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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D187
BC859W; BC860W
PNP general purpose transistors
Product data sheet
Supersedes data of 1997 Sep 03
1999 Apr 12
NXP Semiconductors
Product data sheet
PNP general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC849W and BC850W.
MARKING
TYPE
NUMBER
BC859W
BC859BW
BC859CW
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING
CODE
4D∗
4B∗
4C∗
TYPE
NUMBER
BC860W
BC860BW
BC860CW
MARKING
CODE
4H∗
4F∗
4G∗
1
Top view
handbook, halfpage
BC859W; BC860W
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
2
MAM048
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BC859W
BC860W
V
CEO
collector-emitter voltage
BC859W
BC860W
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 12
2
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
−30
−45
−5
−100
−200
−200
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
CONDITIONS
open emitter
−
−
−30
−50
V
V
MIN.
MAX.
UNIT
NXP Semiconductors
Product data sheet
PNP general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC859W; BC860W
BC859BW; BC860BW
BC859CW; BC860CW
V
CEsat
V
BE
C
c
C
e
f
T
F
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure;
BC859W; BC860W;
BC859BW; BC860BW;
BC859CW; BC860CW
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−100
mA; I
B
=
−5
mA; note 1
I
C
=
−2
mA; V
CE
=
−5
V
I
C
=
−10
mA; V
CE
=
−5
V
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
−500
mV; f = 1 MHz
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz
I
C
=
−200 μA;
V
CE
=
−5
V; R
S
= 2 kΩ;
f = 10 Hz to 15.7 kHz
I
C
=
−200 μA;
V
CE
=
−5
V; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
E
= 0; V
CB
=
−30
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−2
mA; V
CE
=
−5
V;
see Figs 2 and 3
−
−
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
BC859W; BC860W
VALUE
625
UNIT
K/W
MIN.
TYP.
−
−
−
−
−
−
−
−
−
−
−
10
−
−
−
MAX.
−15
−4
−100
800
475
800
−300
−650
750
820
5
−
−
4
4
UNIT
nA
μA
nA
220
220
420
−
−
600
−
−
−
100
−
−
mV
mV
mV
mV
pF
pF
MHz
dB
dB
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
1999 Apr 12
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC859W; BC860W
handbook, full pagewidth
400
MBH727
hFE
VCE =
−5
V
300
200
100
0
−10
−2
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
BC859BW; BC860BW.
Fig.2 DC current gain; typical values.
handbook, full pagewidth
600
MBH728
hFE
500
VCE =
−5
V
400
300
200
100
0
−10
−2
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
BC859CW; BC860CW.
Fig.3 DC current gain; typical values.
1999 Apr 12
4
