首页 > 器件类别 > 分立半导体 > 晶体管

BC846-A

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:KEC

厂商官网:http://www.keccorp.com/

下载文档
器件参数
参数名称
属性值
厂商名称
KEC
包装说明
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknow
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
65 V
配置
SINGLE
最小直流电流增益 (hFE)
110
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
300 MHz
文档预览
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
BC846/7/8
EPITAXIAL PLANAR NPN TRANSISTOR
L
E
B
L
FEATURES
A
G
・For
Complementary With PNP Type BC856/857/858.
・Suffix
U
: Qualified to AEC-Q101
ex) BC846-A-RTK/PU
2
H
3
1
Q
P
P
C
N
M
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
BC846
Collector-Base Voltage
BC847
BC848
BC846
Collector-Emitter
Voltage
BC847
BC848
BC846
Emitter-Base Voltage
BC847
BC848
DC
Collector Current
PULSE
Base Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
I
C
I
CP
I
B
I
E
P
C
*
T
j
T
stg
V
EBO
V
CEO
V
CBO
SYMBOL
RATING
80
50
30
65
45
30
6
6
5
100
mA
200
20
-100
350
150
-55½150
mA
mA
mW
Type Name
1. EMITTER
UNIT
2. BASE
3. COLLECTOR
V
V
V
Marking
Lot No.
P
C
* : Package Mounted On 99.5% Alumina 10×8×0.6mm.
MARK SPEC
TYPE
MARK
BC846A
1A
BC846B
1B
BC847A
1E
BC847B
1F
BC847C
1G
BC848A
1J
BC848B
1K
BC848C
1L
2018. 04. 10
Revision No : 5
K
SOT-23
J
D
・High
Voltage : BC846 V
CEO
=65V.
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
1/3
BC846/7/8
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
BC846
DC Current Gain (Note)
BC847
BC848
Collector-Emitter Saturation Voltage
V
CE(sat)
1
V
CE(sat)
2
V
BE(sat)
1
V
BE(sat)
2
V
BE(ON1)
V
BE(ON2)
f
T
C
ob
NF
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
=2mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=0.1mA
R
g
=10kΩ, f=1kHz
h
FE
V
CE
=5V, I
C
=2mA
SYMBOL
I
CBO
TEST CONDITION
V
CB
=30V, I
E
=0
MIN.
-
110
110
110
-
-
-
-
0.58
-
-
-
-
TYP.
-
-
-
-
0.09
0.2
0.7
0.9
-
-
300
2.5
1.0
MAX.
15
450
800
800
0.25
V
0.6
-
V
-
0.7
0.75
-
4.5
10
V
V
MHz
pF
dB
UNIT
nA
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
NOTE : According to the value of hFE the BC846, BC847, BC848 are classified as follows.
CLASSIFICATION
BC846
h
FE
BC847
BC848
A
110½220
110½220
110½220
B
200½450
200½450
200½450
C
-
420½800
420½800
2018. 04. 10
Revision No : 5
2/3
BC846/7/8
I
COLLECTOR CURRENT I
C
(mA)
100
80
60
40
20
0
C
- V
CE
COLLECTOR CURRENT I
C
(mA)
100
50
30
10
5
3
1
0.5
0.3
0.1
0.2
0.4
V
CE
=5V
I
C
- V
BE
I
B
=400μA
I
B
=350μA
I
B
=300μA
I
B
=250μA
I
B
=200μA
I
B
=150μA
I
B
=100μA
I
B
=50μA
0
4
8
12
16
20
0.6
0.8
1.0
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
BASE-EMITTER VOLTAGE V
BE
(V)
h
FE
- I
C
1k
DC CURRENT GAIN h
FE
500
300
V
CE
=5V
V
BE(sat)
, V
CE(sat)
- I
10
SATURATION VOLTAGE
V
BE(sat)
, V
CE(sat)
(V)
3
1
0.3
0.1
0.03
0.01
V
CE(sat)
I
C
/I
B
=20
C
V
BE(sat)
100
50
30
10
1
3
10
30
100
300
1k
COLLECTOR CURRENT I
C
(mA)
1
3
10
30
100
300
1K
COLLECTOR CURRENT I
C
(mA)
C
ob
- V
CB
20
CAPACITANCE C
ob
(pF)
10
5
3
f=1MHz
I
E
=0
1
1
3
10
30
100
COLLECTOR-BASE VOLTAGE V
CB
(V)
2018. 04. 10
Revision No : 5
3/3
查看更多>
热门器件
热门资源推荐
器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
需要登录后才可以下载。
登录取消