C/
JetiEU ^Etni-tLonductoi
tj
., U
na.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
BDY74
DESCRIPTION
• Excellent Safe Operating Area
• Collector-Emitter Sustaining Voltage-
: V
CE
o(sus)= 120V(Min.)
• Collector-Emitter Saturation Voltage-
:V
CE
(sat)=1.0V(Max)@lc = 3A
APPLICATIONS
• Designed for use in industrial and commercial equipment
including high fidelity audio amplifiers,
regulators and power switches.
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Em itter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation@T
c
=25°C
Junction Temperature
Storage Temperature
VALUE
UNIT
series and shunt
PIN
t. BASE
2. BifllTTER
3. COLLECT OR (CASE)
TO-3 package
150
120
7
10
15
7
117
200
-65-200
V
V
V
A
A
A
Ic
ICP
IB
PC
Tj
Iran
W
•c
°c
-JL,
D
DIM
A
B
urn
7.80
MAX
3900
25.30
2867
090
t.40
Tstg
E
0
H
K
L
N
8.30
1.10
1.60
10,32
546
1140
1675
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
iros
1962
420
1350
1S.40
,
4.00
PARAMETER
Thermal Resistance.Junction to Case
MAX
1.5
UNIT
g
u
V
30
00
4.30
3020
450
"C/W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BDY74
MAX
UNIT
VcEO(SUS)
Collector-Emitter Sustaining Voltage
lc=200mA;l
B
=0;L=25mH
120
V
VcEX(SUS)
Collector-Emitter Sustaining Voltage
lc= 100mA; V
BE
= -1.5V
150
V
VcE(sat)
Collector-Emitter Saturation Voltage
lc= 3A; I
B
= 0.3A
1.0
V
VeE(on)
Base-Emitter On Voltage
lc= 3A; VCE= 4V
1.7
V
ICBO
Collector Cutoff Current
V
CB
=130V;I
E
=0
V
CE
=1 30V; V
BE(
om= 1-5V
V
CE
= 130V; V
B
E(ofl)= 1-5V T
c
= 150'C
VEB= TV; l
c
= 0
1.0
1.0
10
5.0
mA
ICEX
Collector Cutoff Current
rriA
IEBO
Emitter Cutoff Current
mA
MFE
DC Current Gain
lc= 3A; V
CE
= 4V
50
150
fr
Current Gain-Bandwidth Product
lc=1A;V
G
E=10V
0.8
MHz
