BCW66K
NPN Silicon AF Transistors
•
For general AF applications
•
High current gain
•
Low collector-emitter saturation voltage
•
Complementary type: BCW68 (PNP)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
3
1
2
Type
BCW66KF
BCW66KG
BCW66KH
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Marking
EFs
EGs
EHs
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
3=C
3=C
3=C
Package
SOT23
SOT23
SOT23
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Value
45
75
5
800
1
100
200
500
150
-65 ... 150
Unit
V
mA
A
mA
mW
°C
Peak collector current,
t
p
≤
10 ms
Base current
Peak base current
Total power dissipation-
T
S
≤
115 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
≤
70
Unit
K/W
1
2011-09-30
BCW66K
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
45
I
C
= 10 mA,
I
B
= 0
Unit
V
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
V
(BR)CBO
V
(BR)EBO
I
CBO
75
5
-
-
-
-
µA
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 45 V,
I
E
= 0
V
CB
= 45 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
I
EBO
h
FE
-
-
-
0.02
20
20
nA
-
Emitter-base cutoff current
V
EB
= 5 V,
I
C
= 0
-
DC current gain
2)
I
C
= 100 µA - 10 mA,
V
CE
= 1 V, hFE-grp.F
I
C
= 100 µA - 10 mA,
V
CE
= 1 V, hFE-grp.G
I
C
= 100 µA - 10 mA,
V
CE
= 1 V, hFE-grp.H
I
C
= 100 mA,
V
CE
= 1 V, hFE-grp.F
I
C
= 100 mA,
V
CE
= 1 V, hFE-grp.G
I
C
= 100 mA,
V
CE
= 1 V, hFE-grp.H
I
C
= 500 mA,
V
CE
= 1 V, hFE-grp.F, G, H
75
110
180
100
160
250
40
V
CEsat
-
-
-
160
250
350
-
-
-
-
250
400
630
-
V
Collector-emitter saturation voltage
2)
I
C
= 100 mA,
I
B
= 10 mA
I
C
= 500 mA,
I
B
= 50 mA
-
-
V
BEsat
-
-
-
-
0.3
0.45
1.25
1.25
Base emitter saturation voltage
2)
I
C
= 100 mA,
I
B
= 10 mA
I
C
= 500 mA,
I
B
= 50 mA
2
Pulse
-
-
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
test: t < 300µs; D < 2%
2
2011-09-30
BCW66K
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 20 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
eb
-
40
-
C
cb
-
3
-
pF
f
T
-
170
-
MHz
Symbol
min.
Values
typ.
max.
Unit
3
2011-09-30
BCW66K
DC current gain
h
FE
=
ƒ
(I
C
)
V
CE
= 1 V
10
3
5
BCW 65/66
EHP00396
Collector-emitter saturation voltage
I
C
=
ƒ
(V
CEsat
),
h
FE
= 10
10
3
mA
BCW 65/66
EHP00395
100 ˚C
h
FE
25 ˚C
10
2
5
-50 ˚C
Ι
C
10
2
5
150 ˚C
25 ˚C
-50 ˚C
10
1
5
10
1
5
10
0
5
10
0
10
-1
5 10
0
5 10
1
5 10
2
mA 10
3
10
-1
0
200
400
600 mV 800
V
CE sat
Ι
C
Base-emitter saturation voltage
I
C
=
ƒ
(V
BEsat
),
h
FE
= 10
10
3
mA
BCW 65/66
EHP00394
Collector cutoff current
I
CBO
=
ƒ
(T
A
)
V
CB
=
V
CEmax
10
5
nA
BCW 65/66
EHP00393
Ι
C
10
2
5
150 ˚C
25 ˚C
-50 ˚C
Ι
CB0
10
4
5
10
3
10
5
1
5
10
2
5
max
10
5
0
typ
10
5
1
10
-1
0
1
2
3
V
V
BE sat
4
10
0
0
50
100
˚C
T
A
150
4
2011-09-30
BCW66K
Transition frequency
f
T
=
ƒ
(I
C
)
V
CE
= 5 V
10
3
MHz
f
T
5
60
55
RTF-2
BCW 65/66
EHP00391
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
Emitter-base capacitance
C
eb
=
ƒ
(V
EB
)
75
pF
50
45
40
35
30
CEB
10
2
5
25
20
15
10
5
CCB
10
1
10
0
10
1
10
2
mA
10
3
0
0
2
4
6
8
10
12
14
16
V
20
Ι
C
RTF-1
Total power dissipation
P
tot
=
ƒ
(T
S
)
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
550
10
3
P
tot max
5
P
tot DC
BCW 65/66
EHP00392
450
400
350
300
250
200
150
100
50
0
0
15
30
45
60
75
90 105 120
150
t
p
D
=
T
t
p
T
10
2
5
10
1
5
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
5
2011-09-30
工控电子
