PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe. They are intended for use in output stages in audio equipment, general amplifiers,
and analogue switching application.
NPN complements are BD895 - BD897 - BD899 - BD901
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
T
c
= 25°
T
a
= 25°
Value
-45
-60
-80
-100
-45
-60
-80
-100
-5
Unit
V
CBO
Collector-Base Voltage
V
V
CEO
Collector-Emitter Voltage
V
V
EBO
Emitter-Base Voltage
V
I
C
Collector Current
-8
A
I
B
Base Current
-300
mA
P
T
T
J
T
s
Power Dissipation
Junction Temperature
Storage Temperature range
70
2
150
-65 to +150
Watts
°C
25/09/2012
COMSET SEMICONDUCTORS
1|4
SEMICONDUCTORS
BD896 – BD898 – BD900 – BD902
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
I
E
= 0
V
CB
= -45 V
I
E
= 0
V
CB
= -60 V
T
C
=25°C
I
E
= 0
V
CB
= -80 V
I
E
= 0
V
CB
= -100 V
I
E
= 0
V
CB
= -45 V
I
E
= 0
V
CB
= -60 V
T
C
=100°
C
I
E
= 0
V
CB
= -80 V
I
E
= 0
V
CB
= -100 V
I
E
= 0, V
CE
= - 30 V
I
E
= 0, V
CE
= - 30 V
I
E
= 0, V
CE
= - 40 V
I
E
= 0, V
CE
= - 50 V
V
EB
= -5 V, I
C
= 0
BD896
BD898
Min
Typ
Max
Unit
-
BD900
BD902
BD896
BD898
-
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
-
-0.2
mA
I
CBO
Collector Cutoff
Current
-
-2
mA
I
CEO
Collector Cutoff
Current
-
-
-0.5
mA
I
EBO
Emitter Cutoff
Current
-
-45
-60
-80
-100
-
-
-
-
-
-
-
-2
-
-
-
-
-2.5
mA
V
CEO
Collector-Emitter
Breakdown Voltage
(*)
I
C
= -100 mA, I
B
= 0
V
V
CE(SAT)
Collector-Emitter
I = -3 A, I
B
= -12 mA
saturation Voltage (*)
C
V
25/09/2012
COMSET SEMICONDUCTORS
2|4
SEMICONDUCTORS
BD896 – BD898 – BD900 – BD902
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
BE(on)
Ratings
Base-Emitter Voltage
I
C
= -3 A, V
CE
= -3 V
(*)
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
Min
-
Typ
-
Max
-2.5
Unit
V
h
FE
DC Current Gain (*)
V
CE
= -3.0 V
I
C
= -3 A
750
-
-
-
V
ECF
C-E Diode Forward
Voltage
I
E
= -8 A
-
-
-3.5
V
SWITCHING TIMES
Symbol
t
on
t
off
Ratings
turn-on time
turn-off time
Test Condition(s)
I
C
= -3 A, V
BE(off)
= 3.5 V
I
Bon
= -I
Boff
= -12 mA, R
L
= 10
Ω
Min
-
-
Typ
1
5
Max
-
-
Unit
µs
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
R
thJ-A
Ratings
Thermal Resistance Junction To Case
Thermal Resistance Junction To Free Air
Value
1.79
62.5
Unit
°C/W
°C/W
25/09/2012
COMSET SEMICONDUCTORS
3|4
SEMICONDUCTORS
BD896 – BD898 – BD900 – BD902
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
-
0,46
2,50
4,98
2.49
0,70
Max.
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Pin 1 :
Pin 2 :
Pin 3 :
Package
Base
Collector
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
