BD240/A/B/C
PNP EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LINEAR AND SWITCHING
APPLICATIONS
•
Complement to BD239/A/B/C respectively
TO-220
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Emitter Voltage : BD240
:BD240A
:BD240B
:BD240C
Collector Emitter Voltage : BD240
:BD240A
:BD240B
:BD240C
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation ( T
C
=25°C)
Junction Temperature
Storage Temperature
Symbol
V
CEO
Rating
- 45
- 60
- 80
- 100
- 55
- 70
- 90
- 115
-5
-2
-4
- 0.6
30
150
-65 ~ 150
Unit
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
V
CER
1.Base 2.Collector 3.Emitter
V
EBO
I
C
I
C
I
B
P
C
T
J
T
STG
ELECTRICAL CHARACTERISTICS
(T
C
=25°C)
Characteristic
* Collector Emitter Sustaining Voltage : BD240
: BD240A
: BD240B
: BD240C
Collector Cutoff Current
: BD240/A
: BD240B/C
Collector Cutoff Current
: BD240
: BD240A
: BD240B
: BD240C
Emitter Cutoff Current
* DC Current Gain
* Collector Emitter Saturation Voltage
* Base Emitter On Voltage
* Pulse Test: PW =350µs, duty Cycle≤2.0% Pulsed
Symbol
V
CEO
(sus)
Test Conditions
I
C
= - 30mA, I
B
= 0
Min
-45
- 60
- 80
- 100
- 0.3
- 0.3
- 0.2
- 0.2
- 0.2
- 0.2
-1
40
15
- 0.7
- 1.3
V
V
Typ
Max
Unit
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
I
CEO
I
CES
V
CE
= - 30V, I
B
= 0
V
CE
= - 60V, I
B
= 0
V
CE
= - 45V, V
BE
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 4V,I
C
= - 0.2A
V
CE
= - 4V, I
C
= - 1A
I
C
= - 1A, I
B
= - 0.2A
V
CE
= - 4V, I
C
= - 1A
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
Rev. B
©
1999 Fairchild Semiconductor Corporation
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