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BC857AW-13

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

器件类别：分立半导体    晶体管   

厂商名称：Diodes Incorporated

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Diodes Incorporated
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
45 V
配置
SINGLE
最小直流电流增益 (hFE)
125
JESD-30 代码
R-PDSO-G3
JESD-609代码
e0
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
235
极性/信道类型
PNP
认证状态
Not Qualified
表面贴装
YES
端子面层
TIN LEAD
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
10
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
200 MHz
文档预览
SPICE MODELS: BC856AW BC856BW BC857AW BC857BW BC857CW BC858AW BC858BW BC858CW
BC856AW - BC858CW
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
·
·
·
·
Ideally Suited for Automatic Insertion
Complementary NPN Types Available (BC846W-BC848W)
For Switching and AF Amplifier Applications
Available in Lead Free/RoHS Compliant Version (Note 3)
B C
A
C
SOT-323
Dim
A
B
C
D
E
G
M
Min
0.25
1.15
2.00
0.30
1.20
1.80
0.0
0.90
0.25
0.10
0°
Max
0.40
1.35
2.20
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-323
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 6, on Page 2
Pin Connections: See Diagram
Marking Code: See Table Below & Diagram
on Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
J
K
B
G
H
E
0.65 Nominal
H
J
K
L
M
a
D
F
L
All Dimensions in mm
Marking Code (Note 2)
Type
BC856AW
BC856BW
BC857AW
BC857BW
Marking
K3A
K3B
K3V, K3A
K3W, K3B
Type
BC857CW
BC858AW
BC858BW
BC858CW
Marking
K3G
K3J, K3A, K3V
K3K, K3B, K3W
K3L, K3G
Maximum Ratings
Collector-Base Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
BC856
BC857
BC858
BC856
BC857
BC858
V
CBO
Value
-80
-50
-30
-65
-45
-30
-5.0
-100
-200
-200
200
625
-65 to +150
Unit
V
Characteristic
Collector-Emitter Voltage
V
CEO
V
EBO
I
C
I
CM
I
EM
P
d
R
qJA
T
j
, T
STG
V
V
mA
mA
mA
mW
°C/W
°C
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Current gain subgroup “C” is not available for BC856W.
3. No purposefully added lead.
DS30251 Rev. 5 - 2
1 of 3
www.diodes.com
BC856AW - BC858CW
ã
Diodes Incorporated
Electrical Characteristics
Characteristic
@ T
A
=25°C unless otherwise specified
Symbol
BC856
BC857
BC858
BC856
BC857
BC858
V
(BR)CBO
Min
-80
-50
-30
-65
-45
-30
-5
125
220
420
—
—
—
-600
—
—
—
100
—
—
Typ
—
—
—
—
—
—
—
180
290
520
-75
-250
-700
-850
-650
—
—
—
200
3
—
Max
—
—
—
—
—
—
—
250
475
800
-300
-650
—
-950
-750
-820
-15
-4.0
—
4.5
10
Unit
V
Test Condition
I
C
= 10mA, I
B
= 0
Collector-Base Breakdown Voltage (Note 4)
Collector-Emitter Breakdown Voltage (Note 4)
V
(BR)CEO
V
(BR)EBO
h
FE
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
I
CBO
I
CBO
f
T
C
CBO
NF
V
V
—
mV
mV
mV
nA
µA
MHz
pF
dB
I
C
= 10mA, I
B
= 0
I
E
= 1mA, I
C
= 0
V
CE
= -5.0V, I
C
= -2.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
V
CB
= -30V
V
CB
= -30V, T
A
= 150°C
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
V
CB
= -10V, f = 1.0MHz
V
CE
= -5.0V, I
C
= 200µA,
R
S
= 2kW, f = 1kHz,
Df
= 200Hz
Emitter-Base Breakdown Voltage (Note 4)
DC Current Gain (Note 4)
Current Gain Group A
B
C
Collector-Emitter Saturation Voltage (Note 4)
Base-Emitter Saturation Voltage (Note 4)
Base-Emitter Voltage (Note 4)
Collector-Cutoff Current (Note 4)
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
4. Short duration pulse test to minimize self-heating effect.
Ordering Information
Device
BC85xxW-7*
Notes:
(Note 5)
Packaging
SOT-323
Shipping
3000/Tape & Reel
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
*xx = device type, e.g. BC856AW-7.
6. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BC856AW-7-F.
Marking Information
XXX
XXX = Product Type Marking Code (See Page 1), e.g. K3A = BC856AW
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
Feb
2
2000
L
March
3
2001
M
Apr
4
2002
N
May
5
2003
P
Jun
6
2004
R
Jul
7
2005
S
Aug
8
2006
T
Sep
9
2007
U
Oct
O
2008
V
Nov
N
2009
W
Dec
D
DS30251 Rev. 5 - 2
YM
2 of 3
www.diodes.com
BC856AW - BC858CW
250
P
D
, POWER DISSIPATION (mW)
0.5
V
CE(SAT)
, COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
I
C
I
B
= 10
200
0.4
150
0.3
100
0.2
T
A
= 25°C
T
A
= 150°C
50
0.1
T
A
= -50°C
0
0.1
1
10
100
1000
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
1000
h
FE
, DC CURRENT GAIN (NORMALIZED)
T
A
= 150°C
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 Collector Emitter Saturation Voltage
vs. Collector Current
1000
f
t
, GAIN BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
V
CE
= 5V
100
T
A
= 25°C
T
A
= -50°C
100
10
1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain (Group B) vs. Collector Current
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs Collector Current
DS30251 Rev. 5 - 2
3 of 3
www.diodes.com
BC856AW - BC858CW
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参数对比
与BC857AW-13相近的元器件有：BC858BW-13、BC857BW-13、BC857CW-13、BC858CW-13、BC856AW-13、BC858AW-13、BC856BW-13。描述及对比如下：
型号 BC857AW-13 BC858BW-13 BC857BW-13 BC857CW-13 BC858CW-13 BC856AW-13 BC858AW-13 BC856BW-13
描述 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
针数 3 3 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 45 V 30 V 45 V 45 V 30 V 65 V 30 V 65 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 125 220 220 420 420 125 125 220
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0
元件数量 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） 235 235 235 235 235 235 235 235
极性/信道类型 PNP PNP PNP PNP PNP PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES YES YES
端子面层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 10 10 10 10 10 10 10 10
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz
厂商名称 Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated - - Diodes Incorporated Diodes Incorporated
Base Number Matches - 1 1 1 1 1 - -
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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