BC847 series
45 V, 100 mA NPN general-purpose transistors
Rev. 8 — 20 August 2012
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
BC847
BC847A
BC847B
BC847C
BC847W
BC847AW
BC847BW
BC847CW
BC847T
BC847AT
BC847BT
BC847CT
BC847AM
BC847BM
BC847CM
[1]
Valid for all available selection groups.
Type number
[1]
PNP complement
JEITA
-
JEDEC
TO-236AB
BC857
BC857A
BC857B
BC857C
SOT23
SOT323
SC-70
-
BC857W
BC857AW
BC857BW
BC857CW
SOT416
SC-75
-
BC857T
BC857AT
BC857BT
BC857CT
SOT883
SC-101
-
BC857AM
BC857BM
BC857CM
1.2 Features and benefits
General-purpose transistors
SMD plastic packages
Three different gain selections
1.3 Applications
General-purpose switching and amplification
NXP Semiconductors
BC847 series
45 V, 100 mA NPN general-purpose transistors
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
h
FE
group A
h
FE
group B
h
FE
group C
V
CE
= 5 V; I
C
= 2 mA
Conditions
open base
Min
-
-
110
110
200
420
Typ
-
-
-
180
290
520
Max
45
100
800
220
450
800
Unit
V
mA
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
2
006aaa144
Simplified outline
Graphic symbol
SOT23, SOT323, SOT416
3
1
2
sym021
3
SOT883
1
2
3
base
emitter
collector
1
3
2
Transparent
top view
1
2
sym021
3
BC847_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 8 — 20 August 2012
2 of 18
NXP Semiconductors
BC847 series
45 V, 100 mA NPN general-purpose transistors
3. Ordering information
Table 4.
Ordering information
Package
Name
BC847
BC847A
BC847B
BC847C
BC847W
BC847AW
BC847BW
BC847CW
BC847T
BC847AT
BC847BT
BC847CT
BC847AM
BC847BM
BC847CM
[1]
Valid for all available selection groups.
Type number
[1]
Description
plastic surface-mounted package; 3 leads
Version
SOT23
-
SC-70
plastic surface-mounted package; 3 leads
SOT323
SC-75
plastic surface-mounted package; 3 leads
SOT416
SC-101
leadless ultra small plastic package; 3 solder lands;
body 1.0
0.6
0.5 mm
SOT883
4. Marking
Table 5.
BC847
BC847A
BC847B
BC847C
BC847W
BC847AW
BC847BW
BC847CW
[1]
Marking codes
Marking code
[1]
1H*
1E*
1F*
1G*
1H*
1E*
1F*
1G*
Type number
BC847T
BC847AT
BC847BT
BC847CT
BC847AM
BC847BM
BC847CM
Marking code
[1]
1N
1E
1F
1G
D4
D5
D6
Type number
* = placeholder for manufacturing site code
BC847_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 8 — 20 August 2012
3 of 18
NXP Semiconductors
BC847 series
45 V, 100 mA NPN general-purpose transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
SOT23
SOT323
SOT416
SOT883
T
j
T
amb
T
stg
[1]
[2]
[2]
Conditions
open emitter
open base
open collector
single pulse;
t
p
1 ms
single pulse;
t
p
1 ms
T
amb
25
C
[1]
Min
-
-
-
-
-
-
Max
50
45
6
100
200
100
Unit
V
V
V
mA
mA
mA
-
-
-
-
-
65
65
250
200
150
250
150
+150
+150
mW
mW
mW
mW
C
C
C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB with 60
m
copper strip line, standard footprint.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT23
SOT323
SOT416
SOT883
[1]
[2]
[2]
Conditions
in free air
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
500
625
833
500
K/W
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB with 60
m
copper strip line, standard footprint.
BC847_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 8 — 20 August 2012
4 of 18
NXP Semiconductors
BC847 series
45 V, 100 mA NPN general-purpose transistors
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
h
FE
group A
h
FE
group B
h
FE
group C
DC current gain
h
FE
group A
h
FE
group B
h
FE
group C
V
CEsat
V
BEsat
V
BE
f
T
C
c
C
e
NF
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
transition frequency
collector capacitance
emitter capacitance
noise figure
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
V
EB
= 0.5 V; I
C
= i
c
= 0 A;
f = 1 MHz
I
C
= 200
A;
V
CE
= 5 V;
R
S
= 2 k; f = 1 kHz;
B = 200 Hz
[1]
[2]
[2]
[2]
Conditions
V
CB
= 30 V; I
E
= 0 A
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 10
A
Min
-
-
-
Typ
-
-
-
Max
15
5
100
Unit
nA
A
nA
I
EBO
h
FE
-
-
-
V
CE
= 5 V; I
C
= 2 mA
110
110
200
420
-
-
-
-
580
-
100
-
-
-
90
150
270
-
180
290
520
90
200
700
900
660
-
-
-
11
2
-
-
-
800
220
450
800
200
400
-
-
700
770
-
1.5
-
10
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
[1]
[2]
Pulse test: t
p
300
s;
= 0.02.
V
BE
decreases by approximately 2 mV/K with increasing temperature.
BC847_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 8 — 20 August 2012
5 of 18
模拟与混合信号
