BCR101...
NPN Silicon Digital Transistor
•
Switching circuit, inverter, interface circuit,
driver circuit
•
Built in bias resistor (R
1
= 100kΩ ,
R
2
= 100kΩ )
BCR101F/L3
BCR101T
C
3
R
1
R
2
1
B
2
E
EHA07184
Type
Marking
Pin Configuration
Package
BCR101F*
BCR101L3*
BCR101T*
*Preliminary
Maximum Ratings
Parameter
UCs
UC
UCs
1=B
1=B
1=B
2=E
2=E
2=E
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
TSFP-3
TSLP-3-4
SC75
Symbol
V
CEO
V
CBO
V
EBO
V
i(on)
I
C
P
tot
Value
50
50
10
50
50
250
250
250
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR101F,
T
S
≤
128°C
BCR101L3,
T
S
≤
135°C
BCR101T,
T
S
≤
109°C
Junction temperature
Storage temperature
1
mA
mW
T
j
T
stg
150
-65 ... 150
°C
Nov-27-2003
BCR101...
Thermal Resistance
Parameter
Junction - soldering point
1)
BCR101F
BCR101L3
BCR101T
Symbol
R
thJS
Value
≤
90
≤
60
≤
165
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
50
V
I
C
= 100 µA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R
1
R
1
/
R
2
50
-
-
70
-
0.5
1
70
0.9
-
-
-
-
-
-
-
-
-
100
1
100
3
-
100
75
-
0.3
1.8
3
130
1.1
-
-
kΩ
Collector-base cutoff current
V
CB
= 40 V,
I
E
= 0
nA
µA
-
V
Emitter-base cutoff current
V
EB
= 10 V,
I
C
= 0
DC current gain
2)
I
C
= 5 mA,
V
CE
= 5 V
Collector-emitter saturation voltage
2)
I
C
= 5 mA,
I
B
= 0.25 mA
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
Input on voltage
I
C
= 1 mA,
V
CE
= 0.3 V
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
-
MHz
pF
f
T
C
cb
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
2Pulse test: t < 300µs; D < 2%
2
Nov-27-2003
BCR101...
DC current gain
h
FE
=
ƒ
(I
C
)
V
CE
= 5 V (common emitter configuration)
10
3
Collector-emitter saturation voltage
V
CEsat
=
ƒ
(I
C
),
h
FE
= 20
10
-1
A
h
FE
10
-2
10
2
I
C
10
-3
10
1 -4
10
-3
-2
10
10
A
10
-1
10
-4
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4
V
0.5
I
C
V
CEsat
Input on Voltage
V
i
(on)
=
ƒ
(I
C
)
V
CE
= 0.3V (common emitter configuration)
10
-1
A
Input off voltage
V
i(off)
=
ƒ
(I
C
)
V
CE
= 5V (common emitter configuration)
10
-2
A
10
-2
10
-3
I
C
10
-3
IC
10
-4
10
-4
10
-5
10
-5 -1
10
10
0
10
1
V
10
2
10
-6
0.5
1
1.5
2
2.5
3
V
4
V
i(on)
V
i(off)
3
Nov-27-2003
BCR101...
Total power dissipation
P
tot
=
ƒ
(T
S
)
BCR101F
300
Total power dissipation
P
tot
=
ƒ
(T
S
)
BCR101L3
300
mW
mW
P
tot
150
P
tot
120
°C
200
200
150
100
100
50
50
0
0
20
40
60
80
100
150
0
0
20
40
60
80
100
120
°C
150
T
S
T
S
Total power dissipation
P
tot
=
ƒ
(T
S
)
BCR101T
300
Permissible Puls Load
R
thJS
=
ƒ
(t
p
)
BCR101F
10
2
mW
K/W
P
tot
200
10
1
150
100
10
0
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
50
R
thJS
0
0
20
40
60
80
100
120
°C
150
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
4
Nov-27-2003
BCR101...
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
BCR101F
10
3
Permissible Puls Load
R
thJS
=
ƒ
(t
p
)
BCR101L3
10
2
P
totmax
/P
totDC
10
2
R
thJS
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
1
10
0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
10
-1 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
tp
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
BCR101L3
10
3
Permissible Puls Load
R
thJS
=
ƒ
(t
p
)
BCR101T
10
3
K/W
P
totmax
/
P
totDC
10
2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
2
R
thJS
10
1
10
1
10
0
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
5
Nov-27-2003
