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BC807-16LT1G

PNP Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL

器件类别:分立半导体    晶体管   

厂商名称:Harwin

厂商官网:http://www.harwin.com/

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
Harwin
零件包装代码
SOT-23
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
制造商包装代码
318-08
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
1 week
Samacsys Confidence
3
Samacsys Status
Released
Samacsys PartID
224456
Samacsys Pin Count
3
Samacsys Part Category
Transistor
Samacsys Package Category
SOT23 (3-Pin)
Samacsys Footprint Name
SOT-23 (TO-236) CASE 318-08
Samacsys Released Date
2015-07-24 08:55:11
Is Samacsys
N
最大集电极电流 (IC)
0.5 A
集电极-发射极最大电压
45 V
配置
SINGLE
最小直流电流增益 (hFE)
100
JEDEC-95代码
TO-236
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性/信道类型
PNP
最大功率耗散 (Abs)
0.225 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
40
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
100 MHz
Base Number Matches
1
文档预览
BC807-16L, BC807-25L,
BC807-40L
General Purpose
Transistors
PNP Silicon
Features
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−45
−50
−5.0
−500
Unit
V
V
V
mAdc
1
2
SOT−23
CASE 318
STYLE 6
3
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW
mW/°C
°C/W
°C
1
556
mW
mW/°C
°C/W
Max
Unit
MARKING DIAGRAM
5xx M
G
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
5xx = Device Code
xx = A1, B1, or C
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
©
Semiconductor Components Industries, LLC, 1997
1
October, 2016 − Rev. 14
Publication Order Number:
BC807−16LT1/D
BC807−16L, BC807−25L, BC807−40L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= −10 mA)
Collector −Emitter Breakdown Voltage
(V
EB
= 0, I
C
= −10
mA)
Emitter −Base Breakdown Voltage
(I
E
= −1.0
mA)
Collector Cutoff Current
(V
CB
= −20 V)
(V
CB
= −20 V, T
J
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= −100 mA, V
CE
= −1.0 V)
h
FE
BC807−16, SBC80−16L
BC807−25, SBC807−25L
BC807−40, SBC807−40L
V
CE(sat)
V
BE(on)
100
160
250
40
250
400
600
−0.7
−1.2
V
V
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
−100
−5.0
nA
mA
−45
−50
−5.0
V
V
V
Symbol
Min
Typ
Max
Unit
(I
C
= −500 mA, V
CE
= −1.0 V)
Collector −Emitter Saturation Voltage
(I
C
= −500 mA, I
B
= −50 mA)
Base −Emitter On Voltage
(I
C
= −500 mA, V
CE
= −1.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= −10 mA, V
CE
= −5.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= −10 V, f = 1.0 MHz)
f
T
C
obo
100
10
MHz
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
BC807−16LT1G
SBC807−16LT1G*
BC807−16LT3G
SBC807−16LT3G*
BC807−25LT1G
SBC807−25LT1G*
BC807−25LT3G
SBC807−25LT3G*
BC807−40LT1G
SBC807−40LT1G*
BC807−40LT3G
SBC807−40LT3G*
5C
10,000 / Tape & Reel
5C
3000 / Tape & Reel
5B1
5B1
SOT−23
(Pb−Free)
10,000 / Tape & Reel
3000 / Tape & Reel
5A1
10,000 / Tape & Reel
5A1
3000 / Tape & Reel
Specific Marking
Package
Shipping
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
www.onsemi.com
2
BC807−16L, BC807−25L, BC807−40L
TYPICAL CHARACTERISTICS − BC807−16LT1
500
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE
= 1 V
h
FE
, DC CURRENT GAIN
400
150°C
1
I
C
/I
B
= 10
150°C
25°C
0.1
−55°C
300
25°C
200
−55°C
100
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
0.01
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.1
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
150°C
I
C
/I
B
= 10
−55°C
25°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5 V
−55°C
25°C
150°C
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
www.onsemi.com
3
BC807−16L, BC807−25L, BC807−40L
TYPICAL CHARACTERISTICS − BC807−16LT1
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
-1.0
T
J
= 25°C
-0.8
I
C
=
-500 mA
-0.6
-0.4
I
C
= -300 mA
-0.2
I
C
= -10 mA
0
-0.01
-0.1
I
C
= -100 mA
-1.0
-10
I
B
, BASE CURRENT (mA)
-100
Figure 5. Saturation Region
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+1.0
q
VC
for V
CE(sat)
0
100
C, CAPACITANCE (pF)
C
ib
10
-1.0
-2.0
q
VB
for V
BE
C
ob
-1.0
-10
-100
I
C
, COLLECTOR CURRENT (mA)
-1000
1.0
-0.1
-1.0
-10
V
R
, REVERSE VOLTAGE (VOLTS)
-100
Figure 6. Temperature Coefficients
Figure 7. Capacitances
www.onsemi.com
4
BC807−16L, BC807−25L, BC807−40L
TYPICAL CHARACTERISTICS − BC807−25LT1
500
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
150°C
h
FE
, DC CURRENT GAIN
400
25°C
V
CE
= 1 V
1
I
C
/I
B
= 10
150°C
25°C
0.1
−55°C
300
200
−55°C
100
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
0.01
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
Figure 8. DC Current Gain vs. Collector
Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.1
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
150°C
I
C
/I
B
= 10
−55°C
25°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5 V
−55°C
25°C
150°C
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
1000
f
T
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
V
CE
= 1 V
T
A
= 25°C
Figure 11. Base Emitter Voltage vs. Collector
Current
100
10
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
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