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BC80725MTF

Bipolar Transistors - BJT SOT-23 PNP GP AMP

器件类别：分立半导体    晶体管   

厂商名称：ON Semiconductor(安森美)

厂商官网：http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
包装说明
SMALL OUTLINE, R-PDSO-G3
制造商包装代码
318BM
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
0.8 A
集电极-发射极最大电压
45 V
配置
SINGLE
最小直流电流增益 (hFE)
100
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
PNP
最大功率耗散 (Abs)
0.35 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
100 MHz
Base Number Matches
1
文档预览
Is Now Part of
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www.onsemi.com
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device numbers. The most current and up-to-date ordering information can be found at
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Please
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BC807 / BC808 — PNP Epitaxial Silicon Transistor
November 2014
BC807 / BC808
PNP Epitaxial Silicon Transistor
Features
3
• Switching and Amplifier Applications
• Suitable for AF-Driver Stages and Low Power Output Stages
• Complement to BC817 / BC818
1
2
SOT-23
1. Base 2. Emitter 3. Collector
Ordering Information
Part Number
BC80716MTF
BC80725MTF
BC80740MTF
BC80840MTF
Marking
9FA
9FB
9FC
9GC
Package
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
Packing Method
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CES
V
CEO
V
EBO
I
C
T
J
T
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Junction Temperature
Storage Temperature
Parameter
BC807
BC808
BC807
BC808
Value
-50
-30
-45
-25
-5
-800
150
-65 to +150
Unit
V
V
V
mA
°C
°C
© 2002 Fairchild Semiconductor Corporation
BC807 / BC808 Rev. 1.1.0
www.fairchildsemi.com
1
BC807 / BC808 — PNP Epitaxial Silicon Transistor
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJA
Power Dissipation
Derate Above 25°C
Parameter
Value
310
2.48
403
Unit
mW
mW/°C
°C/W
Thermal Resistance, Junction-to-Ambient
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CEO
BV
CES
BV
EBO
I
CES
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector-Emitter Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
BC807
BC808
BC807
BC808
Conditions
I
C
= -10 mA, I
B
= 0
I
C
= -0.1 mA, V
BE
= 0
I
E
= -0.1 mA, I
C
= 0
V
CE
= -25 V, V
BE
= 0
V
EB
= -4 V, I
C
= 0
V
CE
= -1 V, I
C
= -100 mA
V
CE
= -1 V, I
C
= -300 mA
I
C
= -500 mA, I
B
= -50 mA
V
CE
= -1 V, I
C
= -300 mA
V
CE
= -5 V, I
C
= -10 mA,
f = 50 MHz
V
CB
= -10 V, f = 1 MHz
Min.
-45
-25
-50
-30
-5
Typ.
Max.
Unit
V
V
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
-100
-100
100
60
-0.7
-1.2
100
12
630
nA
nA
V
V
MHz
pF
h
FE
Classification
Classification
h
FE1
h
FE2
16
100 ~ 250
60 ~
25
160 ~ 400
100 ~
40
250 ~ 630
170 ~
© 2002 Fairchild Semiconductor Corporation
BC807 / BC808 Rev. 1.1.0
www.fairchildsemi.com
2
BC807 / BC808 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
-500
-20
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
-400
-300
mA
- 5.0 A
I
B
= - 4.5m
I
B
= 4.0mA
-
A
I
B
= - 3.5m A
I
B
= - 3.0m A
I
B
= - 2.5m
mA
I
B
=
- 2.0
I
B
=
I
B
=
I
B
=
-16
- 80
μ
A
I
B
=
- 70
μ
A
μ
A
- 60
I
B
=
P
T
I
B
=
μ
A
- 50
I
B
=
=6
00
mW
-12
μ
A
- 40
30
μ
A
mA
- 1.5
P
T
= 60
0mW
-200
-8
I
B
= -
I
B
= - 1.0mA
I
B
= - 0.5mA
μ
A
I
B
= - 20
-4
-100
I
B
= - 10
μ
A
I
B
= 0
-0
-0
-1
-2
-3
-4
-5
-0
-0
-10
-20
-30
I
B
= 0
-40
-50
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
1000
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
PULSE
I
C
= 10 I
B
PULSE
V
CE
(sat)
V
CE
= - 2.0V
h
FE
, DC CURRENT GAIN
100
-1
- 1.0V
10
-0.1
V
BE
(sat)
1
-0.1
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. DC Current Gain
Figure 4. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
-1000
100
I
C
[mA], COLLECTOR CURRENT
V
CE
= -1V
PULSE
-100
f = 1.0MHz
C
ib
, C
ob
[pF], CAPACITANCE
C
ib
C
ob
10
-10
-1
-0.1
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
1
-0.1
-1
-10
-100
V
BE
[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
V
EB
[V], EMITTER-BASE VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Input Output Capacitance
© 2002 Fairchild Semiconductor Corporation
BC807 / BC808 Rev. 1.1.0
www.fairchildsemi.com
3
BC807 / BC808 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
(Continued)
1000
f
T
[MHz], GAIN BANDWIDTH PRODUCT
V
CE
= -5.0V
100
10
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
Figure 7. Current Gain Bandwidth Product
© 2002 Fairchild Semiconductor Corporation
BC807 / BC808 Rev. 1.1.0
www.fairchildsemi.com
4
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参数对比
与BC80725MTF相近的元器件有：BC80716MTF。描述及对比如下：
型号 BC80725MTF BC80716MTF
描述 Bipolar Transistors - BJT SOT-23 PNP GP AMP Bipolar Transistors - BJT SOT-23 PNP GP AMP
Brand Name ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
制造商包装代码 318BM 318BM
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
最大集电极电流 (IC) 0.8 A 0.8 A
集电极-发射极最大电压 45 V 45 V
配置 SINGLE SINGLE
最小直流电流增益 (hFE) 100 60
JESD-30 代码 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e3 e3
湿度敏感等级 1 1
元件数量 1 1
端子数量 3 3
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED
极性/信道类型 PNP PNP
最大功率耗散 (Abs) 0.35 W 0.35 W
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
端子面层 Tin (Sn) Tin (Sn)
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 100 MHz 100 MHz
Base Number Matches 1 1
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器件捷径:
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