0
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1
-10
-100
V
BE
(on) [V], BASE-EMITTER ON VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Collector Output Capacitance
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
www.fairchildsemi.com
4
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