BC847...-BC850...
NPN Silicon AF Transistors
•
For AF input stages and driver applications
•
High current gain
•
Low collector-emitter saturation voltage
•
Low noise between 30 Hz and 15 kHz
•
Complementary types:
BC857...-BC860...(PNP)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
1)
1
BC847BL3
is not qualified according AEC Q101
Type
BC847A
BC847B
BC847BL3*
BC847BW
BC847C
BC847CW
BC848A
BC848B
BC848BL3
BC848BW
BC848C
BC848CW
BC849B
BC849C
BC849CW
BC850B
BC850BW
BC850C
BC850CW
Marking
1Es
1Fs
1F
1Fs
1Gs
1Gs
1Js
1Ks
1K
1Ks
1Ls
1Ls
2Bs
2Cs
2Cs
2Fs
2Fs
2Gs
2Gs
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT23
SOT23
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
* Not qualified according AEC Q101
1
2011-09-09
BC847...-BC850...
Maximum Ratings
Parameter
Collector-emitter voltage
BC847..., BC850...
BC848..., BC849...
Collector-emitter voltage
BC847..., BC850...
BC848..., BC849...
Collector-base voltage
BC847..., BC850...
BC848..., BC849...
Emitter-base voltage
BC847..., BC850...
BC848..., BC849...
Collector current
Peak collector current,
t
p
≤
10 ms
Total power dissipation-
T
S
≤
71 °C, BC847-BC850
T
S
≤
135 °C, BC847BL3-BC848BL3
T
S
≤
124 °C, BC847W-BC850W
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BC847-BC850
BC847BL3-BC848BL3
BC847W-BC850W
T
j
T
stg
Symbol
R
thJS
I
C
I
CM
P
tot
330
250
250
150
-65 ... 150
Value
≤
240
≤
60
≤
105
Unit
K/W
°C
V
EBO
6
6
100
200
mW
mA
V
CBO
50
30
V
CES
50
30
Symbol
V
CEO
45
30
Value
Unit
V
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2011-09-09
BC847...-BC850...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 10 mA,
I
B
= 0 , BC847..., BC850...
I
C
= 10 mA,
I
B
= 0 , BC848..., BC849...
Unit
V
45
30
V
(BR)CBO
-
-
-
-
6
-
-
-
-
-
µA
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0 , BC847..., BC850...
I
C
= 10 µA,
I
E
= 0 , BC848..., BC849...
50
30
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
I
E
= 0 ,
I
C
= 10 µA
-
Collector-base cutoff current
V
CB
= 45 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
h
FE
0.015
5
140
250
480
180
290
520
-
-
-
-
-
-
220
450
800
mV
DC current gain
1)
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.A
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.B
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.C
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.C
-
-
-
110
200
420
V
CEsat
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
-
-
V
BEsat
90
200
700
900
660
-
250
600
-
-
700
770
Base emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
-
-
V
BE(ON)
Base-emitter voltage
1)
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
1
Pulse test: t < 300µs; D < 2%
580
-
3
2011-09-09
BC847...-BC850...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.C
Open-circuit reverse voltage transf. ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.C
Short-circuit forward current transf. ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.C
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.C
Noise figure
I
C
= 200 µA,
V
CE
= 5 V,
f
= 1 kHz,
∆
f
= 200 Hz,
R
S
= 2 kΩ, BC849..., BC850...
Equivalent noise voltage
I
C
= 200 µA,
V
CE
= 5 V,
R
S
= 2 kΩ,
f
= 10 ... 50 Hz , BC850...
V
n
-
-
0.135 µV
F
h
22e
-
-
-
-
18
30
60
1.2
-
-
-
4
dB
h
21e
-
-
-
200
330
600
-
-
-
µS
h
12e
-
-
-
1.5
2
3
-
-
-
h
11e
-
-
-
2.7
4.5
8.7
-
-
-
10
-4
kΩ
C
eb
-
9
-
C
cb
-
0.95
-
pF
f
T
-
250
-
MHz
Symbol
min.
Values
typ.
max.
Unit
4
2011-09-09
BC847...-BC850...
DC current gain
h
FE
=
ƒ(I
C
)
V
CE
= 5 V
10
3
EHP00365
Collector-emitter saturation voltage
I
C
=
ƒ(V
CEsat
),
h
FE
= 20
10
2
EHP00367
h
FE
5
100 C
25 C
Ι
C
mA
100 C
25 C
-50 C
10
2
5
-50 C
10
1
5
10
1
5
10
5
0
10
0
10
-2
5
10
-1
5
10
0
5
10
1
mA
10
2
10
-1
0
0.1
0.2
0.3
0.4
V 0.5
V
CEsat
Ι
C
Base-emitter saturation voltage
I
C
=
ƒ(V
BEsat
),
h
FE
= 20
10
2
EHP00364
Collector cutoff current
I
CBO
=
ƒ(T
A
)
V
CB
= 30 V
10
4
EHP00415
Ι
C
mA
100 C
25 C
-50 C
Ι
CB0
nA
max
10
3
5
10
1
5
10
2
5
typ
10
0
5
10
5
1
10
-1
10
0
0
0.2
0.4
0.6
0.8
V
1.2
0
50
100
˚C
T
A
150
V
BEsat
5
2011-09-09
微控制器 MCU
