DISCRETE SEMICONDUCTORS
DATA SHEET
BCW69; BCW70
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 19
2004 Feb 06
NXP Semiconductors
Product data sheet
PNP general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BCW71 and BCW72.
MARKING
TYPE NUMBER
BCW69
BCW70
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
BCW69
BCW70
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base; I
C
=
−2
mA
open collector
−
−
−
−
−
−
−
−65
−
−65
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
H1*
H2*
Top view
handbook, halfpage
BCW69; BCW70
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
MIN.
MAX.
−50
−45
−5
−100
−200
−200
250
+150
150
+150
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
2004 Feb 06
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BCW69
BCW70
DC current gain
BCW69
BCW70
V
CEsat
V
BEsat
V
BE
C
c
f
T
F
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−2
mA; V
CE
=
−5
V
I
E
= I
e
= 0; V
CB
=
−10
V;
f = 1 MHz
I
C
=
−10
mA; V
CE
=
−5
V;
f = 100 MHz
I
C
=
−200 μA;
V
CE
=
−5
V;
R
S
= 2 kΩ; f = 1 kHz; B = 200 Hz
I
C
=
−2
mA; V
CE
=
−5
V
120
215
−
−
−600
−
100
−
I
C
=
−50
mA; I
B
=
−2.5
mA; note 1
−
I
C
=
−50
mA; I
B
=
−2.5
mA; note 1
−
CONDITIONS
I
E
= 0; V
CB
=
−20
V
I
E
= 0; V
CB
=
−20
V; T
j
= 100
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−10 μA;
V
CE
=
−5
V
−
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
BCW69; BCW70
VALUE
500
UNIT
K/W
MIN.
−
−
−
TYP.
−
−
−
90
150
−
−
−80
−150
−720
−810
−
4.5
−
−
MAX.
−100
−10
−100
−
−
260
500
−300
−
−
−
−750
−
−
10
UNIT
nA
μA
nA
mV
mV
mV
mV
mV
pF
MHz
dB
2004 Feb 06
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
BCW69; BCW70
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Feb 06
4
NXP Semiconductors
Product data sheet
PNP general purpose transistors
DATA SHEET STATUS
DOCUMENT
STATUS
(1)
Objective data sheet
Preliminary data sheet
Product data sheet
Notes
PRODUCT
STATUS
(2)
Development
Qualification
Production
DEFINITION
BCW69; BCW70
This document contains data from the objective specification for product
development.
This document contains data from the preliminary specification.
This document contains the product specification.
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
General
⎯
Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes
⎯
NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use
⎯
NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications
⎯
Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values
⎯
Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale
⎯
NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
No offer to sell or license
⎯
Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control
⎯
This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data
⎯
The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
2004 Feb 06
5
