BC846BPDW1,
BC847BPDW1,
BC848CPDW1 Series
Dual General Purpose
Transistors
NPN/PNP Duals (Complementary)
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
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SOT−363
CASE 419B
STYLE 1
(3)
(2)
(1)
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS − NPN
Rating
Collector-Emitter Voltage
BC846, SBC846
BC847, SBC847
BC848
Collector-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Symbol
V
CEO
65
45
30
V
CBO
80
50
30
V
EBO
I
C
I
CM
6.0
100
200
V
mAdc
mAdc
V
Value
Unit
V
Q
1
Q
2
(4)
(5)
(6)
MARKING DIAGRAM
6
XX MG
G
1
XX = Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Mark Package
BB
BB
BF
BF
BF
BF
BL
Shipping
†
MAXIMUM RATINGS − PNP
Rating
Collector-Emitter Voltage
BC846, SBC846
BC847, SBC847
BC848
Collector-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Symbol
V
CEO
−65
−45
−30
V
CBO
−80
−50
−30
V
EBO
I
C
I
CM
−6.0
−100
−200
V
mAdc
mAdc
V
Value
Unit
V
BC846BPDW1T1G,
SBC846BPDW1T1G
SBC846BPDW1T2G
BC847BPDW1T1G
SBC847BPDW1T1G
SBC847BPDW1T3G
BC847BPDW1T2G
BC848CPDW1T1G
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SOT−363
10,000 /
(Pb−Free) Tape & Reel
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SOT−363
3,000 /
(Pb−Free) Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
April, 2016 − Rev. 12
Publication Order Number:
BC846BPDW1T1/D
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation Per Device
FR− 5 Board (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 x 0.75 x 0.062 in.
Symbol
P
D
380
250
3.0
R
qJA
T
J
, T
stg
328
−55 to +150
mW
mW/°C
mW/°C
°C/W
°C
Max
Unit
ELECTRICAL CHARACTERISTICS (NPN)
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= 10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
Collector −Emitter Breakdown Voltage
(I
C
= 10
mA,
V
EB
= 0)
BC846, SBC846 Series
BC847B, SBC847B Only
BC848 Series
Collector −Base Breakdown Voltage
(I
C
= 10
mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
Emitter −Base Breakdown Voltage
(I
E
= 1.0
mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
Collector Cutoff Current
(V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
mA,
V
CE
= 5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
(I
C
= 2.0 mA, V
CE
= 5.0 V)
BC846B, SBC846B, BC847B, SBC84B7
BC848C
Collector −Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA) All devices except SBC847BPDW1T1G
SBC847BPDW1T1G only
(I
C
= 100 mA, I
B
= 5.0 mA) All devices
(I
C
= 2 mA, I
B
= 0.5 mA) SBC847BPDW1T1G only
Base −Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA)
Base −Emitter Voltage
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 10 mA, V
CE
= 5.0 V)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
f
T
100
C
obo
NF
−
−
10
−
−
−
−
4.5
pF
dB
MHz
h
FE
−
−
200
420
V
CE(sat)
−
−
−
−
V
BE(sat)
−
−
V
BE(on)
580
−
660
−
700
770
0.7
0.9
−
−
mV
−
−
−
0.024
0.25
0.1
0.6
−
V
150
270
290
520
−
−
475
800
V
−
V
(BR)CEO
65
45
30
V
(BR)CES
80
50
30
V
(BR)CBO
80
50
30
V
(BR)EBO
6.0
6.0
6.0
I
CBO
−
−
−
−
15
5.0
nA
mA
−
−
−
−
−
−
−
−
−
−
−
−
V
−
−
−
−
−
−
V
−
−
−
−
−
−
V
V
Symbol
Min
Typ
Max
Unit
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2
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
ELECTRICAL CHARACTERISTICS (PNP)
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= −10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
Collector −Emitter Breakdown Voltage
(I
C
= −10
mA,
V
EB
= 0)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
Collector −Base Breakdown Voltage
(I
C
= −10
mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
Emitter −Base Breakdown Voltage
(I
E
= −1.0
mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
Collector Cutoff Current
(V
CB
= −30 V)
(V
CB
= −30 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10
mA,
V
CE
= −5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
(I
C
= −2.0 mA, V
CE
= −5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
Collector −Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA) All devices except SBC847BPDW1T1G
SBC847BPDW1T1G only
(I
C
= −100 mA, I
B
= −5.0 mA) All devices
(I
C
= −2 mA, I
B
= −0.5 mA) SBC847BPDW1T1G only
Base −Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
Base −Emitter On Voltage
(I
C
= −2.0 mA, V
CE
= −5.0 V)
(I
C
= −10 mA, V
CE
= −5.0 V)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= −10 mA, V
CE
= −5.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= −10 V, f = 1.0 MHz)
Noise Figure
(I
C
= −0.2 mA, V
CE
= −5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
f
T
100
C
ob
−
NF
−
−
10
−
4.5
dB
−
−
pF
MHz
h
FE
−
−
200
420
V
CE(sat)
−
−
−
−
V
BE(sat)
−
−
V
BE(on)
−0.6
−
−
−
−0.75
−0.82
−0.7
−0.9
−
−
V
−
−
−
−0.024
−0.3
−0.1
−0.65
−
V
150
270
290
520
−
−
475
800
V
−
V
(BR)CEO
−65
−45
−30
V
(BR)CES
−80
−50
−30
V
(BR)CBO
−80
−50
−30
V
(BR)EBO
−6.0
−6.0
−6.0
I
CBO
−
−
−
−
−15
−4.0
nA
mA
−
−
−
−
−
−
−
−
−
−
−
−
V
−
−
−
−
−
−
V
−
−
−
−
−
−
V
V
Symbol
Min
Typ
Max
Unit
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3
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS − BC846/SBC846
500
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
150°C
h
FE
, DC CURRENT GAIN
400
V
CE
= 5 V
0.30
I
C
/I
B
= 20
0.25
0.20
0.15
0.10
0.05
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
150°C
25°C
−55°C
300
25°C
200
−55°C
100
0
Figure 1. DC Current Gain vs. Collector
Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.1
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
150°C
−55°C
25°C
I
C
/I
B
= 20
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5 V
−55°C
25°C
150°C
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Base Emitter Voltage vs. Collector
Current
2.0
T
A
= 25°C
1.6
20 mA
1.2
I
C
=
10 mA
50 mA
100 mA
200 mA
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
-1.0
-1.4
-1.8
q
VB
for V
BE
-2.2
-55°C to 125°C
0.8
0.4
-2.6
0
-3.0
0.2
0.5
10 20
1.0 2.0
5.0
I
C
, COLLECTOR CURRENT (mA)
50
100
200
0.02
0.05
0.1
0.2
0.5
1.0 2.0
I
B
, BASE CURRENT (mA)
5.0
10
20
Figure 5. Collector Saturation Region
Figure 6. Base−Emitter Temperature Coefficient
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4
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS − BC846/SBC846
40
T
A
= 25°C
C, CAPACITANCE (pF)
20
C
ib
10
6.0
4.0
C
ob
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
500
V
CE
= 5 V
T
A
= 25°C
200
100
50
20
2.0
0.1
0.2
0.5
1.0 2.0
10 20
5.0
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
1.0
5.0 10
50 100
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Capacitance
Figure 8. Current−Gain − Bandwidth Product
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5
