NPN Silicon AF Transistors
q
High current gain
q
High collector current
q
Low collector-emitter saturation voltage
q
Complementary types: BC 636, BC 638,
BC 635
… BC 639
BC 640 (PNP)
1
2
3
Type
BC 635
BC 637
BC 639
Marking
–
Ordering Code
Q68000-A3360
Q68000-A2285
Q68000-A3361
Pin Configuration
1
2
3
E
C
B
Package
1)
TO-92
If desired, selected transistors, type BC 63
5
–10 (h
FE
= 63 … 160), or BC 63
5
–16
(h
FE
= 100 … 250) are available. Ordering codes upon request.
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BC 635
… BC 639
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
1)
Junction - case
2)
R
th JA
R
th JC
≤
156
≤
75
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
T
j
T
stg
Values
BC 635
45
45
Unit
BC 637
60
60
5
1
1.5
100
200
0.8 (1)
150
– 65 … + 150
W
˚C
mA
A
BC 639
80
100
V
Total power dissipation,
T
C
= 90 ˚C
1)
P
tot
K/W
1)
2)
If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm
×
10 mm large copper area
for the collector terminal,
R
th JA
= 125 K/W and thus
P
tot max
= 1 W at
T
A
= 25 ˚C.
Mounted on Al heat sink 15 mm
×
25 mm
×
0.5 mm.
Semiconductor Group
2
BC 635
… BC 639
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA
BC 635
BC 637
BC 639
Collector-base breakdown voltage
I
C
= 100
µ
A
BC 635
BC 637
BC 639
Emitter-base breakdown voltage
I
E
= 10
µ
A
Collector cutoff current
V
CB
= 30 V
V
CB
= 30 V,
T
A
= 150 ˚C
Emitter cutoff current
V
EB
= 4 V
DC current gain
I
C
= 5 mA;
V
CE
= 2 V
I
C
= 150 mA;
V
CE
= 2 V
1)
I
C
= 500 mA;
V
CE
= 2 V
1)
Collector-emitter saturation voltage
1)
I
C
= 500 mA;
I
B
= 50 mA
Base-emitter voltage
1)
I
C
= 500 mA;
V
CE
= 2 V
AC characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V,
f
= 20 MHz
f
T
–
100
–
MHz
V
(BR)EB0
I
CB0
–
–
I
EB0
h
FE
25
40
25
V
CEsat
V
BE)
–
–
–
–
–
–
–
–
250
–
500
1
mV
V
–
–
–
–
100
20
100
nA
µ
A
nA
–
V
(BR)CE0
45
60
80
V
(BR)CB0
45
60
100
5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
Values
typ.
max.
Unit
1)
Pulse test:
t
≤
300
µ
s,
D
≤
2 %.
Semiconductor Group
3
BC 635
… BC 639
Total power dissipation
P
tot
=
f
(T
A
;
T
C
)
Collector cutoff current
I
CB0
=
f
(T
A
)
V
CB
= 30 V
Permissible pulse load
R
thJA
=
f
(t
p
)
V
CE
= 2 V
Collector current
I
C
=
f
(V
BE
)
Semiconductor Group
4
BC 635
… BC 639
DC current gain
h
FE
=
f
(I
C
)
V
CE
= 2 V
Collector-emitter saturation voltage
V
CEsat
=
f
(I
C
)
h
FE
= 10
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 10 V,
f
= 20 MHz
Semiconductor Group
5
电源技术
