BD895A, BD897A, BD899A
NPN SILICON POWER DARLINGTONS
●
●
●
●
Designed for Complementary Use with
BD896A, BD898A and BD900A
70 W at 25°C Case Temperature
8 A Continuous Collector Current
Minimum h
FE
of 750 at 3V, 3A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD895A
Collector-base voltage (I
E
= 0)
BD897A
BD899A
BD895A
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating free-air temperature range
Operating junction temperature range
Storage temperature range
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
BD897A
BD899A
V
EBO
I
C
I
B
P
tot
P
tot
T
A
T
j
T
stg
V
CEO
V
CBO
SYMBOL
VALUE
45
60
80
45
60
80
5
8
0.3
70
2
-65 to +150
-65 to +150
-65 to +150
V
A
A
W
W
°C
°C
°C
V
V
UNIT
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BD895A, BD897A, BD899A
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V
(BR)CEO
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
I
C
= 100 mA
V
CE
= 30 V
V
CE
= 30 V
V
CE
= 40 V
V
CB
= 45 V
V
CB
= 60 V
I
CBO
Collector cut-off
current
V
CB
= 80 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
I
EBO
h
FE
V
CE(sat)
V
BE(on)
V
EC
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
V
EB
=
V
CE
=
I
B
=
V
CE
=
I
E
=
5V
3V
16 mA
3V
8 A
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
= 4 A
I
C
= 4 A
I
C
= 4 A
I
B
= 0
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
750
2.8
2.5
3.5
V
V
V
TEST CONDITIONS
BD895A
(see Note 3)
BD897A
BD899A
BD895A
BD897A
BD899A
BD895A
BD897A
BD899A
BD895A
BD897A
BD899A
MIN
45
60
80
0.5
0.5
0.5
0.2
0.2
0.2
2
2
2
2
mA
mA
mA
V
TYP
MAX
UNIT
I
CEO
NOTES: 3. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.79
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= 3 A
V
BE(off)
= -3.5 V
I
B(on)
= 12 mA
R
L
= 10
Ω
†
MIN
I
B(off)
= -12 mA
t
p
= 20
µs,
dc
≤
2%
TYP
1
5
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD895A, BD897A, BD899A
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
50000
TCS130AD
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
2·0
t
p
= 300 µs, duty cycle < 2%
I
B
= I
C
/ 100
TCS130AB
h
FE
- Typical DC Current Gain
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
10000
1·5
1000
1·0
V
CE
= 3 V
t
p
= 300 µs, duty cycle < 2%
100
0·5
1·0
I
C
- Collector Current - A
10
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
0·5
0·5
1·0
I
C
- Collector Current - A
10
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
3·0
V
BE(sat)
- Base-Emitter Saturation Voltage - V
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
TCS130AC
2·5
2·0
1·5
1·0
I
B
= I
C
/ 100
t
p
= 300 µs, duty cycle < 2%
0·5
0·5
1·0
I
C
- Collector Current - A
10
Figure 3.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BD895A, BD897A, BD899A
NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
10
SAS130AE
I
C
- Collector Current - A
1·0
0·1
BD895A
BD897A
BD899A
0.01
1·0
10
100
1000
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
80
P
tot
- Maximum Power Dissipation - W
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
TIS130AB
Figure 5.
4
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD895A, BD897A, BD899A
NPN SILICON POWER DARLINGTONS
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
3,96
3,71
10,4
10,0
2,95
2,54
6,6
6,0
15,90
14,55
1,32
1,23
see Note B
see Note C
6,1
3,5
0,97
0,61
1
2
3
1,70
1,07
14,1
12,7
2,74
2,34
5,28
4,88
2,90
2,40
0,64
0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
5
stm32/stm8
