INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
BD540B
DESCRIPTION
·DC
Current Gain -
: h
FE
= 40(Min.)@ I
C
= -
0.5A
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -80V(Min)
·Complement
to Type BD539B
APPLICATIONS
·Designed
for use in medium power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
w
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i
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cs
.is
w
w
VALUE
-80
UNIT
V
-80
-5
V
V
-5
2
A
W
45
150
-65~150
℃
℃
MAX
2.78
62.5
UNIT
℃/W
℃/W
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BD540B
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= -30mA; I
B
= 0
-80
V
V
CE(
sat
)-1
Collector-Emitter Saturation Voltage
I
C
= -1A; I
B
= -0.125A
B
-0.25
V
V
CE(
sat
)-2
Collector-Emitter Saturation Voltage
I
C
= -3A; I
B
= -0.375A
B
-0.8
V
V
CE(
sat
)-3
Collector-Emitter Saturation Voltage
I
C
= -5A; I
B
= -1A
B
-1.5
V
V
BE(
on
)
Base-Emitter On Voltage
I
CEO
Collector Cutoff Current
I
CES
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
w
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i
em
cs
.is
w
w
V
CB
= -60V; I
B
= 0
B
I
C
= -3A; V
CE
= -4V
-1.25
V
-0.3
mA
V
CE
= -80V; V
BE
= 0
-0.2
mA
V
EB
= -5V; I
C
= 0
-1.0
mA
I
C
= -0.5A; V
CE
= -4V
40
I
C
= -1A; V
CE
= -4V
30
h
FE-3
DC Current Gain
I
C
= -3A; V
CE
= -4V
12
isc Website：www.iscsemi.cn
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