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BC559BTA

PNP Epitaxial Silicon Transistor, 2000-FNFLD

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
包装说明
CYLINDRICAL, O-PBCY-T3
制造商包装代码
135AR
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
1 week
Samacsys Description
Transistor, Fairchild, BC559BTA Fairchild BC559BTA PNP Bipolar Transistor, -100 mA -30 V, 3-Pin TO-92
其他特性
LOW NOISE
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
30 V
配置
SINGLE
最小直流电流增益 (hFE)
200
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-T3
JESD-609代码
e3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
PNP
最大功率耗散 (Abs)
0.625 W
认证状态
Not Qualified
表面贴装
NO
端子面层
Tin (Sn)
端子形式
THROUGH-HOLE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
150 MHz
文档预览
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
January 2016
BC556 / BC557 / BC558 / BC559 / BC560
PNP Epitaxial Silicon Transistor
Features
Switching and Amplifier
High-Voltage: BC556, V
CEO
= -65 V
Low-Noise: BC559, BC560
Complement to BC546, BC547, BC548, BC549, and BC550
12
3
1
2
TO-92
1. Collector
2. Base
3. Emitter
3
Straight Lead
Bulk Packing
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
BC556ABU
BC556ATA
BC556BTA
BC556BTF
BC556BTFR
BC557ATA
BC557BTA
BC557BTF
BC558BTA
BC559BTA
BC559CTA
BC560CTA
Marking
BC556A
BC556A
BC556B
BC556B
BC556B
BC557A
BC557B
BC557B
BC558B
BC559B
BC559C
BC560C
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Bulk
Ammo
Ammo
Tape and Reel
Tape and Reel
Ammo
Ammo
Tape and Reel
Ammo
Ammo
Ammo
Ammo
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
www.fairchildsemi.com
1
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
Collector-Base Voltage
Parameter
BC556
BC557 / BC560
BC558 / BC559
BC556
Value
-80
-50
-30
-65
-45
-30
-5
-100
-200
-200
150
-65 to +150
Unit
V
V
CEO
V
EBO
I
C
I
CP
I
BP
T
J
T
STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current (Pulse)
Peak Base Current (Pulse)
Junction Temperature
Storage Temperature Range
BC557 / BC560
BC558 / BC559
V
V
mA
mA
mA
°C
°C
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJA
Total Power Dissipation
Derate Above 25°C
Parameter
Max.
500
4.0
250
Unit
mW
mW/°C
°C/W
Thermal Resistance, Junction-to-Ambient
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
www.fairchildsemi.com
2
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Conditions
V
CB
= -30 V, I
E
= 0
V
CE
= -5 V, I
C
= -2 mA
I
C
= -10 mA, I
B
= -0.5 mA
I
C
= -100 mA, I
B
= -5 mA
I
C
= -10 mA, I
B
= -0.5 mA
I
C
= -100 mA, I
B
= -5 mA
V
CE
= -5 V, I
C
= -2 mA
V
CE
= -5 V, I
C
= -10 mA
V
CE
= -5 V, I
C
= -10 mA,
f = 10 MHz
V
CB
= -10 V, I
E
= 0, f = 1 MHz
Min.
110
Typ.
Max.
-15
800
Unit
nA
-90
-250
-700
-900
-600
-660
-300
-650
mV
mV
-750
-800
mV
MHz
150
6
2
1
1.2
1.2
10
4
4.0
2.0
pF
NF
Noise
Figure
BC556 / BC557 / BC558 V
CE
= -5 V, I
C
= -200
μA,
f = 1 kHz, R
G
= 2 kΩ
BC559 / BC560
BC559
BC560
V
CE
= -5 V, I
C
= -200
μA,
R
G
= 2 kΩ, f = 30 to 15000 MHz
dB
h
FE
Classification
Classification
h
FE
A
110 ~ 220
B
200 ~ 450
C
420 ~ 800
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
www.fairchildsemi.com
3
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
-50
-45
1000
I
C
[mA], COLLECTOR CURRENT
I
B
= -400
μ
A
I
B
= -350
μ
A
T
A
= 150 C
o
V
CE
= -5V
-40
-35
-30
-25
-20
-15
-10
-5
-0
-2
-4
-6
-8
-10
h
FE
, DC CURRENT GAIN
I
B
= -300
μ
A
I
B
= -250
μ
A
I
B
= -200
μ
A
I
B
= -150
μ
A
I
B
= -100
μ
A
I
B
= -50
μ
A
T
A
= 25 C
T
A
= -55 C
100
o
o
10
-12
-14
-16
-18
-20
-1
-10
-100
-1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC Current Gain
-10
-1000
V
CE
(sat) [V], COLLECTOR-EMITTER
I
C
= 20 I
B
I
C
= 20 I
B
I
C
[mA], COLLECTOR CURRENT
SATURATION VOLTAGE
-1
-100
T
A
= 150 C
-0.1
o
T
A
= 25 C
o
-10
T
A
= -55 C
o
T
A
= 150 C
-1
-0.0
-0.2
-0.4
o
T
A
= 25 C
-0.6
-0.8
o
T
A
= -55 C
-1.0
-1.2
o
-0.01
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
V
BE
(sat) [V], BASE-EMITTER SATURATION VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
-1000
I
C
[mA], COLLECTOR CURRENT
V
CE
= -5V
-100
-10
T
A
= 150 C
o
T
A
= 25 C
o
T
A
= -55 C
1
o
C
ob
(pF), CAPACITANCE
10
f=1MHz
I
E
= 0
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1
-10
-100
V
BE
(on) [V], BASE-EMITTER ON VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Collector Output Capacitance
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
www.fairchildsemi.com
4
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