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BDS18SMD05

Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:TT Electronics plc

厂商官网:http://www.ttelectronics.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
TT Electronics plc
包装说明
HERMETIC SEALED, CERAMIC, SMD05, 3 PIN
Reach Compliance Code
compliant
ECCN代码
EAR99
Is Samacsys
N
其他特性
HIGH RELIABILITY
外壳连接
COLLECTOR
最大集电极电流 (IC)
8 A
集电极-发射极最大电压
120 V
配置
SINGLE
最小直流电流增益 (hFE)
15
JEDEC-95代码
TO-276AA
JESD-30 代码
R-CBCC-N3
元件数量
1
端子数量
3
最高工作温度
200 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
RECTANGULAR
封装形式
CHIP CARRIER
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
PNP
认证状态
Not Qualified
表面贴装
YES
端子形式
NO LEAD
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
10 MHz
Base Number Matches
1
参数对比
与BDS18SMD05相近的元器件有:BDS18SMD05-QR-B、BDS18SMD05R4、BDS18SMD05-JQR-B。描述及对比如下:
型号 BDS18SMD05 BDS18SMD05-QR-B BDS18SMD05R4 BDS18SMD05-JQR-B
描述 Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN
是否Rohs认证 不符合 不符合 符合 不符合
包装说明 HERMETIC SEALED, CERAMIC, SMD05, 3 PIN HERMETIC SEALED, CERAMIC, SMD05, 3 PIN HERMETIC SEALED, CERAMIC, SMD05, 3 PIN HERMETIC SEALED, CERAMIC, SMD05, 3 PIN
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
外壳连接 COLLECTOR COLLECTOR COLLECTOR COLLECTOR
最大集电极电流 (IC) 8 A 8 A 8 A 8 A
集电极-发射极最大电压 120 V 120 V 120 V 120 V
配置 SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 15 15 15 15
JEDEC-95代码 TO-276AA TO-276AA TO-276AA TO-276AA
JESD-30 代码 R-CBCC-N3 R-CBCC-N3 R-CBCC-N3 R-CBCC-N3
元件数量 1 1 1 1
端子数量 3 3 3 3
最高工作温度 200 °C 200 °C 200 °C 200 °C
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 PNP PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 10 MHz 10 MHz 10 MHz 10 MHz
Base Number Matches 1 1 1 1
厂商名称 TT Electronics plc - TT Electronics plc TT Electronics plc
Is Samacsys N - N N
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