BF752
NPN Silicon RF Transistor
•
Low noise amplifier for low voltage applications
•
G
ms
= 23 dB at 1.8 GHz
•
Minimum noise figure
NF
min
= 1 dB at 1.8 GHz
•
Pb-free (RoHS compliant) package
3
4
1
2
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BF752
Parameter
Marking
AXs
1=B
Pin Configuration
2=E
3=C
4=E
Symbol
V
CEO
2.5
2.4
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
10
10
1
40
4
100
150
Package
-
SOT343
Value
Unit
V
-
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Collector-emitter voltage
T
A
= 25 °C
T
A
=
−
55 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
105 °C
Junction temperature
Storage temperature
°C
-55 ... 150
mA
mW
Thermal Resistance
Parameter
Junction - soldering point
2)
1
T
2
For
Symbol
R
thJS
Value
≤
450
Unit
K/W
S
is measured on the emitter lead at the soldering point to pcb
calculation of
R
thJA
please refer to Application Note AN077 Thermal Resistance
2010-08-25
BF752
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 10 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain
I
C
= 20 mA,
V
CE
= 2 V, pulse measured
h
FE
70
110
170
-
I
EBO
-
-
35
µA
I
CBO
-
-
200
nA
I
CES
-
-
10
µA
V
(BR)CEO
2.5
3
3.5
V
Symbol
min.
Values
typ.
max.
Unit
2010-08-25
BF752
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 30 mA,
V
CE
= 2 V,
f
= 2 GHz
Collector-base capacitance
V
CB
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Minimum noise figure
I
C
= 2 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
f
= 1.8 GHz
Power gain, maximum stable
1)
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Insertion power gain
V
CE
= 2 V,
I
C
= 20 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
Ω
Third order intercept point at output
V
CE
= 2 V,
I
C
= 20 mA,
f
= 1.8 GHz
1dB compression point at output
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
1
G
32
-
45
0.07
-
0.13
GHz
pF
C
cb
C
ce
-
0.3
-
C
eb
-
0.31
-
NF
min
-
1
-
dB
G
ms
-
23
-
dB
|S
21
|
2
-
21
-
IP
3
P
-1dB
-
-
23.5
11
-
-
dBm
ms
= |S
21
/ S
12
|
2010-08-25
Package SOT343
BF752
Package Outline
2
±0.2
1.3
4
3
0.15
1
0.3
+0.1
-0.05
4x
0.1
M
0.9
±0.1
0.1 MAX.
0.1
A
1.25
±0.1
2.1
±0.1
2
0.6
+0.1
-0.05
0.1 MIN.
0.15
-0.05
0.2
M
+0.1
A
Foot Print
0.6
0.8
1.15
0.9
Marking Layout (Example)
Manufacturer
1.6
2005, June
Date code (YM)
Pin 1
BGA420
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
Pin 1
2.15
2.3
8
1.1
2010-08-25
BF752
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2010-08-25
