BFG540; BFG540/X; BFG540/XR
NPN 9 GHz wideband transistor
Rev. 05 — 21 November 2007
Product data sheet
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NXP Semiconductors
NXP
Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
•
High power gain
•
Low noise figure
•
High transition frequency
•
Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial
transistors, intended for wideband
applications in the GHz range, such
as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, satellite TV tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optical systems.
The transistors are mounted in plastic
SOT143B and SOT143R packages.
PINNING
PIN
1
2
3
4
1
2
3
4
1
2
3
4
DESCRIPTION
collector
base
emitter
emitter
BFG540; BFG540/X;
BFG540/XR
handbook, 2 columns
4
3
BFG540 (Fig.1) Code:
%MG
1
Top view
2
MSB014
BFG540/X (Fig.1) Code:
%MM
collector
emitter
base
emitter
collector
emitter
base
emitter
Fig.1 SOT143B.
handbook, 2 columns
3
4
BFG540/XR (Fig.2) Code:
%MR
2
Top view
1
MSB035
Fig.2 SOT143R.
Rev. 05 - 21 November 2007
2 of 14
NXP
Semiconductors
Product specification
NPN 9 GHz wideband transistor
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
T
s
≤
60
°C;
note 1
I
C
= 40 mA; V
CE
= 8 V; T
j
= 25
°C
I
C
= 0; V
CE
= 8 V; f = 1 MHz
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
°C
I
C
= 40 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
°C
s
21
F
2
BFG540; BFG540/X;
BFG540/XR
CONDITIONS
open emitter
R
BE
= 0
MIN.
−
−
−
−
100
−
−
−
−
15
−
−
−
TYP.
−
−
−
−
120
0.5
9
18
11
16
1.3
1.9
2.1
MAX.
20
15
120
400
250
−
−
−
−
−
1.8
2.4
−
UNIT
V
V
mA
mW
pF
GHz
dB
dB
dB
dB
dB
dB
insertion power gain
noise figure
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 40 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 2 GHz; T
amb
= 25
°C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
T
s
≤
60
°C;
note 1
VALUE
290
UNIT
K/W
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
T
s
≤
60
°C;
note 1
open emitter
R
BE
= 0
open collector
CONDITIONS
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
2.5
120
400
+150
150
UNIT
V
V
V
mA
mW
°C
°C
Rev. 05 - 21 November 2007
3 of 14
NXP
Semiconductors
Product specification
NPN 9 GHz wideband transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
CONDITIONS
I
E
= 0; V
CB
= 8 V
I
C
= 40 mA; V
CE
= 8 V
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
°C
I
C
= 40 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
°C
s
21
F
2
BFG540; BFG540/X;
BFG540/XR
MIN.
−
60
−
−
−
−
−
−
15
−
−
−
−
−
−
−
TYP.
−
120
2
0.9
0.5
9
18
11
16
1.3
1.9
2.1
21
34
500
−50
MAX.
50
250
−
−
−
−
−
−
−
1.8
2.4
−
−
−
−
−
UNIT
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
mV
dB
insertion power gain
noise figure
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 40 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 2 GHz; T
amb
= 25
°C
P
L1
ITO
V
O
d
2
Notes
output power at 1 dB gain
compression
third order intercept point
output voltage
second order intermodulation
distortion
I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
Ω;
f = 900 MHz; T
amb
= 25
°C
note 2
note 3
note 4
s
21 2
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero and G
UM
=
10 log -------------------------------------------------------- dB.
(
1
–
s
11 2
) (
1
–
s
22 2
)
2. V
CE
= 8 V; I
C
= 40 mA; R
L
= 50
Ω;
T
amb
= 25
°C;
f
p
= 900 MHz; f
q
= 902 MHz;
measured at f
(2p
−
q)
= 898 MHz and f
(2q
−
p)
= 904 MHz.
3. d
im
=
−60
dB (DIN 45004B); I
C
= 40 mA; V
CE
= 8 V; Z
L
= Z
S
= 75
Ω;
T
amb
= 25
°C;
V
p
= V
O
; V
q
= V
O
−6
dB; V
r
= V
O
−6
dB;
f
p
= 795.25 MHz; f
q
= 803.25 MHz; f
r
= 805.25 MHz;
measured at f
(p + q
−
r)
= 793.25 MHz.
4. I
C
= 40 mA; V
CE
= 8 V; V
O
= 275 mV; T
amb
= 25
°C;
f
p
= 250 MHz; f
q
= 560 MHz; measured at f
(p + q)
= 810 MHz.
Rev. 05 - 21 November 2007
4 of 14
NXP
Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG540; BFG540/X;
BFG540/XR
handbook, halfpage
600
MBG249
handbook, halfpage
250
MRA749
P
tot
(mW)
400
hFE
200
150
100
200
50
0
0
50
100
150
Ts
(
o
C)
200
0
10
−2
10
−1
1
10
IC (mA)
10
2
V
CE
= 8 V; T
j
= 25
°C.
V
CE
≤
10 V.
Fig.4
Fig.3 Power derating curve.
DC current gain as a function of collector
current.
handbook, halfpage
1
MRA750
Cre
handbook, halfpage
12
MRA751
(pF)
0.8
fT
(GHz)
8
VCE = 8 V
0.6
VCE = 4 V
0.4
4
0.2
0
0
4
8
VCB (V)
12
0
10
−1
1
10
IC (mA)
10
2
I
C
= 0; f = 1 MHz.
f = 1 GHz; T
amb
= 25
°C.
Fig.5
Feedback capacitance as a function of
collector-base voltage.
Fig.6
Transition frequency as a function of
collector current.
Rev. 05 - 21 November 2007
5 of 14
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