BF991
N-channel dual-gate MOS-FET
Rev. 03 — 20 November 2007
Product data sheet
IMPORTANT NOTICE
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NXP Semiconductors
NXP
Semiconductors
Product specification
N-channel dual-gate MOS-FET
FEATURES
•
Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source.
APPLICATIONS
•
VHF applications such as:
– VHF television tuners and FM tuners
– Professional communication equipment.
PINNING
PIN
1
2
3
4
SYMBOL
s, b
d
g
2
g
1
source
drain
gate 2
gate 1
Top view
Marking code:
%MA.
MAM039
handbook, halfpage
BF991
DESCRIPTION
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
4
3
g
2
g1
d
DESCRIPTION
1
2
s,b
Fig.1 Simplified outline (SOT143) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
Y
fs
C
ig1-s
C
rs
F
PARAMETER
drain-source voltage
drain current
total power dissipation
junction temperature
transfer admittance
feedback capacitance
noise figure
f = 1 kHz; I
D
= 10 mA; V
DS
= 10 V; V
G2-S
= 4 V
up to T
amb
= 60
°C
CONDITIONS
−
−
−
−
14
TYP.
MAX.
20
20
200
150
−
−
−
2
UNIT
V
mA
mW
°C
mS
pF
fF
dB
input capacitance at gate 1 f = 1 MHz; I
D
= 10 mA; V
DS
= 10 V; V
G2-S
= 4 V 2.1
f = 1 MHz; I
D
= 10 mA; V
DS
= 10 V; V
G2-S
= 4 V 20
f = 200 MHz; G
S
= 2 mS; B
S
= B
Sopt
;
I
D
= 10 mA; V
DS
= 10 V; V
G2-S
= 4 V
1
Rev. 03 - 20 November 2007
2 of 7
NXP
Semiconductors
Product specification
N-channel dual-gate MOS-FET
LIMITING VALUES
In according with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
I
D
I
D(AV)
I
G1-S
I
G2-S
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
drain current (DC)
average drain current
gate 1-source current
gate 2-source current
total power dissipation
storage temperature
junction temperature
up to T
amb
= 60
°C;
note 1
CONDITIONS
−
−
−
−
−
−
−65
−
MIN.
MAX.
20
20
20
±10
±10
200
+150
150
BF991
UNIT
V
mA
mA
mA
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air; note 1
VALUE
460
UNIT
K/W
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8
×
10
×
0.7 mm.
handbook, halfpage
200
MGE792
Ptot
(mW)
100
0
0
100
Tamb (°C)
200
Fig.2 Power derating curve.
Rev. 03 - 20 November 2007
3 of 7
NXP
Semiconductors
Product specification
N-channel dual-gate MOS-FET
STATIC CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
G1-SS
I
G2-SS
I
DSS
V
(BR)G1-SS
V
(BR)G2-SS
V
(P)G1-S
V
(P)G2-S
PARAMETER
gate 1 cut-off current
gate 2 cut-off current
drain current
CONDITIONS
V
G1-S
= 5 V; V
G2-S
= V
DS
= 0
V
G2-S
= 5 V; V
G1-S
= V
DS
= 0
V
DS
= 10 V; V
G1-S
= 0; V
G2-S
= 4 V
MIN.
−
−
4
6
6
−
−
BF991
MAX.
50
50
25
20
20
−2.5
−2.5
UNIT
nA
nA
mA
V
V
V
V
gate 1-source breakdown voltage I
G1-SS
= 10 mA; V
G2-S
= V
DS
= 0
gate 2-source breakdown voltage I
G2-SS
= 10 mA; V
G1-S
= V
DS
= 0
gate 1-source cut-off voltage
gate 2-source cut-off voltage
I
D
= 20
µA;
V
DS
= 10 V; V
G2-S
= 4 V
I
D
= 20
µA;
V
DS
= 10 V; V
G1-S
= 0
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): I
D
= 10 mA; V
DS
= 10 V; V
G2-S
= 4 V; T
amb
= 25
°C.
SYMBOL
Y
fs
C
ig1-s
C
ig2-s
C
rs
C
os
F
G
tr
PARAMETER
transfer admittance
input capacitance at gate 1
input capacitance at gate 2
feedback capacitance
output capacitance
noise figure
transducer gain; note 1
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 100 MHz; G
S
= 1 mS; B
S
= B
Sopt
f = 200 MHz; G
S
= 2 mS; B
S
= B
Sopt
f = 100 MHz; G
S
= 1 mS; B
S
= B
Sopt
;
G
L
= 0.5 mS; B
L
= B
Lopt
f = 200 MHz; G
S
= 2 mS; B
S
= B
Sopt
;
G
L
= 0.5 mS; B
L
= B
Lopt
Note
1. Crystal mounted in a SOT103 package.
CONDITIONS
MIN.
10
−
−
−
−
−
−
−
−
TYP.
14
2.1
1
20
1.1
0.7
1
29
26
MAX.
−
−
−
−
−
1.7
2
−
−
UNIT
mS
pF
pF
fF
pF
dB
dB
dB
dB
Rev. 03 - 20 November 2007
4 of 7
NXP
Semiconductors
Product specification
N-channel dual-gate MOS-FET
PACKAGE OUTLINE
BF991
handbook, full pagewidth
0.75
0.60
0.150
0.090
4
0.1
max
10
max
o
3.0
2.8
1.9
3
B
A
0.2 M A B
10
max
o
1.4
1.2
2.5
max
1
1.1
max
o
2
0.1 M A B
30
max
0.88
0
0.1
1.7
0.48
0
0.1
MBC845
TOP VIEW
Dimensions in mm.
See also
Soldering recommendations.
Fig.3 SOT143.
Rev. 03 - 20 November 2007
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