UNISONIC TECHNOLOGIES CO., LTD
BD136-138-140
PNP SILICON TRANSISTOR
DESCRIPTION
1
PNP EPITAXIAL SILICON TRANSISTOR
The UTC
BD136/BD138/BD140
are silicon epitaxial planer PNP
transistor, designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
The complementary NPN types are the BD135/BD137/ BD139.
1
TO-251
SOT-223
1
TO-126
1
TO-126C
ORDERING INFORMATION
Pin Assignment
1
2
3
E
C
B
B
C
E
B
C
E
E
C
B
B
C
E
B
C
E
E
C
B
E
C
B
B
C
E
Packing
Bulk
Tube
Tape Reel
Bulk
Tube
Tape Reel
Bulk
Bulk
Tube
Ordering Number
Package
Lead Free
Halogen Free
BD136L-xx-T60-K
BD136G-xx-T60-K
TO-126
BD136L-xx-TM3-T
BD136G-xx-TM3-T
TO-251
-
BD138G-xx-AA3-R
SOT-223
BD138L-xx-T60-K
BD138G-xx-T60-K
TO-126
BD138L-xx-TM3-T
BD138G-xx-TM3-T
TO-251
-
BD140G-xx-AA3-R
SOT-223
BD140L-xx-T60-K
BD140G-xx-T60-K
TO-126
BD140L-xx-T6C-K
BD140G-xx-T6C-K
TO-126C
BD140L-xx-TM3-T
BD140G-xx-TM3-T
TO-251
Note: Pin Assignment: E: Emitter
C: Collector
B: Base
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BD136-138-140
MARKING
BD136
PACKAGE
PNP EPITAXIAL SILICON TRANSISTOR
MARKING
BD138
BD140
SOT-223
-
TO-251
TO-126
TO-126C
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BD136-138-140
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
PNP EPITAXIAL SILICON TRANSISTOR
RATINGS
UNIT
BD136
-45
Collector-Base Voltage
BD138
V
CBO
-60
V
BD140
-80
BD136
-45
Collector-Emitter Voltage
BD138
V
CEO
-60
V
BD140
-80
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-1.5
V
Collector Peak Current
I
CM
-3
A
Base Current
I
B
-0.5
A
SOT-223
8
Power Dissipation
T
C
≦
25°C TO-126/TO-126C
P
D
12.5
W
TO-251
15
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C ~70°C operating temperature
range and assured by design from –20°C ~85°C.
THERMAL DATA
PARAMETER
SYMBOL
θ
JA
RATINGS
155
100
83
15.5
10
8.3
UNIT
°C/W
SOT-223
Junction to Ambient
TO-126/TO-126C
TO-251
SOT-223
Junction to Case
TO-126/TO-126C
TO-251
Note: Transistor mounted on an FR4 printed circuit board.
θ
JC
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BD136
BD138
BD140
V
CEO(SUS)
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
TEST CONDITIONS
I
C
=-30mA, I
B
=0 (Note)
V
CB
=-30 V, I
E
=0
V
CB
=-30 V, I
E
=0, T
C
= 125C
V
EB
= -5 V, I
C
=0
V
CE
=-2V, I
C
=-5mA,
V
CE
=-2V, I
C
=-0.5A
V
CE
=-2V, I
C
=-150mA
MIN
-45
-60
-80
TYP MAX UNIT
V
-0.1
-10
-10
25
25
40
μA
μA
Collector-Emitter
Sustaining Voltage
Collector Cut-off Current
Emitter Cut- off Current
DC Current Gain
250
-0.5
-1
V
V
Collector-Emitter Saturation
V
CE(SAT)
I
C
=-0.5A, I
B
= -0.05A (Note)
Voltage
Base-Emitter Voltage
V
BE
I
C
=-0.5A, V
CE
=-2 V (Note)
Note: Pulsed: Pulse duration
≦
300μs, duty cycle 1.5 %
CLASSIFICATION OF h
FE3
RANK
RANGE
6
40~100
10
63~160
16
100~250
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BD136-138-140
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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