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BCD30

100ma silicon cartridge rectifiers

厂商名称:Electronic

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BCD
RTD
100mA SILICON CARTRIDGE RECTIFIERS
SMALL SIZE MOLDED PACKAGE
PRV 8,000 TO 60,000 VOLTS
FAST RECOVERY (RTD SERIES)
LOW LEAKAGE
EDI Type
Number
Peak
Reve rse V olta ge
PRV (V olts )
Max. Forward Voltage
o
Drop at 25 C And 100 mA
V
F
(Vol ts)
Leng th L
Fig. 3
BC D08
BC D10
BC D12
BC D15
BC D20
BC D25
BC D30
BC D35
BC D40
BC D45
BC D50
BC D60
RTD08
RTD10
RTD12
RTD15
RTD20
RTD25
RTD30
RTD35
RTD40
RTD45
RTD50
RTD60
STANDARD RECOVERY
8, 000
13
10,0 00
13
12,0 00
13
15,0 00
20
20,0 00
26
33
25,000
30,0 00
40
35,0 00
46
40,0 00
53
45,0 00
60
50,0 00
66
60,0 00
73
200 N AN OSE CO ND R EC OVE RY (F IG .4 )
8, 000
20
10,0 00
20
12,0 00
20
15,0 00
30
20,0 00
40
25,0 00
50
30,0 00
60
35,0 00
70
40,0 00
80
45,0 00
90
50,0 00
100
60,0 00
110
BCD SERIES
STANDARD
RECOVERY
1. 00
1. 00
1. 00
1. 63
2. 13
2. 63
3. 13
3. 63
4. 13
4. 63
5. 13
6. 13
1. 00
1. 00
1. 00
1. 63
2. 13
2. 63
3. 13
3. 63
4. 13
4. 63
5. 13
6.13
RTD SERIES
FAST
RECOVERY
ELECTRICAL CHARACTERISTICS
(at T
A
=25 C Unless Otherwise Specified)
o
Max. DC Reverse Current @ PRV and 25 C, I
R
ELECTRICAL CHARACTERISTICS
(at T
A
=25 C Unless Otherwise Specified)
Max. DC Reverse Current @ PRV and 25 C, I
R
o
2
100
A
A
2
A
Max. DC Reverse Current @ PRV and 100 C, I
R
Ambient Operating Temperature Range,T
A
o
o
Max. DC Reverse Current @ PRV and 100 C, I
R
100
A
-55
o
C to +125
o
C
-55
o
C to +150
o
C
10 Amps
3 Amps
Max. Reverse Recovery Time , T
rr
(Fig.4)
200 nanosec
-55
o
C to +125
o
C
-55
o
C to +150
o
C
10 Amps
3 Amps
Storage Temperature Range, T
STG
Max.One-Half Cycle Surge Current, I
FM
(Surge )@ 60Hz
Forward Current Repetitive Peak,I
FRM
Ambient Operating Temperature Range,T
A
Storage Temperature Range, T
STG
Max.One-Half Cycle Surge Current, I
FM
(Surge )@ 60Hz
Forward Current Repetitive Peak,I
FRM
EDI reserves the right to change these specifications at any time without notice.
BCD
FIG.1
OUTPUT CURRENT vs AMBIENT TEMPERATURE
% RATED FWD CURRENT
100
100
RTD
FIG.2
NON-REPETITIVE SURGE CURRENT RATINGS
0.1SEC
1.0SEC
75
50
% MAXIMUM SURGE
0
25
50
75
100
( C)
O
75
50
25
25
0
125
150
0
1
2
3
4
5
6
7 8 9 10
20
30
40 50 60
AMBIENT TEMPERATURE
CYCLES(60 Hz)
FIG.3
PACKAGE STYLE
.030
.033
DIA.
_
L + .02
1.0 MIN.
0.39 MAX. DIA.
ALL DIMENSIONS IN INCHES
Maximum lead and terminal temperature for soldering,3/8 inch form case, 5 seconds at 250
O
C
TEST CIRCUIT
FIG.4
TYPICAL REVERSE RECOVERY WAVEFORM
T
RR
R1
50 OHM
D.U.T.
PULSE
GENERATOR
R2
1 OHM
SCOPE
+
150mA
ZERO
REFERENCE
-
300mA
75 mA
R
1,
R
2 NON-INDUCTIVE RESISTORS
PULSE GENERATOR - HEWLETT PACKARD 214A OR EQUIV.
IKC REP.RA
TE, 10 SEC. PULSE WIDTH
ADJUST PULSE AMPLITUDE FOR PEAK I
R
Reverse recovery time measured on individual rectifiers prior to assembly.
ELECTRONIC DEVICES, INC.
DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951.
21 GRAY OAKS AVENUE
* YONKERS. NEW YORK 10710 914-965-4400
* FAX 914-965-5531
* 1-800-678-0828
Ee-mail:sales@edidiodes.com
*
Wwebsite:http://www.edidiodes.com
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参数对比
与BCD30相近的元器件有:BCD08、BCD40、BCD、BCD35、BCD25、BCD20、BCD10、BCD15、BCD12。描述及对比如下:
型号 BCD30 BCD08 BCD40 BCD BCD35 BCD25 BCD20 BCD10 BCD15 BCD12
描述 100ma silicon cartridge rectifiers 100ma silicon cartridge rectifiers 100ma silicon cartridge rectifiers 100ma silicon cartridge rectifiers 100ma silicon cartridge rectifiers 100ma silicon cartridge rectifiers 100ma silicon cartridge rectifiers 100ma silicon cartridge rectifiers 100ma silicon cartridge rectifiers 100ma silicon cartridge rectifiers
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