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BF721

0.1mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR

器件类别:晶体管   

厂商名称:ST(意法半导体)

厂商官网:http://www.st.com/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
ST(意法半导体)
Reach Compliance Code
compliant
ECCN代码
EAR99
Is Samacsys
N
外壳连接
COLLECTOR
最大集电极电流 (IC)
0.0001 A
集电极-发射极最大电压
300 V
配置
SINGLE
最小直流电流增益 (hFE)
50
JESD-30 代码
R-PDSO-G4
JESD-609代码
e3
元件数量
1
端子数量
4
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
PNP
最大功率耗散 (Abs)
1.4 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
60 MHz
Base Number Matches
1
文档预览
®
BF721
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
Type
BF721
s
Marking
721
s
s
s
SILICON EPITAXIAL PLANAR PNP HIGH
VOLTAGE TRANSISTOR
SOT-223 PLASTIC PACKAGE FOR
SURFACE MOUNTING CIRCUITS
TAPE AND REEL PACKING
THE NPN COMPLEMENTARY TYPE IS
BF720
2
1
SOT-223
2
3
APPLICATIONS
s
VIDEO AMPLIFIER CIRCUITS (RGB
CATHODE CURRENT CONTROL)
s
TELEPHONE WIRELINE INTERFACE (HOOK
SWITCHES, DIALER CIRCUITS)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
Parameter
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Total Dissipation at T
C
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
Value
-300
-300
-5
-100
-200
1.4
-65 to 150
150
Unit
V
V
V
mA
mA
W
o
o
C
C
May 2002
1/4
BF721
THERMAL DATA
R
thj-amb
Thermal Resistance Junction-Ambient
2
Max
89.3
o
C/W
Device mounted on a PCB area of 1 cm
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CB
= -200 V
V
CB
= -200 V
V
CB
= -300 V
V
EB
= -5 V
I
C
= -10 mA
-300
T
C
= 150 C
o
Min.
Typ.
Max.
-10
-10
-100
-50
Unit
nA
µA
µA
nA
V
I
EBO
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
Transition Frequency
Collector-Base
Capacitance
I
E
= -100
µA
-5
V
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
CBO
C
EBO
I
C
= -30 mA
I
C
= -30 mA
I
C
= -25 mA
I
B
= -5 mA
I
B
= -5 mA
V
CE
= -20 V
50
60
6
22
-0.6
-1.2
V
V
I
C
= -15 mA V
CE
= -10V f =100 MHz
I
E
= 0
V
CB
= -10 V f = 1MHz
V
EB
= -2 V
f = 1MHz
MHz
pF
pF
Emitter-Base
I
C
= 0
Capacitance
Pulsed: Pulse duration = 300
µs,
duty cycle
2 %
2/4
BF721
SOT-223 MECHANICAL DATA
mm
MIN.
A
B
B1
c
D
e
e1
E
H
V
A1
0.02
3.30
6.70
0.60
2.90
0.24
6.30
0.70
3.00
0.26
6.50
2.30
4.60
3.50
7.00
3.70
7.30
10
o
0.130
0.264
TYP.
MAX.
1.80
0.80
3.10
0.32
6.70
0.024
0.114
0.009
0.248
0.027
0.118
0.010
0.256
0.090
0.181
0.138
0.276
0.146
0.287
10
o
MIN.
inch
TYP.
MAX.
0.071
0.031
0.122
0.013
0.264
DIM.
P008B
3/4
BF721
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
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