BD544, BD544A, BD544B, BD544C
PNP SILICON POWER TRANSISTORS
●
●
●
●
●
Designed for Complementary Use with the
BD543 Series
70 W at 25°C Case Temperature
8 A Continuous Collector Current
10 A Peak Collector Current
Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD544
Collector-base voltage (I
E
= 0)
BD544A
BD544B
BD544C
BD544
Collector-emitter voltage (I
B
= 0)
BD544A
BD544B
BD544C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
I
CM
P
tot
P
tot
T
A
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
-40
-60
-80
-100
-40
-60
-80
-100
-5
-8
-10
70
2
-65 to +150
-65 to +150
-65 to +150
260
V
A
A
W
W
°C
°C
°C
°C
V
V
UNIT
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BD544, BD544A, BD544B, BD544C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD544
V
(BR)CEO
I
C
= -30 mA
(see Note 4)
V
CE
= -40 V
I
CES
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= -60 V
V
CE
= -80 V
V
CE
= -100 V
I
CEO
I
EBO
V
CE
= -30 V
V
CE
= -60 V
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
I
B
=
I
B
=
V
CE
=
-5 V
-4 V
-4 V
-4 V
-0.3 A
-1 A
-1.6 A
-4 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
-1 A
-3 A
-5 A
-3 A
-5 A
- 8A
-5 A
(see Notes 4 and 5)
f = 1 kHz
f = 1 MHz
20
3
(see Notes 4 and 5)
(see Notes 4 and 5)
60
40
15
-0.5
-0.5
-1
-1.4
V
V
I
B
= 0
BD544A
BD544B
BD544C
BD544
BD544A
BD544B
BD544C
BD544/544A
BD544B/544C
MIN
-40
-60
-80
-100
-0.4
-0.4
-0.4
-0.4
-0.7
-0.7
-1
mA
mA
mA
V
TYP
MAX
UNIT
h
FE
V
CE(sat)
V
BE
h
fe
V
CE
= -10 V
V
CE
= -10 V
I
C
= -0.5 A
I
C
= -0.5 A
|
h
fe
|
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.79
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= -6 A
V
BE(off)
= 4 V
I
B(on)
= -0.6 A
R
L
= 5
Ω
†
MIN
I
B(off)
= 0.6 A
t
p
= 20 µs, dc
≤
2%
TYP
0.4
0.7
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD544, BD544A, BD544B, BD544C
PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE
= -4 V
T
C
= 25°C
t
p
= 300 µs, duty cycle < 2%
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
1000
TCS634AI
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
-10
TCS634AE
I
C
= -300 mA
I
C
= -1 A
I
C
= -3 A
I
C
= -6 A
-1·0
h
FE
- DC Current Gain
100
10
-0·1
1·0
-0·1
-1·0
I
C
- Collector Current - A
-10
-0·01
-0·001
-0·01
-0·1
I
B
- Base Current - A
-1·0
-10
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
-1·2
V
CE
= -4 V
T
C
= 25°C
V
BE
- Base-Emitter Voltage - V
-1·1
TCS634AF
-1·0
-0·9
-0·8
-0·7
-0·6
-0·1
-1·0
I
C
- Collector Current - A
-10
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BD544, BD544A, BD544B, BD544C
PNP SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-10
SAS634AF
I
C
- Collector Current - A
-1·0
-0·1
-0·01
-1·0
BD544
BD544A
BD544B
BD544C
-10
-100
-1000
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
80
P
tot
- Maximum Power Dissipation - W
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
TIS633AD
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD544, BD544A, BD544B, BD544C
PNP SILICON POWER TRANSISTORS
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
3,96
3,71
10,4
10,0
2,95
2,54
6,6
6,0
15,90
14,55
1,32
1,23
see Note B
see Note C
6,1
3,5
0,97
0,61
1
2
3
1,70
1,07
14,1
12,7
2,74
2,34
5,28
4,88
2,90
2,40
0,64
0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
5
WindowsCE
