BC846/BC546 series
65 V, 100 mA NPN general-purpose transistors
Rev. 07 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
BC846
BC846W
BC846T
BC546A
[2]
BC546B
[2]
[1]
[2]
Type number
[1]
JEITA
-
SC-70
SC-75
SC-43A
SC-43A
JEDEC
TO-236AB
-
-
TO-92
TO-92
PNP
complement
BC856
BC856W
BC856T
BC556A
BC556B
SOT23
SOT323
SOT416
SOT54
SOT54
Valid for all available selection groups.
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
General-purpose transistors
SMD plastic packages
Two different gain selections
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
h
FE
group A
h
FE
group B
V
CE
= 5 V;
I
C
= 2 mA
Conditions
open base
Min
-
-
110
110
200
Typ
-
-
-
180
290
Max
65
100
450
220
450
Unit
V
mA
NXP Semiconductors
BC846/BC546 series
65 V, 100 mA NPN general-purpose transistors
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
2
006aaa144
Simplified outline
Symbol
SOT23; SOT323; SOT416
3
1
2
sym021
3
SOT54
1
2
3
emitter
base
collector
1
2
3
001aab347
3
2
1
sym026
SOT54A
1
2
3
emitter
base
collector
1
2
3
001aab348
3
2
1
sym026
SOT54 variant
1
2
3
emitter
base
collector
1
2
3
001aab447
3
2
1
sym026
BC846_BC546_SER_7
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 07 — 17 November 2009
2 of 14
NXP Semiconductors
BC846/BC546 series
65 V, 100 mA NPN general-purpose transistors
3. Ordering information
Table 4.
Ordering information
Package
Name
BC846
BC846W
BC846T
BC546A
[2]
BC546B
[2]
[1]
[2]
Type number
[1]
Description
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic single-ended leaded (through hole) package;
3 leads
plastic single-ended leaded (through hole) package;
3 leads
Version
SOT23
SOT323
SOT416
SOT54
SOT54
-
SC-70
SC-75
SC-43A
SC-43A
Valid for all available selection groups.
Also available in SOT54 and SOT54 variant packages (see
Section 2
and
Section 9).
4. Marking
Table 5.
BC846
BC846A
BC846B
BC846W
BC846AW
BC846BW
[1]
Marking codes
Marking code
[1]
1D*
1A*
1B*
1D*
1A*
1B*
Type number
BC846T
BC846AT
BC846BT
BC546A
BC546B
-
Marking code
[1]
1M
1A
1B
C546A
C546B
-
Type number
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BC846_BC546_SER_7
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 07 — 17 November 2009
3 of 14
NXP Semiconductors
BC846/BC546 series
65 V, 100 mA NPN general-purpose transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
SOT23
SOT323
SOT416
SOT54
T
j
T
amb
T
stg
[1]
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
Min
-
-
-
-
-
-
Max
80
65
6
100
200
200
Unit
V
V
V
mA
mA
mA
-
-
-
-
-
−65
−65
250
200
150
500
150
+150
+150
mW
mW
mW
mW
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT23
SOT323
SOT416
SOT54
[1]
Conditions
in free air
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
500
625
833
250
K/W
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BC846_BC546_SER_7
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 07 — 17 November 2009
4 of 14
NXP Semiconductors
BC846/BC546 series
65 V, 100 mA NPN general-purpose transistors
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
I
CBO
Conditions
Min
-
-
-
Typ
-
-
-
Max
15
5
100
Unit
nA
μA
nA
collector-base cut-off V
CB
= 30 V; I
E
= 0 A
current
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
°C
emitter-base cut-off
current
DC current gain
h
FE
group A
h
FE
group B
DC current gain
h
FE
group A
h
FE
group B
V
CEsat
V
BEsat
V
BE
f
T
C
c
C
e
NF
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
transition frequency
V
CE
= 5 V; I
C
= 10
μA
V
CE
= 5 V; I
C
= 10
μA
V
CE
= 5 V; I
C
= 2 mA
V
CE
= 5 V; I
C
= 2 mA
V
CE
= 5 V; I
C
= 2 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
[1]
[2]
[2]
[3]
[3]
I
EBO
h
FE
V
EB
= 5 V; I
E
= 0 A
-
-
110
110
200
-
-
-
-
580
-
100
-
-
-
180
290
-
180
290
90
200
760
900
660
-
-
2
11
2
-
-
450
220
450
200
400
-
-
700
770
-
3
-
10
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
collector capacitance V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
emitter capacitance
noise figure
V
EB
= 0.5 V; I
C
= i
c
= 0 A;
f = 1 MHz
I
C
= 200
μA;
V
CE
= 5 V;
R
S
= 2 kΩ; f = 1 kHz;
B = 200 Hz
[1]
[2]
[3]
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
V
BEsat
decreases by approximately 1.7 mV/K with increasing temperature.
V
BE
decreases by approximately 2 mV/K with increasing temperature.
BC846_BC546_SER_7
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 07 — 17 November 2009
5 of 14
