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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D087
BF720; BF722
NPN high-voltage transistors
Product data sheet
Supersedes data of 1996 Dec 05
1999 Apr 21
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
FEATURES
•
Low feedback capacitance.
APPLICATIONS
•
Class-B video output stages of colour television
receivers
•
General purpose high voltage circuits.
handbook, halfpage
BF720; BF722
4
2, 4
1
3
DESCRIPTION
NPN transistors in a SOT223 plastic package.
PNP complement: BF723.
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
Fig.1
1
Top view
2
3
MAM287
Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BF720
BF722
V
CEO
collector-emitter voltage
BF720
BF722
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector
1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
300
250
5
100
200
100
1.2
+150
150
+150
V
V
V
mA
mA
mA
W
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
300
250
V
V
MIN.
MAX.
UNIT
1999 Apr 21
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
note 1
BF720; BF722
VALUE
106
25
UNIT
K/W
K/W
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
feedback capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CB
= 200 V
I
E
= 0; V
CB
= 200 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 25 mA; V
CE
= 20 V
I
C
= i
c
= 0; V
CE
= 30 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
−
−
−
50
−
−
60
MIN.
MAX.
10
10
50
−
0.6
1.6
−
V
pF
MHz
UNIT
nA
µA
nA
collector-emitter saturation voltage I
C
= 30 mA; I
B
= 5 mA
1999 Apr 21
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
BF720; BF722
SOT223
D
B
E
A
X
c
y
H
E
b
1
v
M
A
4
Q
A
A
1
1
e
1
e
2
b
p
3
w
M
B
detail X
L
p
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.8
1.5
A
1
0.10
0.01
b
p
0.80
0.60
b
1
3.1
2.9
c
0.32
0.22
D
6.7
6.3
E
3.7
3.3
e
4.6
e
1
2.3
H
E
7.3
6.7
L
p
1.1
0.7
Q
0.95
0.85
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
SC-73
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
1999 Apr 21
4
