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BCY58A.MODG4

Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:TT Electronics plc

厂商官网:http://www.ttelectronics.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
TT Electronics plc
包装说明
CYLINDRICAL, O-MBCY-W3
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
0.2 A
集电极-发射极最大电压
32 V
配置
SINGLE
最小直流电流增益 (hFE)
120
JEDEC-95代码
TO-206AA
JESD-30 代码
O-MBCY-W3
JESD-609代码
e4
元件数量
1
端子数量
3
封装主体材料
METAL
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
NO
端子面层
GOLD
端子形式
WIRE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管元件材料
SILICON
标称过渡频率 (fT)
125 MHz
文档预览
BCY58A
Dimensions in mm (inches).
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
Bipolar NPN Device in a
Hermetically sealed TO18
Metal Package.
Bipolar NPN Device.
V
CEO
= 32V
0.48 (0.019)
0.41 (0.016)
dia.
I
C
= 0.2A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
3
2
1
2.54 (0.100)
Nom.
TO18 (TO206AA)
PINOUTS
1 – Emitter
2 – Base
3 – Collector
Parameter
V
CEO
*
I
C(CONT)
h
FE
f
t
P
D
Test Conditions
Min.
Typ.
Max.
32
0.2
Units
V
A
-
Hz
@ 5/2m (V
CE
/ I
C
)
120
125M
630
0.36
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Generated
2-Aug-02
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参数对比
与BCY58A.MODG4相近的元器件有:BCY58A.MOD、BCY58AG4、BCY58A。描述及对比如下:
型号 BCY58A.MODG4 BCY58A.MOD BCY58AG4 BCY58A
描述 Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN
是否Rohs认证 符合 符合 符合 符合
厂商名称 TT Electronics plc TT Electronics plc TT Electronics plc TT Electronics plc
包装说明 CYLINDRICAL, O-MBCY-W3 HERMETIC SEALED, METAL, TO-18, 3 PIN CYLINDRICAL, O-MBCY-W3 HERMETIC SEALED, METAL, TO-18, 3 PIN
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.2 A 0.2 A 0.2 A 0.2 A
集电极-发射极最大电压 32 V 32 V 32 V 32 V
配置 SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 120 120 120 120
JEDEC-95代码 TO-206AA TO-206AA TO-206AA TO-206AA
JESD-30 代码 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
元件数量 1 1 1 1
端子数量 3 3 3 3
封装主体材料 METAL METAL METAL METAL
封装形状 ROUND ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO
端子形式 WIRE WIRE WIRE WIRE
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管元件材料 SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 125 MHz 125 MHz 125 MHz 125 MHz
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