®
BDW93C
BDW94B/BDW94C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s
s
s
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW93C is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switching applications.
The complementary PNP type is BDW94C.
Also BDW94B is a PNP type.
1
2
3
TO-220
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ. = 10 KΩ
R
2
Typ. = 150
Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
NPN
PNP
V
CBO
V
CEO
I
C
I
CM
I
B
P
tot
T
stg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
c
≤
25
o
C
Storage Temperature
Max. Operating Junction Temperature
BDW94B
80
80
12
15
0.2
80
-65 to 150
150
Value
BDW93C
BDW94C
100
100
V
V
A
A
A
W
o
o
Unit
C
C
For PNP types voltage and current values are negative.
October 1999
1/6
BDW93C/BDW94B/BDW94C
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
1.56
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Test Conditions
for
BDW94B
for
BDW93C/94C
T
case
= 150
o
C
for
BDW94B
for
BDW93C/94C
for
BDW94B
for
BDW93C/94C
V
EB
= 5 V
I
C
= 100 mA
for
BDW94B
for
BDW93C/94C
I
C
= 5 A
I
C
= 10 A
I
C
= 5 A
I
C
= 10 A
I
C
= 3 A
I
C
= 5 A
I
C
= 10 A
I
F
= 5 A
I
F
= 10 A
I
C
= 1 A
f = 1 MHz
V
CE
= 10 V
20
I
B
= 20 mA
I
B
= 100 mA
I
B
= 20 mA
I
B
= 100 mA
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
1000
750
100
1.3
1.8
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 80 V
V
CB
= 100 V
V
CE
= 80 V
V
CE
= 100 V
Min.
Typ.
Max.
100
100
5
5
1
1
2
Unit
µA
µA
mA
mA
mA
mA
mA
I
CEO
I
EBO
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
∗
V
BE(sat)
∗
h
FE
∗
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
80
100
2
3
2.5
4
20K
2
4
V
V
V
V
V
V
V
F
*
h
fe
Parallel-diode Forward
Voltage
Small Signal Current
Gain
V
V
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
For PNP types voltage and current values are negative.
2/6
BDW93C/BDW94B/BDW94C
Safe Operating Area
DC Current Gain (NPN types)
Collector Emitter Saturation Voltage (NPN types)
DC Transconductance (NPN types)
Collector Emitter Saturation Voltage (NPN types)
Collector Emitter Saturation Voltage (PNP types)
3/6
BDW93C/BDW94B/BDW94C
Saturated Switching Characteristics (NPN types)
Saturated Switching Characteristics (PNP types)
Collector Emitter Saturation Voltage (PNP types)
DC Current Gain (PNP types)
DC Transconductance (PNP types)
4/6
BDW93C/BDW94B/BDW94C
TO-220 MECHANICAL DATA
DIM.
MIN.
A
C
D
D1
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
13.0
2.65
15.25
6.2
3.5
3.75
0.49
0.61
1.14
1.14
4.95
2.4
10.0
16.4
14.0
2.95
15.75
6.6
3.93
3.85
0.511
0.104
0.600
0.244
0.137
0.147
4.40
1.23
2.40
1.27
0.70
0.88
1.70
1.70
5.15
2.7
10.40
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.645
0.551
0.116
0.620
0.260
0.154
0.151
mm
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
0.050
0.027
0.034
0.067
0.067
0.203
0.106
0.409
inch
TYP.
MAX.
0.181
0.051
0.107
P011C
5/6
