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BDX67B

Transistor

器件类别:分立半导体    晶体管   

厂商名称:Inchange Semiconductor

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器件参数
参数名称
属性值
包装说明
,
Reach Compliance Code
unknown
Base Number Matches
1
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INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
DESCRIPTION
·High
DC Current Gain-
: h
FE
= 1000(Min)@ I
C
= 10A
·Low
Saturation Voltage
·Complement
to Type BDX66/A/B/C
APPLICATIONS
·Designed
for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDX67
BDX67A
V
CBO
Collector-Base Voltage
BDX67B
BDX67C
BDX67
BDX67A
V
CEO
Collector-Emitter Voltage
BDX67B
BDX67C
V
EBO
I
C
I
CM
I
B
B
BDX67/A/B/C
VALUE
80
100
UNIT
V
120
140
60
80
V
100
120
5
16
20
250
150
200
-65~200
V
A
A
mA
W
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.17
UNIT
℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDX67
BDX67A
I
C
= 100mA ; L= 25mH
BDX67B
BDX67C
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
BDX67
BDX67A
BDX67B
BDX67C
I
CEO
I
EBO
h
FE-1
h
FE-2
h
FE-3
V
ECF
C
OB
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
C-E Diode Forward Voltage
Output Capacitance
I
C
= 10A; I
B
= 40mA
I
C
= 10A; V
CE
= 3V
V
CB
= 80V; I
E
= 0
V
CB
= 80V; I
E
= 0; T
C
=150℃
V
CB
= 100V; I
E
= 0
V
CB
= 100V; I
E
= 0; T
C
=150℃
V
CB
= 120V; I
E
= 0
V
CB
= 120V; I
E
= 0; T
C
=150℃
V
CB
= 140V; I
E
= 0
V
CB
= 140V; I
E
= 0; T
C
=150℃
V
CE
= 1/2V
CEO
(Max); I
B
=0
V
EB
= 5V; I
C
=0
I
C
= 1A ; V
CE
= 3V
I
C
= 10A ; V
CE
= 3V
I
C
= 16A ; V
CE
= 3V
I
F
= 10A
I
E
= 0 ; V
CB
= 10V,f
test
= 1.0MHz
CONDITIONS
BDX67/A/B/C
MIN
60
80
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
V
100
120
2.0
2.5
1.0
5.0
1.0
5.0
1.0
5.0
1.0
5.0
1.0
5.0
5200
1000
4000
2.5
300
V
pF
mA
mA
V
V
I
CBO
Collector
Cutoff Current
mA
isc Website:www.iscsemi.cn
2
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
BDX67/A/B/C
isc Website:www.iscsemi.cn
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