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BCV61A,215

晶体管类型:2 NPN(双)电流反射镜 集电极电流Ic:- 集射极击穿电压Vce:- 额定功率:- NPN

器件类别:分立半导体    晶体管   

厂商名称:Nexperia

厂商官网:https://www.nexperia.com

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器件参数
参数名称
属性值
Brand Name
Nexperia
厂商名称
Nexperia
零件包装代码
SOT-143
包装说明
SMALL OUTLINE, R-PDSO-G4
针数
4
制造商包装代码
SOT143B
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
FOR TRANSISTOR2 HFE IS 110
外壳连接
COLLECTOR
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
30 V
配置
CURRENT MIRROR
最小直流电流增益 (hFE)
110
JESD-30 代码
R-PDSO-G4
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
4
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子面层
Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
40
晶体管元件材料
SILICON
标称过渡频率 (fT)
100 MHz
VCEsat-Max
0.6 V
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Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
BCV61
NPN general-purpose double transistors
Rev. 04 — 18 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
BCV61
BCV61A
BCV61B
BCV61C
SOT143B
JEITA
-
BCV62
BCV62A
BCV62B
BCV62C
PNP complement
Type number
1.2 Features
Low current (max. 100 mA)
Low voltage (max. 30 V)
Matched pairs
1.3 Applications
Applications with working point independent of temperature
Current mirrors
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning
Description
collector TR2;
base TR1 and TR2
collector TR1
emitter TR1
emitter TR2
1
2
1
2
006aaa842
Simplified outline
4
3
Graphic symbol
4
3
TR2
TR1
NXP Semiconductors
BCV61
NPN general-purpose double transistors
3. Ordering information
Table 3.
Ordering information
Package
Name
BCV61
BCV61A
BCV61B
BCV61C
-
Description
plastic surface-mounted package; 4 leads
Version
SOT143B
Type number
4. Marking
Table 4.
BCV61
BCV61A
BCV61B
BCV61C
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
1M*
1J*
1K*
1L*
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBS
I
C
I
CM
I
BM
Per device
P
tot
T
j
T
amb
T
stg
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
V
CE
= 0 V
Min
-
-
-
-
-
-
Max
30
30
6
100
200
200
250
150
+150
+150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C
Per transistor
T
amb
25
°C
[1]
-
-
−65
−65
Device mounted on an FR4 Printed-Circuit Board (PCB).
BCV61_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 December 2009
2 of 13
NXP Semiconductors
BCV61
NPN general-purpose double transistors
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
Conditions
[1]
Min
-
Typ
-
Max
500
Unit
K/W
thermal resistance from junction in free air
to ambient
Device mounted on an FR4 PCB.
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Transistor TR1
I
CBO
collector-base cut-off current
V
CB
= 30 V;
I
E
= 0 A
V
CB
= 30 V;
I
E
= 0 A;
T
j
= 150
°C
I
EBO
h
FE
emitter-base cut-off current
DC current gain
V
EB
= 5 V;
I
C
= 0 A
V
CE
= 5 V;
I
C
= 100
μA
V
CE
= 5 V;
I
C
= 2 mA
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA;
I
B
= 0.5 mA
I
C
= 100 mA;
I
B
= 5 mA
V
BEsat
base-emitter saturation voltage
I
C
= 10 mA;
I
B
= 0.5 mA
I
C
= 100 mA;
I
B
= 5 mA
V
BE
base-emitter voltage
I
C
= 2 mA;
V
CE
= 5 V
I
C
= 10 mA;
V
CE
= 5 V
f
T
transition frequency
V
CE
= 5 V;
I
C
= 10 mA;
f = 100 MHz
V
CB
= 10 V;
I
E
= i
e
= 0 A;
f = 1 MHz
V
CE
= 5 V;
I
C
= 200
μA;
R
S
= 2 kΩ;
f = 1 kHz;
B = 200 Hz
[1]
Conditions
Min
-
-
Typ
-
-
Max
15
5
Unit
nA
μA
-
100
110
-
-
-
-
580
-
100
-
-
-
90
200
700
900
660
-
-
100
-
800
250
600
-
-
700
770
-
nA
mV
mV
mV
mV
mV
mV
MHz
[1]
[2]
[2]
C
c
collector capacitance
-
2.5
-
pF
NF
noise figure
-
-
10
dB
BCV61_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 December 2009
3 of 13
NXP Semiconductors
BCV61
NPN general-purpose double transistors
Table 7.
Characteristics
…continued
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Transistor TR2
V
EBS
emitter-base voltage
V
CB
= 0 V;
I
E
=
−250
mA
V
CB
= 0 V;
I
E
=
−10 μA
h
FE
DC current gain
BCV61
BCV61A
BCV61B
BCV61C
Transistors TR1 and TR2
I
C1
/I
E2
current matching
I
E2
=
−0.5
mA;
V
CE1
= 5 V
T
amb
25
°C
T
amb
150
°C
I
E2
[1]
[2]
[3]
Conditions
Min
-
−400
Typ
-
-
Max
−1.8
-
Unit
V
mV
V
CE
= 5 V;
I
C
= 2 mA
110
110
200
420
-
-
-
-
800
220
450
800
0.7
0.7
[3]
-
-
-
1.3
1.3
−5
mA
emitter current 2
V
CE1
= 5 V
-
V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
V
BE
decreases by about 2 mV/K with increasing temperature.
Device, without emitter resistors, mounted on an FR4 PCB.
BCV61_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 December 2009
4 of 13
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参数对比
与BCV61A,215相近的元器件有:BCV61B,215、BCV61C,215、BCV61,215、BCV61,235。描述及对比如下:
型号 BCV61A,215 BCV61B,215 BCV61C,215 BCV61,215 BCV61,235
描述 晶体管类型:2 NPN(双)电流反射镜 集电极电流Ic:- 集射极击穿电压Vce:- 额定功率:- NPN TRANS NPN 30V 100MA DUAL SOT143B 额定功率:250mW 集电极电流Ic:100mA 集射极击穿电压Vce:30V 晶体管类型:2 NPN(双)电流反射镜 BCV61 - NPN general-purpose double transistors SOT-143 4-Pin
Brand Name Nexperia Nexperia Nexperia Nexperia Nexperia
零件包装代码 SOT-143 SOT-143 SOT-143 SOT-143 SOT-143
包装说明 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
针数 4 4 4 4 4
制造商包装代码 SOT143B SOT143B SOT143B SOT143B SOT143B
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 30 V 30 V 30 V 30 V 30 V
配置 CURRENT MIRROR CURRENT MIRROR CURRENT MIRROR CURRENT MIRROR CURRENT MIRROR
最小直流电流增益 (hFE) 110 110 110 110 110
JESD-30 代码 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609代码 e3 e3 e3 e3 e3
湿度敏感等级 1 1 1 1 1
元件数量 1 1 1 1 1
端子数量 4 4 4 4 4
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 260 260 260 260
极性/信道类型 NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES
端子面层 Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 40 40 40 40 40
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
VCEsat-Max 0.6 V 0.6 V 0.6 V 0.6 V 0.6 V
厂商名称 Nexperia - Nexperia Nexperia Nexperia
其他特性 FOR TRANSISTOR2 HFE IS 110 FOR TRANSISTOR2 HFE IS 200 FOR TRANSISTOR2 HFE IS 420 - -
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