型号 | BDY23 | BDY24 | BDY25 | 180T2 | 181T2 | 182T2 |
---|---|---|---|---|---|---|
描述 | LF large signal power amplification | LF large signal power amplification | LF large signal power amplification | LF large signal power amplification | LF large signal power amplification | LF large signal power amplification |
厂商名称 | New Jersey Semiconductor | New Jersey Semiconductor | New Jersey Semiconductor | New Jersey Semiconductor | New Jersey Semiconductor | New Jersey Semiconductor |
包装说明 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow |
最大集电极电流 (IC) | 6 A | 6 A | 6 A | 6 A | 6 A | 6 A |
集电极-发射极最大电压 | 60 V | 90 V | 140 V | 60 V | 90 V | 140 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
JESD-30 代码 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 2 | 2 | 2 | 2 | 2 | 2 |
最高工作温度 | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C |
封装主体材料 | METAL | METAL | METAL | METAL | METAL | METAL |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN |
端子形式 | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 10 MHz | 10 MHz | 10 MHz | 10 MHz | 10 MHz | 10 MHz |