BC856AW/BW
BC857AW/BW
BC858AW/BW/CW
General Purpose Transistor
PNP Silicon
P b
Lead(Pb)-Free
1
BASE
COLLECTOR
3
3
1
2
2
EMITTER
SOT-323(SC-70)
MaximumRatings
(T
A
=25°Cunless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
BC856
BC857
BC858
BC856
BC857
BC858
BC856
BC857
BC858
V
CEO
-65
-45
-30
-80
-50
-30
-5.0
-5.0
-5.0
100
150
833
-55 to +150
-55 to +150
V
Collector-Base Voltage
V
CBO
V
Emitter-Base Voltage
V
EBO
I
C
P
D
R
θJA
T
J
Tstg
V
Collector Current-Continuous
Total Device Dissipation FR-5 Board
(1)
T
A
=25°C
Thermal Resistance, Junctionto Ambient
(1)
Junction Temperature Range
Storage Temperature Range
m
A
mW
°C/W
°C
°C
Device Marking
BC856AW=3A; BC856BW=3B; BC857AW=3E;BC857BW=3F; BC858AW=3J; BC858BW;=3K; BC858CW=3L
1. FR-5 = 1.0 x 0.75 x 0.062 in.
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BC856AW/BW
BC857AW/BW
BC858AW/BW/CW
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Symbol
Min
Typ
Max
Unit
Electrical Characteristics
(T
A
=25ºC Unless Otherwise noted)
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage
I
C
=-10mA
Collector-Emitter Breakdown Voltage
I
C
=-10uA, V
EB
=0
Collector-Base Breakdown Voltage
I
C
=-10µA
Emitter-Base Breakdown Voltage
I
E
=-1.0µA
Collector Cutoff Current
V
CB
=-30V
V
CB
=-30V, T
A
=150°C
BC856 Series
BC857 Series
BC858 Series
BC856 Series
BC857 Series
BC858 Series
BC856 Series
BC857 Series
BC858 Series
BC856 Series
BC857 Series
BC858 Series
V
(BR)CEO
-65
-45
-30
-80
-50
-30
-80
-50
-30
-5.0
-5.0
-5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-15
-4.0
V
V
(BR)CES
V
V
V
(BR)CBO
V
(BR)EBO
V
I
CBO
nA
µA
On Characteristics
DC Current Gain
I
C
=-10µA, V
CE
=-5.0V
I
C
=-2.0mA,V
CE
=-5.0V)
BC856A,BC857A,BC858A
BC856B,BC857B,BC858B
BC858C
BC856A,BC857A,BC858A
BC856B,BC857B,BC858B
BC858C
-
-
-
125
220
420
-
-
-
-
-0.6
-
90
150
270
180
290
520
-
-
-0.7
-0.9
-
-
-
-
-
250
450
800
-0.3
-0.65
-
-
-0.75
-0.82
h
FE
-
Collector-Emitter Saturation Voltage
I
C
=-10mA, I
B
=-0.5mA
I
C
=-100mA,I
B
=-5.0mA
Base-Emitter Saturation Voltage
I
C
=-10mA, I
B
=-0.5mA
I
C
=-100mA I
B
=-5.0mA
Base-Emitter On Voltage
I
C
=-2.0mA, V
CE
=-5.0V
I
C
=-10mA, V
CE
=-5.0V
V
CE(sat)
V
V
BE(sat)
V
V
BE(on)
V
Small-signal Characteristics
Current-Gain-Band width Product
I
C
=-10mA, V
CE
=-5.0V, f=100MHz
Output Capacitance
V
CB
=-10V,f=1.0MHz
Noise Figure
IC=-0.2mA, VCE=-5.0V, Rs=2.0kΩ, f=1.0kHz, BW=200Hz
f
T
C
ob
NF
100
-
-
-
-
-
-
4.5
10
MHz
pF
dB
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BC856AW/BW
BC857AW/BW
BC858AW/BW/CW
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BC857 / BC858
2.0
–1.0
h
FE
, NORMALIZED DC CURRENT GAIN
1.5
V, VOLTAGE (VOLTS)
V
CE
= –10 V
T
A
= 25°C
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
=10
1.0
0.7
V
BE(on)
@ V
CE
= –10 V
0.5
0.3
V
CE(sat)
@ I
C
/I
B
= 10
–0.1
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
0.2
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
–200
0
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
θ
VB
, TEMPERATURE COEFFICIENT (mV/ °C)
Figure 2. “Saturation” and “On” Voltages
I
C
, COLLECTOR CURRENT (mAdc)
V
CE
, COLLECTOR– EMITTER VOLTAGE (V)
–2.0
1.0
T
A
= 25°C
–1.6
–55°C to +125°C
1.2
1.6
–1.2
2.0
–0.8
I
C
=
I
C
= –50 mA
I
C
= –20 mA
–10 mA
I
C
= –200 mA
I
C
= –100 mA
2.4
–0.4
2.8
0
–0.02
–0.1
–1.0
–10
–20
–0.2
–1.0
–10
–100
Figure 3. Collector Saturation Region
400
I
B
, BASE CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
10.0
C
ib
T
A
=25°C
f
T
, CURRENT– GAIN – BANDWIDTH
PRODUCT (MHz)
7.0
300
C, CAPACITANCE(pF)
200
150
100
80
5.0
3.0
C
ob
V
CE
= –10V
T
A
= 25°C
2.0
60
40
30
20
–0.5
–1.0
–2.0
–3.0
–5.0
–10
–20
–30
–50
1.0
–0.4
–0.6
–1.0
–2.0
–4.0
–6.0
–10
–20 –30 –40
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
I
C
, COLLECTOR CURRENT (mAdc)
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BC856AW/BW
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BC856
h
FE
, DC CURRENT GAIN (NORMALIZED)
–1.0
V
CE
= –5.0V
T
A
= 25°C
2.0
1.0
0.5
0.2
–0.1–0.2
–1.0 –2.0 –5.0 –10 –20 –50 –100–200
I
C
, COLLECTOR CURRENT (mA)
T
J
= 25°C
V, VOLTAGE (VOLTS)
–0.8
–0.6
–0.4
–0.2
0
–0.2
V
BE(sat)
@ I
C
/I
B
=10
V
BE
@V
CE
= –5.0 V
V
CE(sat)
@ I
C
/I
B
= 10
–0.5 –1.0 –2.0
–5.0
–10 –20
–50 –100 –200
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
Figure 8. “On” Voltage
V
CE
, COLLECTOR– EMITTER VOLTAGE (VOLTS)
–1.6
I
C
=
–20mA
–50mA
–100mA –200mA
θ
VB
, TEMPERATURE COEFFICIENT (mV/°C)
–2.0
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
–0.2
–1.2
–0.8
–0.4
–10mA
θ
VB
for V
BE
–55°C to 125°C
0
–0.02
T
J
= 25°C
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
–5.0
–10 –20
–0.5 –1.0 –2.0
–5.0
–10 –20
–50 –100 –200
Figure 9. Collector Saturation Region
f
T
, CURRENT– GAIN – BANDWIDTH PRODUCT T
I
B
, BASE CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
40
C, CAPACITANCE (pF)
20
T
J
= 25°C
C
ib
500
V
CE
= –5.0V
200
100
50
20
–1.0
–10
–100
10
6.0
4.0
2.0
–0.1 –0.2 –0.5
C
ob
–1.0 –2.0
–5.0
–10 –20
–50 –100
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
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1.0
0.7
r( t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
D=0.5
0.2
0.05
SINGLE PULSE
0.1
SINGLE PULSE
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
Z
θJC
(t) = r(t) R
θJC
R
θJC
= 83.3°C/W MAX
Z
θJA
(t) = r(t) R
θJA
R
θJA
= 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
R
θJC
(t)
0.2
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
50
100
200
500
1.0k 2.0k
5.0k
10k
Figure 13. Thermal Response
–200
I
C
, COLLECTOR CURRENT (mA)
–100
–50
T
A
= 25°C
1s
T
J
= 25°C
3 ms
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150°C; T
C
or T
A
is variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T
J(pk)
< 150°C. T
J(pk)
may be calcu-
lated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the sec-
ondary breakdown.
The safe operating area curves indicate I
C
–V
CE
limits of the
–10
–5.0
–2.0
–1.0
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–0.5
–10
–30 –45 –65 –100
V
CE
, COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
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